Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant
功能性氧化物可重构技术 (FORTE):一项计划资助
基本信息
- 批准号:EP/R024642/2
- 负责人:
- 金额:$ 300.04万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2022
- 资助国家:英国
- 起止时间:2022 至 无数据
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
Our vision is to rejuvenate modern electronics by developing and enabling a new approach to electronic systems where reconfigurability, scalability, operational flexibility/resilience, power efficiency and cost-effectiveness are combined. This vision will be delivered by breaking out of the large, but comprehensively explored realm of CMOS technology upon which virtually all modern electronics are based; consumer and non-consumer alike.Introducing novel nanoelectronic components never before used in the technology we all carry around in our phones will introduce new capabilities that have thus far been unattainable due to the limitations of current hardware technology. The resulting improved capability of engineers to squeeze more computational power in ever smaller areas at ever lower power costs will unlock possibilities such as: a) truly pervasive Internet-of-Things computing where minute sensors consuming nearly zero power monitor the world around us and inform our choices, b) truly smart implants that within extremely limited power and size budgets can not only interface with the brain, but also process that data in a meaningful way and send the results either onwards to e.g. a doctor, or even feed it back into the brain for further processing, c) radiation-resistant electronics to be deployed in satellites and aeroplanes, civilian and military and improve communication reliability while driving down maintenance costs.In building this vision, our project will deliver a series of scientific and commercial objectives: i) Developing the foundations of nanoelectronic component (memristive) technologies to the point where it becomes a commercially available option for the general industrial designer. ii) Setting up a fully supported (models, tools, design rules etc.), end-to-end design infrastructure so that anyone with access to industry standard software used for electronics design today may utilise memristive technology in their design. iii) Introduce a new design paradigm where memristive technologies are intimately integrated with traditional analogue and digital circuitry in order to deliver performance unattainable by any in isolation. This includes designing primitive hardware modules that can act as building-blocks for higher level designs, allowing engineers to construct large-scale systems without worrying about the intricate details of memristor operation. iv) Actively foster a community of users, encouraged to explore potential commercial impact and further scientific development stemming from our work whilst feeding back into the project through e.g. collaborations. v) Start early by beginning to commercialise the most mature aspects of the proposed research as soon as possible in order to create jobs in the UK. Vast translational opportunities exist via: a) The direct commercialisation of project outcomes, specifically developed applications (prove in lab, then obtain venture capital funding and commercialise), b) The generation of novel electronic designs (IP / design bureau model; making the UK a global design centre for memristive technology-based electronics) and c) Selling tools developed to help accelerate the project (instrumentation, CAD and supporting software). Our team (academic and industry) is ideally placed for delivering this disruptive vision that will allow our society to efficiently expand the operational envelope of electronics, enabling its use in formidable environments as well as reuse or re-purpose electronics affordably.
