NEW, HIGH Z SEMICONDUCTOR SENSOR FOR POSITRON TOMOGRAPHY
NEW, HIGH Z SEMICONDUCTOR SENSOR FOR POSITRON TOMOGRAPHY
批准号:
3507942
负责人:
MICHAEL R. SQUILLANTE
金额:
$24.67万
依托单位国家:
美国
项目类别:
财政年份:
1989
资助国家:
美国
项目状态:
已结题
起止时间:
1989-03-01 至 1992-03-31
中文摘要
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英文摘要
(Adapted from investigator's abstract): Positron Emission Tomography
(PET) is a noninvasive medical imaging technique which provides an image
of a positron emitting radio pharmaceutical and its distribution in the
body on a metabolic level. It is becoming an important fundamental tool
for both clinical diagnosis and medical research. The heart of this
instrument is a large, circular array of gamma ray detectors. The
complexity, cost and difficulty of building an instrument with hundreds of
these bulky and fragile photosensors is a significant problem.
The availability of a suitable solid state sensor to replace the
phototubes and scintillator crystals would be a major breakthrough in the
design of high resolution positron tomography cameras. Such a sensor
would detect the 511 keV photons directly to produce an electronic pulse
without an intermediate optical conversion. It would be a small, stable
device which would make construction of rugged, compact multi-detector
arrays for PET systems possible.
At Radiation Monitoring Devices, Inc., gamma ray detectors made from a new
semi-conductor material, thallium bromide (T1Br) have been investigated.
T1Br has the same effective Z as bismuth germinate (BGO), the leading
scintillator material used for PET, and higher density. Preliminary
results indicate T1Br has potential for low noise and high energy
resolution. The properties of this material make it a unique
semiconductor which appears to have the characteristics required to
finally make a semiconductor based PET camera.
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