Molecular Beam Epitaxy of Boron Nitride and Graphene layers and heterostructures.

氮化硼和石墨烯层和异质结构的分子束外延。

• 批准号: EP/L013908/1
• 负责人: Sergei Novikov
• 金额: $ 61.34万
• 依托单位: University of Nottingham
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2014
• 资助国家: 英国
• 起止时间: 2014 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FL013908%2F1
• 关键词: Molecular; Beam; Epitaxy; Boron; Nitride

We will grow high-quality, large-area epitaxial layers and heterostructures composed of boron nitride, graphene and related compounds using molecular beam epitaxy (MBE). These graphene/boron nitride heterostructures are members of a new class of multilayer ("vertical transport") electronic devices in which charge carriers can move perpendicular to the plane of the graphene layers. We will identify and optimise the conditions for growth of single atomic layers of boron nitride and graphene, followed by the programmed growth and processing of heterostructures in which single or multiple layers of graphene and boron nitride are grown sequentially to provide architectures by which new types of band-structure engineered functional device can be realised. In February 2013 EPSRC supported our proposed research by awarding us an Equipment Grant to purchase a custom designed molecular beam epitaxy (MBE) system dedicated to the growth of epitaxial layers and heterostructures composed of graphene and boron nitride. The University of Nottingham regards this project as strategically important and is supporting it by providing the cost of installation of the new MBE system and the initial running costs for 2 years. We are now applying for this new grant to secure the research staff (1.5 of PDRA) to run the proposed 3-year project.

我们将使用分子束外延（MBE）技术生长由氮化硼、石墨烯和相关化合物组成的高质量、大面积外延层和异质结构。这些石墨烯/氮化硼异质结构是新型多层（“垂直传输”）电子器件的成员，其中电荷载流子可以垂直于石墨烯层的平面移动。我们将确定并优化氮化硼和石墨烯单原子层的生长条件，然后进行异质结构的编程生长和加工，其中单层或多层石墨烯和氮化硼依次生长，以提供可以实现新型能带结构工程功能器件的架构。 2013 年 2 月，EPSRC 通过授予我们设备补助金来支持我们提出的研究，以购买定制设计的分子束外延 (MBE) 系统，该系统专用于生长由石墨烯和氮化硼组成的外延层和异质结构。诺丁汉大学认为该项目具有重要战略意义，并通过提供新MBE系统的安装费用和两年的初始运行费用来支持该项目。我们现在正在申请这笔新拨款，以确保研究人员（PDRA 的 1.5 名）能够运行拟议的 3 年项目。

项目成果

High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes.

• DOI: 10.3390/ma11071119
• 发表时间: 2018-06-30
• 期刊: Materials (Basel, Switzerland)
• 作者: Cheng TS;Summerfield A;Mellor CJ;Khlobystov AN;Eaves L;Foxon CT;Beton PH;Novikov SV
• 通讯作者: Novikov SV

Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride

• DOI: 10.1103/physrevx.12.011057
• 发表时间: 2022-03-24
• 期刊: PHYSICAL REVIEW X
• 影响因子: 12.5
• 作者: Cassabois, G.;Fugallo, G.;Novikov, S., V
• 通讯作者: Novikov, S., V

Corrigendum: Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.

• DOI: 10.1038/srep46799
• 发表时间: 2017-05-08
• 期刊: Scientific reports
• 影响因子: 4.6
• 作者: Cho YJ;Summerfield A;Davies A;Cheng TS;Smith EF;Mellor CJ;Khlobystov AN;Foxon CT;Eaves L;Beton PH;Novikov SV
• 通讯作者: Novikov SV

Hexagonal Boron Nitride Tunnel Barriers Grown on Graphite by High Temperature Molecular Beam Epitaxy.

• DOI: 10.1038/srep34474
• 发表时间: 2016-09-29
• 期刊: Scientific reports
• 影响因子: 4.6
• 作者: Cho YJ;Summerfield A;Davies A;Cheng TS;Smith EF;Mellor CJ;Khlobystov AN;Foxon CT;Eaves L;Beton PH;Novikov SV
• 通讯作者: Novikov SV

High-temperature molecular beam epitaxy of hexagonal boron nitride layers

• DOI: 10.1116/1.5011280
• 发表时间: 2018-03-01
• 期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
• 影响因子: 1.4
• 作者: Cheng, Tin S.;Summerfield, Alex;Novikov, Sergei V.
• 通讯作者: Novikov, Sergei V.