我们的愿景是通过开发和启用电子系统的新方法来振兴现代电子产品,其中可重构性,可扩展性,操作灵活性/弹性,功率效率和成本效益相结合。这一愿景将通过突破几乎所有现代电子产品都基于的大型但全面探索的CMOS技术领域来实现;消费者和非消费者都一样。引入新的纳米电子元件之前从未在我们随身携带的手机技术中使用过,将引入由于当前硬件技术的限制到目前为止无法实现的新功能。由此产生的工程师以更低的功耗在更小的区域内压缩更多计算能力的能力将带来以下可能性:a)真正无处不在的物联网计算,微小的传感器消耗几乎为零的功率监测我们周围的世界,并告知我们的选择;b)真正的智能植入物,在极其有限的功率和尺寸预算下,不仅可以与大脑接口,还可以以有意义的方式处理这些数据,并将结果发送给医生,甚至将其反馈到大脑进行进一步处理。C)在民用和军用卫星和飞机上部署抗辐射电子设备,提高通信可靠性,同时降低维护成本。为了实现这一愿景,我们的项目将实现一系列科学和商业目标:1)发展纳米电子元件(忆阻)技术的基础,使其成为一般工业设计师的商业选择。ii)建立一个完全支持的(模型、工具、设计规则等)端到端设计基础设施,以便任何能够访问当今用于电子设计的行业标准软件的人都可以在他们的设计中使用记忆技术。iii)引入一种新的设计范例,将忆阻技术与传统的模拟和数字电路紧密结合,以提供任何单独的电路都无法实现的性能。这包括设计基本的硬件模块,这些模块可以作为高级设计的构建模块,使工程师能够构建大型系统,而不必担心忆阻器操作的复杂细节。iv)积极培育一个用户社区,鼓励他们探索我们工作的潜在商业影响和进一步的科学发展,同时通过合作等方式反馈给项目。v)尽早开始将所提议的研究中最成熟的方面商业化,以便在英国创造就业机会。巨大的转化机会存在于:a)项目成果的直接商业化,特别是开发的应用程序(在实验室验证,然后获得风险资本资金和商业化),b)产生新颖的电子设计(IP /设计局模式;使英国成为基于记忆技术的电子产品的全球设计中心)和c)销售开发的工具,以帮助加速项目(仪器仪表,CAD和支持软件)。我们的团队(学术界和工业界)是实现这一颠覆性愿景的理想场所,这将使我们的社会能够有效地扩展电子产品的操作范围,使其能够在恶劣的环境中使用,以及经济实惠地重复使用或重新利用电子产品。
项目成果
期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Thermal Effects on Initial Volatile Response and Relaxation Dynamics of Resistive RAM Devices
热效应对阻性 RAM 器件初始易失性响应和弛豫动态的影响
- DOI:10.1109/led.2022.3145620
- 发表时间:2022
- 期刊:
- 影响因子:4.9
- 作者:Abbey T
- 通讯作者:Abbey T
Analogue Circuits Real-Time Emulation based on Wave Digital Filter
- DOI:10.1109/iscas48785.2022.9937868
- 发表时间:2022-05
- 期刊:
- 影响因子:0
- 作者:Abdulaziz Alshaya;Saleh Komies;L. Xie;Jiawei Shen;C. Papavassiliou
- 通讯作者:Abdulaziz Alshaya;Saleh Komies;L. Xie;Jiawei Shen;C. Papavassiliou
Precise Characterizing of FPGAs in Production Systems
生产系统中 FPGA 的精确表征
- DOI:
- 发表时间:2022
- 期刊:
- 影响因子:0
- 作者:Babaei B
- 通讯作者:Babaei B
Digital in-memory stochastic computing architecture for vector-matrix multiplication
用于向量矩阵乘法的数字内存随机计算架构
- DOI:10.3389/fnano.2023.1147396
- 发表时间:2023
- 期刊:
- 影响因子:0
- 作者:Agwa S
- 通讯作者:Agwa S
An Open-Source RRAM Compiler
开源 RRAM 编译器
- DOI:10.1109/newcas52662.2022.9842222
- 发表时间:2022
- 期刊:
- 影响因子:0
- 作者:Antoniadis D
- 通讯作者:Antoniadis D
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Themis Prodromakis其他文献
Design of a low-power Digital-to-Pulse Converter (DPC) for in-memory-computing applications
- DOI:
10.1016/j.mejo.2024.106420 - 发表时间:
2024-11-01 - 期刊:
- 影响因子:
- 作者:
Khaled Humood;Yihan Pan;Shiwei Wang;Alexander Serb;Themis Prodromakis - 通讯作者:
Themis Prodromakis
Forming-Free and Non-linear Resistive Switching in Bilayer $$\hbox {HfO}_{\textrm{x}}$$ / $$\hbox {TaO}_{\textrm{x}}$$ Memory Devices by Interface-Induced Internal Resistance
- DOI:
10.1007/s13391-023-00481-w - 发表时间:
2024-02-06 - 期刊:
- 影响因子:2.600
- 作者:
Mari Napari;Spyros Stathopoulos;Themis Prodromakis;Firman Simanjuntak - 通讯作者:
Firman Simanjuntak
Themis Prodromakis的其他文献
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{{ truncateString('Themis Prodromakis', 18)}}的其他基金
AI for Productive Research & Innovation in eLectronics (APRIL) Hub
人工智能促进高效研究
- 批准号:
EP/Y029763/1 - 财政年份:2024
- 资助金额:
$ 300.04万 - 项目类别:
Research Grant
Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant
功能性氧化物可重构技术 (FORTE):一项计划资助
- 批准号:
EP/R024642/1 - 财政年份:2018
- 资助金额:
$ 300.04万 - 项目类别:
Research Grant
An electronic-based ELISA combined with microfluidics
基于电子的 ELISA 与微流体技术相结合
- 批准号:
EP/L020920/1 - 财政年份:2014
- 资助金额:
$ 300.04万 - 项目类别:
Research Grant
Plasticity in NEUral Memristive Architectures
神经忆阻架构中的可塑性
- 批准号:
EP/J00801X/2 - 财政年份:2013
- 资助金额:
$ 300.04万 - 项目类别:
Research Grant
Reliably unreliable nanotechnologies
可靠但不可靠的纳米技术
- 批准号:
EP/K017829/1 - 财政年份:2013
- 资助金额:
$ 300.04万 - 项目类别:
Fellowship
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