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Future Compound Semiconductor Manufacturing Hub

未来化合物半导体制造中心

基本信息

批准号：
EP/P006973/1
负责人：
Peter Smowton
金额：
$ 1382.85万
依托单位：
CARDIFF UNIVERSITY
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2016
资助国家：
英国
起止时间：
2016 至无数据
项目状态：
未结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FP006973%2F1
关键词：
Future Compound Semiconductor Manufacturing Hub

项目摘要

We will establish the primary global manufacturing research hub for Compound Semiconductors that brings together Academic and Industrial researchers. This will capitalize on existing academic expertise in Cardiff, Manchester, Sheffield and UCL and the UK indigenous corporate strength in the key advanced materials technology of Compound Semiconductors. Cardiff, the Compound Semiconductor Centre and the other spoke universities will provide > £100M of additive capital leverage to the Hub, providing European leading facilities for large scale compound semiconductor epitaxial growth, device fabrication and characterisation enabling the most effective translation of research to manufacturing.The hub will operate at the necessary scale and with the necessary reach to change the approach of the UK compound semiconductor research community to one focused on starting from research solutions that can be manufactured. It will do this by providing the necessary tools and expertise and will become the missing exploitation link for the UK compound semiconductor research community. It will be a magnet and the driver for high technology industry and will act as the focal point for Europe's 5th Semiconductor Cluster and the 1st dedicated to compound semiconductors. Partners will include local and UK companies and global organisations.The importance of compound semiconductor technology cannot be overstated. It has underpinned the internet and enabled megatrends such as Smart Phones and Tablets, satellite communications / GPS, Direct Broadcast TV, energy efficient LED lighting, efficient solar power generation, high capacity communication networks, data storage, ground breaking healthcare and biotechnology.Silicon has supported the information society in the 20th century and dominates memory and processor function, but is reaching fundamental limits. Whilst the combination of Silicon and compound semiconductors will produce a second revolution in the information age, they are very different materials with, for example, different fundamental lattice constants and different thermal properties and have different device fabrication requirements. We propose research into large scale Compound Semiconductor manufacturing and in manufacturing integrated Compound Semiconductors on Silicon. The scale of the hub means we can bring together three world leading researchers in the growth of compound semiconductors on Silicon. Each has individually invented different solutions to tackle the silicon / compound semiconductor interface - together they will invent the universal solution. We will solve the scientific challenges in wafer size scale-up, process statistical control and integrated epitaxial growth and processing to facilitate new devices and integrated systems and open up completely new areas of research, only possible with reliable and reproducible fabrication, such as electronically controlled Qubits. We will facilitate the improved communication infrastructure necessary for the connected world and the integrated systems of the Internet of Things. We will produce large area integrated sensor arrays for, e.g. in-process Non-Destructive Testing, further benefiting manufacturing but also improving our safety and security. The key outcomes will be to 1) To radically boost the uptake and application of Compound Semiconductor technology by applying the manufacturing approaches of Silicon to Compound Semiconductors, 2) To exploit the highly advantageous electronic, magnetic, optical and power handling properties of Compound Semiconductors while utilising the cost and scaling advantage of silicon technology where best suited and 3) To generate novel integrated functionality such as sensing, data processing and communication.

我们将建立全球主要的化合物半导体制造研究中心，汇集学术和工业研究人员。这将充分利用卡迪夫、曼彻斯特、谢菲尔德和伦敦大学学院现有的学术专长，以及英国本土企业在化合物半导体关键先进材料技术方面的实力。卡迪夫、化合物半导体中心和其他spoke大学将为该中心提供100亿英镑的增材资本杠杆，为大规模化合物半导体外延生长、器件制造和表征提供欧洲领先的设施，使研究最有效地转化为制造。该中心将以必要的规模运作，并具有必要的影响力，以改变英国化合物半导体研究界的方法，使其专注于从可制造的研究解决方案开始。它将通过提供必要的工具和专业知识来实现这一目标，并将成为英国化合物半导体研究界缺失的开发环节。它将成为高科技产业的磁石和驱动力，并将成为欧洲第五个半导体集群和第一个专门用于化合物半导体的集群的焦点。合作伙伴将包括本地和英国公司以及全球组织。化合物半导体技术的重要性怎么强调也不过分。它支撑了互联网，并推动了智能手机和平板电脑、卫星通信/ GPS、电视直播、节能LED照明、高效太阳能发电、高容量通信网络、数据存储、突破性医疗保健和生物技术等大趋势。硅支撑了20世纪的信息社会，并主导了存储器和处理器功能，但正在达到基本极限。虽然硅和化合物半导体的结合将在信息时代产生第二次革命，但它们是非常不同的材料，例如，它们具有不同的基本晶格常数和不同的热性能，并且具有不同的器件制造要求。我们建议研究大规模的化合物半导体制造和在硅上制造集成化合物半导体。该中心的规模意味着我们可以将三位世界领先的硅基化合物半导体研究人员聚集在一起。每个人都单独发明了不同的解决方案来解决硅/化合物半导体接口-他们将共同发明通用的解决方案。我们将解决晶圆尺寸放大、工艺统计控制和集成外延生长和加工方面的科学挑战，以促进新设备和集成系统的发展，并开辟全新的研究领域，只有可靠和可重复的制造，如电子控制量子比特，才有可能。我们将推动完善互联世界和物联网集成系统所需的通信基础设施。我们将生产大面积集成传感器阵列，例如在过程中无损检测，进一步有利于制造业，同时也提高了我们的安全性。关键成果将是：1)通过将硅的制造方法应用于化合物半导体，从根本上促进化合物半导体技术的吸收和应用；2)在最适合的地方利用硅技术的成本和缩放优势，开发化合物半导体的高度优势的电子、磁性、光学和功率处理特性；3)产生新的集成功能，如传感，数据处理和通信。

项目成果

期刊论文数量（10）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Plasmonic Integrated Multimode Filter

DOI：
10.1109/icton.2019.8840183
发表时间：
2019-07
期刊：
2019 21st International Conference on Transparent Optical Networks (ICTON)
影响因子：
0
作者：
Nicolás Abadía;Alireza Samani;E. D. Boulbar;D. Hayes;P. Smowton
通讯作者：
Nicolás Abadía;Alireza Samani;E. D. Boulbar;D. Hayes;P. Smowton

CMOS compatible multi-band plasmonic TE-pass polarizer

CMOS 兼容多波段等离子体 TE 通偏振器

DOI：
10.48550/arxiv.2204.13030
发表时间：
2022
期刊：
影响因子：
0
作者：
Abadía N
通讯作者：
Abadía N

Radiation tolerance of GaAs1-xSbx solar cells

DOI：
10.1016/j.solmat.2021.111352
发表时间：
2021-12
期刊：
Solar Energy Materials and Solar Cells
影响因子：
6.9
作者：
H. Afshari;B. Durant;Tristan Thrasher;Logan Abshire;V. R. Whiteside;Shun Chan;Dongyoung Kim;S. Hatch;M. Tang;J. Mcnatt;Huiyun Liu;M. McCartney;David J. Smith;I. Sellers
通讯作者：
H. Afshari;B. Durant;Tristan Thrasher;Logan Abshire;V. R. Whiteside;Shun Chan;Dongyoung Kim;S. Hatch;M. Tang;J. Mcnatt;Huiyun Liu;M. McCartney;David J. Smith;I. Sellers

Design and characterisation of multi-mode interference reflector lasers for integrated photonics

用于集成光子学的多模干涉反射激光器的设计和表征