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Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant

Functional Oxide Reconfigurable Technologies (FORTE): A Programme Grant
功能性氧化物可重构技术 (FORTE):一项计划资助
批准号:
EP/R024642/2
负责人:
Themis Prodromakis
金额:
$300.04万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2022
资助国家:
英国
项目状态:
未结题
起止时间:
2022 至 --

项目摘要

项目成果

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中文摘要
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英文摘要
Our vision is to rejuvenate modern electronics by developing and enabling a new approach to electronic systems where reconfigurability, scalability, operational flexibility/resilience, power efficiency and cost-effectiveness are combined. This vision will be delivered by breaking out of the large, but comprehensively explored realm of CMOS technology upon which virtually all modern electronics are based; consumer and non-consumer alike.Introducing novel nanoelectronic components never before used in the technology we all carry around in our phones will introduce new capabilities that have thus far been unattainable due to the limitations of current hardware technology. The resulting improved capability of engineers to squeeze more computational power in ever smaller areas at ever lower power costs will unlock possibilities such as: a) truly pervasive Internet-of-Things computing where minute sensors consuming nearly zero power monitor the world around us and inform our choices, b) truly smart implants that within extremely limited power and size budgets can not only interface with the brain, but also process that data in a meaningful way and send the results either onwards to e.g. a doctor, or even feed it back into the brain for further processing, c) radiation-resistant electronics to be deployed in satellites and aeroplanes, civilian and military and improve communication reliability while driving down maintenance costs.In building this vision, our project will deliver a series of scientific and commercial objectives: i) Developing the foundations of nanoelectronic component (memristive) technologies to the point where it becomes a commercially available option for the general industrial designer. ii) Setting up a fully supported (models, tools, design rules etc.), end-to-end design infrastructure so that anyone with access to industry standard software used for electronics design today may utilise memristive technology in their design. iii) Introduce a new design paradigm where memristive technologies are intimately integrated with traditional analogue and digital circuitry in order to deliver performance unattainable by any in isolation. This includes designing primitive hardware modules that can act as building-blocks for higher level designs, allowing engineers to construct large-scale systems without worrying about the intricate details of memristor operation. iv) Actively foster a community of users, encouraged to explore potential commercial impact and further scientific development stemming from our work whilst feeding back into the project through e.g. collaborations. v) Start early by beginning to commercialise the most mature aspects of the proposed research as soon as possible in order to create jobs in the UK. Vast translational opportunities exist via: a) The direct commercialisation of project outcomes, specifically developed applications (prove in lab, then obtain venture capital funding and commercialise), b) The generation of novel electronic designs (IP / design bureau model; making the UK a global design centre for memristive technology-based electronics) and c) Selling tools developed to help accelerate the project (instrumentation, CAD and supporting software). Our team (academic and industry) is ideally placed for delivering this disruptive vision that will allow our society to efficiently expand the operational envelope of electronics, enabling its use in formidable environments as well as reuse or re-purpose electronics affordably.
期刊论文(10)
专著(0)
科研奖励(0)
会议论文
Thermal Effects on Initial Volatile Response and Relaxation Dynamics of Resistive RAM Devices
热效应对阻性 RAM 器件初始易失性响应和弛豫动态的影响
DOI: 10.1109/led.2022.3145620
发表时间: 2022
期刊: IEEE Electron Device Letters
影响因子: 4.9
作者: [Abbey T]
通讯作者: Abbey T
DOI: 10.1109/iscas48785.2022.9937868
发表时间: 2022-05
期刊: 2022 IEEE International Symposium on Circuits and Systems (ISCAS)
影响因子: --
作者: [Abdulaziz Alshaya;Saleh Komies;L. Xie;Jiawei Shen;C. Papavassiliou]
通讯作者: Abdulaziz Alshaya;Saleh Komies;L. Xie;Jiawei Shen;C. Papavassiliou
Precise Characterizing of FPGAs in Production Systems
生产系统中 FPGA 的精确表征
DOI: --
发表时间: 2022
期刊:
影响因子: --
作者: [Babaei B]
通讯作者: Babaei B
Digital in-memory stochastic computing architecture for vector-matrix multiplication
用于向量矩阵乘法的数字内存随机计算架构
DOI: 10.3389/fnano.2023.1147396
发表时间: 2023
期刊: Frontiers in Nanotechnology
影响因子: --
作者: [Agwa S]
通讯作者: Agwa S
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