Vertical cubic GaN LEDs on 150mm 3C-SiC substrates

150mm 3C-SiC 基板上的垂直立方 GaN LED

• 批准号: EP/P03036X/1
• 负责人: David Wallis
• 金额: $ 26.52万
• 依托单位: University of Cambridge
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FP03036X%2F1
• 关键词: Vertical; cubic; GaN; LEDs; 150mm

Our research is based on gallium nitride and its alloys, an amazing family of materials which can emit light over a wide range of colours - from the infra-red (IR) to the ultra-violet (UV). Already these materials are widely used in light emitting devices that are part of our everyday lives, perhaps most commonly in blue light emitting diodes (LEDs) and laser diodes (LDs). The LDs are at the heart of the blu-ray HD-DVD player, whilst the blue LEDs are combined with phosphors that emit other colours of light to produce white light. Such white LEDs are now very common in bicycle lights, torches and backlighting for displays on portable electronic devices from mobile phones to tablet computers.However, the efficiency of green LEDs is much lower than that of blue LEDs: this is called the green-gap problem. If we could make green LEDs more efficient we could produce low-cost high quality white light by mixing red, green and blue LEDs, eliminating the need for phosphors. This would make LED lighting even more efficient than it is now and also improve the quality of the light. A key reason green LEDs are less efficient than blue is because there is a much stronger internal electric field inside the green LEDs. However, if we can grow the gallium nitride in a different form, cubic, from the standard form, hexagonal, we can eliminate this internal electric field across the LED, which should greatly increase its efficiency. We have found an exciting new way to do this, by growing the gallium nitride LEDs on a special form of a material called silicon carbide, developed by a small company called Anvil Semiconductors. Together Cambridge, Anvil and Plessey have just completed an innovate UK funded project that has demonstrated many of the key steps to deliver high efficiency, low cost GaN based green LEDs based on cubic GaN, i.e. the growth and processing of cubic-GaN on 150mm diameter SiC on Si substrates. This offers a route to the large scale, low cost manufacture of green LEDs along side Plessey's existing (hexagonal) GaN on Si technology for blue LEDs. This new project will enable the cubic GaN technology to be taken to the next level, allowing the production of the 150mm SiC/Si substrates to be scaled up (Anvil), the quality of the cubic-GaN to be further improved (Cambridge), the cubic-GaN growth process to be transferred to industrial growth machines and a commercial device process to be developed (Plessey). This will bring efficient, low cost green LEDs one step closer, advancing the replacement of incandescent lights and CFLs with solid state lighting. It would also reduce electricity usage, save carbon emissions and generate new manufacturing jobs in UK industry.

我们的研究基于氮化镓及其合金，这是一个令人惊叹的材料系列，可以发出多种颜色的光 - 从红外线 (IR) 到紫外线 (UV)。这些材料已经广泛应用于我们日常生活中的发光器件，最常见的可能是蓝光发光二极管 (LED) 和激光二极管 (LD)。 LD 是蓝光 HD-DVD 播放器的核心，而蓝色 LED 与发射其他颜色光的荧光粉结合以产生白光。这种白光 LED 现在在自行车灯、手电筒和便携式电子设备（从手机到平板电脑）的显示器背光中非常常见。但是，绿光 LED 的效率远低于蓝光 LED：这称为绿隙问题。如果我们能够提高绿色 LED 的效率，我们就可以通过混合红色、绿色和蓝色 LED 来产生低成本、高质量的白光，从而消除对荧光粉的需求。这将使 LED 照明比现在更加高效，并提高光的质量。绿色 LED 效率低于蓝色 LED 的一个关键原因是绿色 LED 内部存在更强的内部电场。然而，如果我们能够以与标准形式六方不同的形式生长立方氮化镓，我们就可以消除 LED 上的内部电场，这将大大提高其效率。我们找到了一种令人兴奋的新方法来实现这一目标，即在一种名为碳化硅的特殊材料上生长氮化镓 LED，该材料由一家名为 Anvil Semiconductors 的小公司开发。 Cambridge、Anvil 和 Plessey 刚刚共同完成了一项由英国资助的创新项目，该项目展示了提供基于立方 GaN 的高效、低成本 GaN 绿色 LED 的许多关键步骤，即在 Si 衬底上的 150 毫米直径 SiC 上生长和加工立方 GaN。这为大规模、低成本制造绿色 LED 以及 Plessey 现有的蓝色 LED 硅基氮化镓 (六角形) 技术提供了一条途径。这个新项目将使立方氮化镓技术提升到一个新的水平，从而扩大150毫米SiC/Si衬底的生产规模（Anvil），进一步提高立方氮化镓的质量（剑桥），将立方氮化镓生长工艺转移到工业生长机器上，并开发商业器件工艺（Plessey）。这将使高效、低成本的绿色 LED 更进一步，推动固态照明取代白炽灯和 CFL。它还将减少用电量，减少碳排放，并为英国工业创造新的制造业就业机会。

项目成果

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

生长温度和 V/III 比对 MOVPE 生长的立方闪锌矿 GaN 表面形貌的影响

• DOI: 10.1063/1.5046801
• 发表时间: 2018
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Lee L

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

堆垛层错对闪锌矿GaN光致发光光谱的影响

• DOI: 10.1063/1.5026267
• 发表时间: 2018
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Church S

Multimicroscopy of cross-section zincblende GaN LED heterostructure

闪锌矿 GaN LED 异质结构横截面的多重显微镜检查

• DOI: 10.1063/5.0058429
• 发表时间: 2021
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Ding B

Photoluminescence studies of cubic GaN epilayers

• DOI: 10.1002/pssb.201600733
• 发表时间: 2017-08-01
• 期刊: PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
• 影响因子: 1.6
• 作者: Church, S. A.;Hammersley, S.;Dawson, P.
• 通讯作者: Dawson, P.

Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

3C-SiC/Si 衬底上 MOVPE 生长的闪锌矿 GaN 成核层的研究

• DOI: 10.17863/cam.42967
• 发表时间: 2019
• 作者: Lee L