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Integration of Novel Materials in Spintronic Devices

Integration of Novel Materials in Spintronic Devices
自旋电子器件中新型材料的集成
批准号:
EP/P005152/1
负责人:
Stephan Hofmann
金额:
$125.74万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2016
资助国家:
英国
项目状态:
已结题
起止时间:
2016 至 --

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中文摘要
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英文摘要
The continued scaling of charge-based computing devices is reaching its limits and, both for more Moore (continued scaling) and more than Moore (functional diversification), the International Semiconductor Roadmap is looking at new materials and their integration in existing manufacturing technology. Two dimensional (2D) materials, such as graphene, exhibit unique electrical, thermal and mechanical properties and show promise as components for a wide range of device applications, in particular spintronics and next generation micro/optoelectronics and systems. Graphene can not only support very high carrier mobilities and current densities, but also has small spin-orbit coupling and large electron coherence length. Also, due to its atomic thickness, it is very interesting for tunnel junction device architectures. With hundreds of millions of computer hard drives sold every year, magnetism is currently the main repository of information storage. It is the electron "spin," the elementary nanomagnet, that carries the information. Beyond storage, spintronics and such new device architectures are foreseen as the foundation for a new paradigm for information processing toward low-power-consumption nonvolatile "green" electronics. This proposal aims at creating an international research network to develop new integrated electronic and spin-based device concepts based on 2D materials, to overcome key experimental problems such as controlled interfacing and to develop integrated manufacturing technology, which would allow 2D materials to enter the semiconductor roadmap, the key to unlocking their commercial potential. The proposal thereby combines the world leading expertise of the international partners, in particular on the development and manufacture of state-of-the-art semiconductor devices of the Japanese Partners, on 2D manufacturing technology and device material know-how of the UK partners and the spintronics expertise of the French partners. The proposed research has a strong industrial alignment, paving the way for realistic routes to markets for these new materials and device architectures.
期刊论文(10)
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会议论文
DOI: 10.1088/2053-1583/ab6269
发表时间: 2020-01
期刊: 2D Materials
影响因子: 5.5
作者: [V. Babenko;Ye Fan;Vlad-Petru Veigang-Radulescu;B. Brennan;A. Pollard;Oliver J. Burton;J. Alexander-Webber;R. Weatherup;B. Canto;M. Otto;D. Neumaier;S. Hofmann]
通讯作者: V. Babenko;Ye Fan;Vlad-Petru Veigang-Radulescu;B. Brennan;A. Pollard;Oliver J. Burton;J. Alexander-Webber;R. Weatherup;B. Canto;M. Otto;D. Neumaier;S. Hofmann
DOI: 10.1021/acs.chemmater.0c02296
发表时间: 2020-09-22
期刊: Chemistry of materials : a publication of the American Chemical Society
影响因子: --
作者: [Braeuninger-Weimer P, Burton OJ, Zeller P, Amati M, Gregoratti L, Weatherup RS, Hofmann S]
通讯作者: Hofmann S
Self-limiting Growth Mechanisms for Stable Monolayer Films of Non-van-der-Waals Oxides
  • 批准号:
    EP/V047515/1
  • 项目类别:
    Research Grant
  • 资助金额:
    $25.76万
  • 财政年份:
    2021
  • 负责人:
    Stephan Hofmann
  • 依托单位:
Expanding the Environmental Frontiers of Operando Metrology for Advanced Device Materials Development
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    EP/T001038/1
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    $130.81万
  • 财政年份:
    2020
  • 负责人:
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    $7.85万
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    2016
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    $11.53万
  • 财政年份:
    2015
  • 负责人:
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  • 依托单位:
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白术多糖通过novel-mir2双靶向TRADD/MLKL缓解免疫抑制雏鹅的胸腺程序性坏死
  • 批准号:
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  • 项目类别:
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  • 资助金额:
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