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Defect Functionalized Sustainable Energy Materials: From Design to Devices Application

Defect Functionalized Sustainable Energy Materials: From Design to Devices Application
缺陷功能化可持续能源材料:从设计到设备应用
批准号:
EP/R034540/1
负责人:
Alexander Shluger
金额:
$59.99万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2018
资助国家:
英国
项目状态:
已结题
起止时间:
2018 至 --

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中文摘要
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英文摘要
This proposal will establish a world-class research and networking hub that can accelerate the creation of innovative materials for energy applications. The collaboration between the Tokyo Tech, Faculties of Mathematical and Physical Sciences (MAPS) and Engineering, UCL, and the McGill University, Canada will enable a new paradigm in materials research by engineering materials with defects and active sites tailored for applications in energy generation, storage and reduction. We aim to create sustainable materials, especially focusing on energy materials, such as electronic materials for low power consumption, high-efficiency photovoltaic devices, and high-efficiency power-saving catalytic processes. This collaboration will harness the existing complementary strength of the three institutions in developing materials for energy applications and will focus on designing, synthesizing and characterizing new materials with tailored properties and testing their functionalities. This will involve training of young researchers, transfer of expertise and sharing of advanced equipment via a program of visits and exchanges, networking and collaboration building activities. The proposed hub will be greater than the sum of its parts and will cultivate a community of young researchers who can accelerate the creation of advanced energy materials and sustain collaboration.
期刊论文(10)
专著(0)
科研奖励(0)
会议论文
DOI: 10.1103/prxenergy.1.013007
发表时间: 2022-06
期刊: PRX Energy
影响因子: --
作者: [Yee Wei Foong;Javad Shirani;Shuaishuai Yuan;C. A. Howard;K. Bevan]
通讯作者: Yee Wei Foong;Javad Shirani;Shuaishuai Yuan;C. A. Howard;K. Bevan
DOI: 10.1002/anie.202213982
发表时间: 2023-02-06
期刊: Angewandte Chemie (International ed. in English)
影响因子: --
作者: []
通讯作者:
DOI: 10.1103/physrevb.101.195412
发表时间: 2020-05-07
期刊: PHYSICAL REVIEW B
影响因子: 3.7
作者: [Cuong, N. T., Tateishi, I, Matsuda, I]
通讯作者: Matsuda, I
Non-Destructive X-Ray Imaging of Patterned Delta-Layer Devices in Silicon
硅中图案化 Delta 层器件的无损 X 射线成像
DOI: 10.1002/aelm.202201212
发表时间: 2023
期刊: Advanced Electronic Materials
影响因子: 6.2
作者: [D'Anna N]
通讯作者: D'Anna N
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