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Reliably unreliable nanotechnologies

Reliably unreliable nanotechnologies
可靠但不可靠的纳米技术
批准号:
EP/K017829/1
负责人:
Themis Prodromakis
金额:
$141.3万
依托单位:
依托单位国家:
英国
项目类别:
Fellowship
财政年份:
2013
资助国家:
英国
项目状态:
已结题
起止时间:
2013 至 --

项目摘要

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中文摘要
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英文摘要
Nanoscale resistive switching (RS) elements, also known as memristors, are nowadays regarded as a promising solution for establishing next-generation memory, due to their infinitesimal dimensions, their capacity to store multiple bits of information per element and the miniscule energy required to write distinct states. Currently, the microelectronics community aspires exploiting these attributes in a deterministic fashion where information encoding and processing is realised via static representations. In consequence, research efforts are focused on optimising memristor technology in a "More Moore" approach to comply with existing CMOS devices attributes, i.e. high-yield, supreme reproducibility, very long retention characteristics and conventional circuit design formalisms. The functional properties of such elements are however associated with irreversible rate-limiting electro/thermo-dynamic changes that often bring them in "far from equilibrium" conditions, manifesting opportunities for unconventional computing within a probabilistic framework.This fellowship aims exploiting the strong emergence of ultra-thin functional oxides, nanoscale resistive switching elements and large-scale systems of the same. We will first investigate the effect of quantum phase transitions and the mechanisms leading into thermodynamically stable/unstable long-range order/disorder of distinct materials. These mechanisms will then be exploited in nanoscale solid-state devices for establishing the state-of-the-art in non-volatile multi-state memory but also volatile elements that could potentially be employed as dynamic computational elements. The rich-dynamics of the later will be compared against reaction-diffusion mechanisms of naturally occurring nano-systems to facilitate novel design paradigms and emerging ICT applications for substantiating unconventional computation formalisms. A successful outcome will demonstrate a mature memristive device manufacturing technology that will be supported by the necessary design tools, for taking CMOS technology far beyond its current state-of-art.
期刊论文(10)
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会议论文
Emulating short-term synaptic dynamics with memristive devices
使用忆阻设备模拟短期突触动力学
DOI: 10.5167/uzh-132668
发表时间: 2016
期刊:
影响因子: --
作者: [Berdan, Radu]
通讯作者: Berdan, Radu
DOI: 10.1038/srep18639
发表时间: 2016-01-04
期刊: Scientific reports
影响因子: 4.6
作者: [Berdan R, Vasilaki E, Khiat A, Indiveri G, Serb A, Prodromakis T]
通讯作者: Prodromakis T
Towards Large Scale Selector-less Multi-State ReRAM Characterisation
迈向大规模无选择器多状态 ReRAM 表征
DOI: --
发表时间: 2015
期刊:
影响因子: --
作者: [Berdan R]
通讯作者: Berdan R
Live demonstration: MNET: A visually rich memristor crossbar simulator
现场演示:MNET:视觉效果丰富的忆阻器纵横模拟器
DOI: 10.1109/iscas.2017.8050399
发表时间: 2017
期刊:
影响因子: --
作者: [Berdan R]
通讯作者: Berdan R
6
    AI for Productive Research & Innovation in eLectronics (APRIL) Hub
    • 批准号:
      EP/Y029763/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $1309.15万
    • 财政年份:
      2024
    • 负责人:
      Themis Prodromakis
    • 依托单位:
    Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant
    • 批准号:
      EP/R024642/2
    • 项目类别:
      Research Grant
    • 资助金额:
      $300.04万
    • 财政年份:
      2022
    • 负责人:
      Themis Prodromakis
    • 依托单位:
    Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant
    • 批准号:
      EP/R024642/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $802.23万
    • 财政年份:
      2018
    • 负责人:
      Themis Prodromakis
    • 依托单位:
    An electronic-based ELISA combined with microfluidics
    • 批准号:
      EP/L020920/1
    • 项目类别:
      Research Grant
    • 资助金额:
      $110.8万
    • 财政年份:
      2014
    • 负责人:
      Themis Prodromakis
    • 依托单位:
    海外基金