Compound Semiconductor Underpinning Equipment

化合物半导体基础设备

• 批准号: EP/P030556/1
• 负责人: Hywel Thomas
• 金额: $ 254.84万
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FP030556%2F1
• 关键词: Compound; Semiconductor; Underpinning; Equipment

Compound Semiconductor (CS) materials are a Key Enabling Technology at the heart of modern society. They are central to the development of, for example, the 5G network, new energy efficient lighting, smart phones, satellite communications systems, power electronics for the next generation of electric vehicles and new imaging techniques. Simply put, these technologies support our connected world, our health, our security and the environment. The next generation of these technologies can only be achieved with a step change in CS manufacturing and we aim to the UK at the centre of this CS manufacturing research. This is not only important activity in its own right but will also support systems researchers in all of these important fields. The step change will be achieved by applying the manufacturing disciplines and approaches of Silicon to Compound Semiconductors and by combining CS with Silicon. This includes developing integrated epitaxial growth and processing with critical yield and reliability analysis; establishing new standards for CS device production, with a guaranteed number of wafer starts per week for key statistical based process control and development via IT infrastructure; solving the scientific and manufacturing challenges in wafer size scale-up combining large scale, 150-200mm diameter growth and fabrication for GaAs based and GaN based materials and apply this to existing and developed advanced processes; introducing a multi-project wafer culture (as is the norm in the silicon world) to share costs and encourage the widespread use of larger wafers by academics and SMEs.Critical to this approach is the characterisation equipment, which can be used in-line (during the manufacturing process) and over the larger (up to 200mm diameter) CS wafers we will utilise. This proposal is for this characterisation equipment to add to the large investment already made by Cardiff University and partners in epitaxial growth and fabrication infrastructure and equipment. We also ask for apparatus to allow high quality insulating layers to be deposited, which will enable the multi-project wafer approach to produce world leading performance, for access by our UK based circuit and system designers.

化合物半导体(CS)材料是现代社会核心的关键使能技术。例如，它们是5G网络、新的节能照明、智能手机、卫星通信系统、下一代电动汽车的电力电子和新成像技术发展的核心。简而言之，这些技术支持我们互联的世界、我们的健康、我们的安全和环境。下一代这些技术只能通过CS制造的一步改变来实现，我们的目标是将英国作为这项CS制造研究的中心。这不仅本身就是一项重要的活动，而且还将支持所有这些重要领域的系统研究人员。这一步骤的改变将通过将硅的制造原理和方法应用于化合物半导体，并通过将CS与硅相结合来实现。这包括开发具有关键成品率和可靠性分析的集成外延生长和工艺；为CS器件生产建立新的标准，通过IT基础设施保证基于关键统计的工艺控制和开发的晶片每周开工数量；解决晶片尺寸扩大方面的科学和制造挑战，将大规模、150-200 mm直径的生长和制造结合在一起，用于GaAs基和GaN基材料，并将其应用于现有和开发的先进工艺；引入多项目晶圆文化(这是硅片世界的标准)，以分担成本，并鼓励学者和中小企业广泛使用较大的晶圆。这种方法的关键是表征设备，它可以在线(在制造过程中)使用，也可以在我们将使用的较大(直径达200 mm)的CS晶片上使用。这项提议是为了使这种表征设备增加卡迪夫大学和合作伙伴在外延生长和制造基础设施和设备方面已经进行的大量投资。我们还要求能够沉积高质量绝缘层的设备，这将使多项目晶片方法能够产生世界领先的性能，供我们英国的电路和系统设计师使用。

项目成果

Comparative Study of 940 nm VCSELs Grown on Ge and GaAs Substrates

在 Ge 和 GaAs 衬底上生长的 940 nm VCSEL 的比较研究

• DOI: 10.1109/ipc53466.2022.9975478
• 发表时间: 2022
• 作者: Baker J

Sub-mA Threshold Current Vertical Cavity Surface Emitting Lasers with a Simple Fabrication Process

具有简单制造工艺的亚毫安阈值电流垂直腔表面发射激光器

• DOI: 10.1109/ipc48725.2021.9592977
• 发表时间: 2021
• 作者: Baker J

Sub-mA threshold current quick fabrication VCSELs for characterisation of epitaxial material over 150mm wafers

亚毫安阈值电流快速制造 VCSEL，用于表征 150mm 晶圆上的外延材料

• DOI: 10.1117/12.2610179
• 发表时间: 2022
• 作者: Baker J

Quick Fabrication VCSELs for Characterisation of Epitaxial Material

用于表征外延材料的快速制造 VCSEL

• DOI: 10.3390/app11209369
• 发表时间: 2021
• 期刊: Applied Sciences
• 作者: Baker J

Impact of strain-induced bow on the performance of VCSELs on 150mm GaAs- and Ge-substrate wafers

应变引起的弯曲对 150mm GaAs 和 Ge 衬底晶圆上的 VCSEL 性能的影响

• DOI: 10.1117/12.2624492
• 发表时间: 2022
• 作者: Baker J