Innovative High Resolution Dental X-ray Imager

摘要 辐射监测设备公司(RMD)建议开发一种新的牙科X射线成像仪，它将 拥有数字技术的所有优势，保留最理想的图像质量方面 这种薄膜乳剂提供了，最重要的是，减少了患者的剂量。该设备将是一个 两种技术的融合-硅基成像阵列和半导体X射线转换 层次感。更好地理解了硅的功能，使用了CCD和CMOS型器件 建立在牙科成像领域。半导体转换层的应用越多 具有挑战性的方面，但相关医学领域(如乳房X光检查)正在取得进展 展示出超高质量图像的潜力。 RMD希望给牙科成像带来类似的技术革命。变种为 上面提到的技术是用一种 不同的半导体层-碘化汞(HgI2)-将提供更高的剂量效率 和更高的图像对比度。取代a-SiTFT阵列，将采用CMOS型无源像素阵列 对于HgI2转换器层。牙科成像的好处是牙科医生将得到兴奋 分辨率图像，他们习惯用胶片，但现在剂量要低得多 有耐心的。 RMD将致力于将碘化汞探测层裁剪成高分辨率的CMOS 设备。工作计划将包括粉末制造、评估层成分、 准备与HgI2层和CMOS层一起工作的介质层和电极层 结构，并完成广泛的电气和物理测试，以测量x射线灵敏度 和图像质量。在完成时，希望已经展示了一种具有卓越性能的设备 图像潜在质量优于传统数字技术的荧光粉和 闪烁体。而且由于关键的直接转换技术，每幅图像的剂量将大大 从目前的规范中减少。

Abstract Radiation Monitoring Devices (RMD) proposes to develop a new dental x-ray imager that will have all the advantages of a digital technology, retain the most desirable aspects of image quality that film emulsions provide, and most importantly, reduce dose to patients. The device will be a blend of two technologies – silicon based imaging arrays and semiconductor x-ray conversion layers. The silicon capabilities are better understood, with CCD and CMOS devices well established in dental imaging. The application of a semiconductor conversion layer is the more challenging aspect, but advances being made in related medical fields (such as mammography) demonstrate the potential for extraordinary quality images. RMD wants to bring a similar technological revolution to dental imaging. The variation to the above referenced technology is to replace the current x-ray receptor (selenium) with a different semiconductor layer – mercuric iodide (HgI2) – that will provide greater dose efficiency and higher image contrast. Instead of a-Si TFT arrays, a CMOS passive pixel array will be adapted for the HgI2 converter layer. The advantage to dental imaging is that dentists will get the high resolution images that they are accustomed to with film, but now with a much lower dose to the patient. RMD will work on tailoring mercuric iodide detection layers to a high resolution CMOS device. The work plan will encompass powder fabrication, evaluating layer compositions, preparing dielectric and electrode layers to work in conjunction with the HgI2 layer and CMOS structure, and completing a wide range of electrical and physical tests to gauge x-ray sensitivity and image quality. At completion, it is desired to have demonstrated a device with exceptional image potential quality that is better than conventional digital technology with phosphors and scintillators. And because of the key direct converter technology, the dose per image will be vastly reduced from current norms.