Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules
Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules
批准号:
EP/R004366/1
负责人:
Olayiwola Alatise
金额:
$155.21万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2017
资助国家:
英国
项目状态:
已结题
起止时间:
2017 至 --
中文摘要
该项目提出了电力变流器运行管理和使用的模式转变,需要进行积极的可靠性管理。这涉及到预测故障和管理电源转换器的剩余使用寿命。电力电子转换器是现代文明不可缺少的。他们负责一系列应用的电力转换,从便携式手持电子产品的几瓦到整个电力网络的几吉瓦。在过去的几十年里,对工业脱碳的需求加强了对更高效、更可靠的电力电子器件、组件和转换器的研究。这是因为电力电子转换器是集成可再生能源(太阳能、风能、潮汐等)所必需的。进入电力系统。此外,电力运输被视为减少温室气体排放的关键,它严重依赖电力电子设备。混合动力和全电动汽车需要电力转换器来控制牵引机,同样,电动列车也需要电力转换器。船舶推进也采用了电动模式,用变频器驱动的电机取代了燃气驱动的涡轮。然而,随着功率转换器以越来越高的功率密度驱动,人们认识到了几个可靠性问题。电源转换器由电源模块组成,而电源模块又由电隔离但导热的封装中的开关电源半导体器件组成。在过去的十年里,电力半导体器件及其机械互连的可靠性一直是工业界和学术界研究的热点。在过去的几十年里,硅器件一直是电力电子学中的主要技术,然而,碳化硅和氮化镓器件已经成为可行的替代品。这些新器件被称为宽禁带器件,因为它们具有比硅更大的带隙。简单地说,这意味着它们可以承受更多的能量,从而提高电力转换的效率。这些WBG半导体的可靠性越来越成为一个非常重要的话题,因为这些新设备正在获得越来越多的市场渗透率。在故障成本较高的应用中,例如汽车牵引、航空航天和并网变流器,新技术的吸收速度很慢。通过开发可以提高这些新设备的可靠性并在线监测其健康状况的技术,采用新的WBG电源模块的风险大大降低。本项目旨在通过为基于WBG的电力电子模块提供状态监测和健康管理平台来实现这一目标。
英文摘要
This project proposes a paradigm shift in the operational management and use of power converters that entails active reliability management. This involves predicting failure and managing the remaining useable life of the power converter. Power electronic converters are indispensable to modern civilisation. They are responsible for electrical power conversion for a range of applications that span the few watts for portable hand-held electronics to several gigawatts for entire electrical power networks. Over the past few decades, the need for industrial decarbonisation has intensified the research into more efficient and reliable power electronic devices, components and converters. This is because power electronic converters are required for integrating renewable energy sources (solar, wind, tidal etc.) into the electrical system. Furthermore, electric transportation, which is seen as critical for reducing green-house emissions, relies very heavily on power electronics. Hybrid and full electric vehicles require power converters to control the traction machine, likewise, electric trains require power converters. Marine propulsion has also adopted the electric paradigm with the gas driven turbine replaced by a converter driven electrical motor. However, as power converters are driven at increasingly higher power densities, several reliability concerns have been recognised. The power converters are comprised of power modules, which in turn are comprised of switching power semiconductor devices in an electrically isolating but thermally conducting package. The reliability of the power semiconductor device and its mechanical interconnects has been intensely investigated by industrial and academic researchers over the last decade. Silicon devices have been the principal technology in power electronics for the last few decades however, silicon carbide and gallium nitride devices have emerged as viable alternatives. These new devices are referred to as wide bandgap devices because they have energy bandgaps larger than that of silicon. The simply means that they can withstand more energy thereby increasing the efficiency of power conversion. The reliability of these WBG semiconductors is increasingly becoming a very important topic since these new devices are gaining increasing market penetration. In applications with high failure costs, for example, automotive traction, aerospace and grid connected converters, the uptake of new technology is slow. By developing technologies that can improve the reliability of these new devices and monitor their health on-line, the uptake of new WBG power modules is very significantly de-risked. This project aims to do just this, by providing a condition monitoring and health management platform for WBG based power electronic modules.
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DOI:
10.23919/ipec.2018.8507853
发表时间:
2018
期刊:
影响因子:
--
作者:
[Davletzhanova Z]
通讯作者:
Davletzhanova Z
UIS performance and ruggedness of stand-alone and cascode SiC JFETs
独立和共源共栅 SiC JFET 的 UIS 性能和耐用性
DOI:
10.1016/j.microrel.2020.113803
发表时间:
2020
期刊:
Microelectronics Reliability
影响因子:
1.6
作者:
[Agbo S]
通讯作者:
Agbo S
Simulations and Measurements of Failure Modes in SiC Cascode JFETs under Short Circuit Conditions
短路条件下 SiC 共源共栅 JFET 失效模式的仿真和测量
DOI:
10.1109/compel52922.2021.9646031
发表时间:
2021
期刊:
影响因子:
--
作者:
[Agbo S]
通讯作者:
Agbo S
Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs
SiC 平面 MOSFET、SiC 沟槽 MOSFET 和 SiC 共源共栅 JFET 短路故障模式比较
DOI:
10.1109/wipda49284.2021.9645092
发表时间:
2021
期刊:
影响因子:
--
作者:
[Bashar E]
通讯作者:
Bashar E
DOI:
10.1016/j.microrel.2020.113644
发表时间:
2020-07
期刊:
Microelectronics Reliability
影响因子:
1.6
作者:
[S. Agbo;J. Ortiz-Gonzalez;O. Alatise]
通讯作者:
S. Agbo;J. Ortiz-Gonzalez;O. Alatise
共 9 条
Predictive Reliability Modelling and Characterization of Silicon Carbide Power MOS-Transistors in Grid-Connected Voltage Source Converters
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批准号:EP/K008161/1
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项目类别:Research Grant
-
资助金额:$12.71万
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财政年份:2013
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负责人:Olayiwola Alatise
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依托单位:
海外基金