Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules

WBG 功率模块的可靠性、状态监测和健康管理技术

基本信息

  • 批准号:
    EP/R004366/1
  • 负责人:
  • 金额:
    $ 155.21万
  • 依托单位:
  • 依托单位国家:
    英国
  • 项目类别:
    Research Grant
  • 财政年份:
    2017
  • 资助国家:
    英国
  • 起止时间:
    2017 至 无数据
  • 项目状态:
    已结题

项目摘要

This project proposes a paradigm shift in the operational management and use of power converters that entails active reliability management. This involves predicting failure and managing the remaining useable life of the power converter. Power electronic converters are indispensable to modern civilisation. They are responsible for electrical power conversion for a range of applications that span the few watts for portable hand-held electronics to several gigawatts for entire electrical power networks. Over the past few decades, the need for industrial decarbonisation has intensified the research into more efficient and reliable power electronic devices, components and converters. This is because power electronic converters are required for integrating renewable energy sources (solar, wind, tidal etc.) into the electrical system. Furthermore, electric transportation, which is seen as critical for reducing green-house emissions, relies very heavily on power electronics. Hybrid and full electric vehicles require power converters to control the traction machine, likewise, electric trains require power converters. Marine propulsion has also adopted the electric paradigm with the gas driven turbine replaced by a converter driven electrical motor. However, as power converters are driven at increasingly higher power densities, several reliability concerns have been recognised. The power converters are comprised of power modules, which in turn are comprised of switching power semiconductor devices in an electrically isolating but thermally conducting package. The reliability of the power semiconductor device and its mechanical interconnects has been intensely investigated by industrial and academic researchers over the last decade. Silicon devices have been the principal technology in power electronics for the last few decades however, silicon carbide and gallium nitride devices have emerged as viable alternatives. These new devices are referred to as wide bandgap devices because they have energy bandgaps larger than that of silicon. The simply means that they can withstand more energy thereby increasing the efficiency of power conversion. The reliability of these WBG semiconductors is increasingly becoming a very important topic since these new devices are gaining increasing market penetration. In applications with high failure costs, for example, automotive traction, aerospace and grid connected converters, the uptake of new technology is slow. By developing technologies that can improve the reliability of these new devices and monitor their health on-line, the uptake of new WBG power modules is very significantly de-risked. This project aims to do just this, by providing a condition monitoring and health management platform for WBG based power electronic modules.
该项目提出了一个范式转变的运营管理和使用的电源转换器,需要积极的可靠性管理。这涉及预测故障和管理功率转换器的剩余可用寿命。电力电子转换器是现代文明不可或缺的。它们负责一系列应用的电力转换,从便携式手持电子设备的几瓦到整个电力网络的几千兆瓦。在过去的几十年里,工业脱碳的需求加强了对更高效、更可靠的电力电子设备、组件和转换器的研究。这是因为需要电力电子转换器来集成可再生能源(太阳能、风能、潮汐能等)。进入电力系统。此外,被视为减少温室气体排放的关键的电力运输非常依赖电力电子。混合动力和全电动汽车需要功率转换器来控制牵引机,同样,电动火车也需要功率转换器。船舶推进也采用了电力范例,其中气体驱动的涡轮机被转换器驱动的电动机代替。然而,随着功率转换器以越来越高的功率密度驱动,已经认识到几个可靠性问题。功率转换器由功率模块组成,功率模块又由电隔离但导热的封装中的开关功率半导体器件组成。在过去的十年中,功率半导体器件及其机械互连的可靠性一直受到工业和学术研究人员的强烈研究。在过去的几十年里,硅器件一直是电力电子领域的主要技术,然而,碳化硅和氮化镓器件已经成为可行的替代品。这些新器件被称为宽带隙器件,因为它们的能带隙大于硅的能带隙。这意味着它们可以承受更多的能量,从而提高功率转换的效率。这些WBG半导体的可靠性正日益成为一个非常重要的话题,因为这些新器件正在获得越来越多的市场渗透。在具有高故障成本的应用中,例如,汽车牵引、航空航天和并网转换器,新技术的吸收缓慢。通过开发可以提高这些新设备的可靠性并在线监测其健康状况的技术,新WBG功率模块的采用将大大降低风险。该项目旨在通过为基于WBG的电力电子模块提供状态监测和健康管理平台来实现这一目标。

项目成果

期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
A Technology Analysis of Voltage Sharing in Series Connected Power Devices
串联功率器件均压技术分析
  • DOI:
    10.23919/ipec.2018.8507853
  • 发表时间:
    2018
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Davletzhanova Z
  • 通讯作者:
    Davletzhanova Z
UIS performance and ruggedness of stand-alone and cascode SiC JFETs
独立和共源共栅 SiC JFET 的 UIS 性能和耐用性
  • DOI:
    10.1016/j.microrel.2020.113803
  • 发表时间:
    2020
  • 期刊:
  • 影响因子:
    1.6
  • 作者:
    Agbo S
  • 通讯作者:
    Agbo S
Simulations and Measurements of Failure Modes in SiC Cascode JFETs under Short Circuit Conditions
短路条件下 SiC 共源共栅 JFET 失效模式的仿真和测量
  • DOI:
    10.1109/compel52922.2021.9646031
  • 发表时间:
    2021
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Agbo S
  • 通讯作者:
    Agbo S
Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs
SiC 平面 MOSFET、SiC 沟槽 MOSFET 和 SiC 共源共栅 JFET 短路故障模式比较
  • DOI:
    10.1109/wipda49284.2021.9645092
  • 发表时间:
    2021
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Bashar E
  • 通讯作者:
    Bashar E
Performance of SiC cascode JFETs under single and repetitive avalanche pulses
  • DOI:
    10.1016/j.microrel.2020.113644
  • 发表时间:
    2020-07
  • 期刊:
  • 影响因子:
    1.6
  • 作者:
    S. Agbo;J. Ortiz-Gonzalez;O. Alatise
  • 通讯作者:
    S. Agbo;J. Ortiz-Gonzalez;O. Alatise
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Olayiwola Alatise其他文献

Second life potential of electric vehicle power electronics for more circular economies
  • DOI:
    10.1016/j.rser.2024.115238
  • 发表时间:
    2025-03-01
  • 期刊:
  • 影响因子:
  • 作者:
    Olayiwola Alatise;Ruizhu Wu;Arkadeep Deb;Jose Ortiz Gonzalez
  • 通讯作者:
    Jose Ortiz Gonzalez
Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics
  • DOI:
    10.1016/j.sse.2009.12.036
  • 发表时间:
    2010-06-01
  • 期刊:
  • 影响因子:
  • 作者:
    Olayiwola Alatise;Sarah Olsen;Anthony O’Neill
  • 通讯作者:
    Anthony O’Neill

Olayiwola Alatise的其他文献

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{{ truncateString('Olayiwola Alatise', 18)}}的其他基金

Predictive Reliability Modelling and Characterization of Silicon Carbide Power MOS-Transistors in Grid-Connected Voltage Source Converters
并网电压源转换器中碳化硅功率 MOS 晶体管的预测可靠性建模和表征
  • 批准号:
    EP/K008161/1
  • 财政年份:
    2013
  • 资助金额:
    $ 155.21万
  • 项目类别:
    Research Grant

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