Photonics @ Interface: Heterogeneous Integrations for Generation, Detection, Conversion, and Modulation

光子学@接口：用于生成、检测、转换和调制的异构集成

• 批准号: EP/S034242/1
• 负责人: Martin Charlton
• 金额: $ 145.68万
• 依托单位: University of Southampton
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FS034242%2F1
• 关键词: Photonics; Interface; Heterogeneous; Integrations; Generation

We will develop novel photonic devices by bonding two different semiconductor substrates with different spacing between atoms. It was very difficult to ensure an excellent quality at the interface, because the atoms cannot connect perfectly, if the lattice spacing is different. We will overcome this problem by making nano-scale tiny trenches to allow atoms to expand for releasing the strain accumulated at the interface. The quality of the interface is very important to make sure to reduce defects in the atomic scale. We will use the interface for making a highly sensitive detector to identify even just single photon (quantum of light), which is impossible to realise with defects due to the noise from additional carriers created by defects. This detector will be useful for future quantum technologies to enable secure communications and powerful commutations. We will also develop a novel laser and high speed optical switches by using this interface.Our project is summarised as follows:1. Novel Manufacturing Technologies for Enabling Heterogeneous Integrations: We will develop new wafer-scale bonding process technologies to allow excellent interface qualities without defects. Our challenges to overcome the difference of lattice constants and thermal expansion constants for bonded materials. We will accumulate comprehensive knowledge for new bonding techniques. 2. Si/Ge Avalanche-Photo-Diodes and Si/Ge Lasers: The strain engineered interface will enable us to reduce dark currents of Si/Ge Avalanche-Photo-Diodes (APDs) to the level useful for detecting single photons at room temperature. Si/Ge APDs are also useful for LiDAR (Laser Imaging Detection and Ranging). The improved interface quality also enables to achieve lasing of Ge on a Si substrate towards monolithic integrations.3. Si/LiNbO3 Hybrid Optical Modulator and Second-Harmonic-Generators: We will also bond LiNbO3 on a Si substrate, which allows us to utilise the electro-optic and nonlinear effects of LiNbO3, while keeping the advantages of nanoscale patterning of Si. The hybrid optical modulator with a slot waveguide will be operated at attojoule power consumption by removing the 50 Ohm-termination. The hybrid Second-Harmonic-Generators (SHGs) will convert various wavelengths to generate green and UV lights for much denser data-writing on DVDs.We think our approach will establish a new way of making heterogeneous interface with improved quality. Wafer-scale bonding of a patterned substrate is certainly well-known, but the nano-scale patterning to form perfect bonding in atomic-scale has not yet been achieved, yet. We will accumulate comprehensive knowledge on the developed interface, in terms of various physical parameters such as strains, voids, adhesions, and defects for researchers in nanoelectronics and photonics.

我们将通过连接两个原子间距不同的不同半导体衬底来开发新型光子器件。如果晶格间距不同，则很难确保界面处的良好质量，因为原子不能完美连接。我们将通过制造纳米级的微小沟槽来克服这个问题，以允许原子膨胀，从而释放积累在界面上的应变。界面的质量对于确保减少原子尺度的缺陷是非常重要的。我们将使用该接口来制造高灵敏度的探测器，以识别甚至单光子(光的量子)，这是不可能实现的缺陷，因为由缺陷产生的额外载流子的噪声。该探测器将用于未来的量子技术，以实现安全通信和强大的换向。我们还将利用这种接口开发一种新型的激光和高速光开关。我们的项目总结如下：1.支持异质集成的新型制造技术：我们将开发新的晶片规模的键合工艺技术，以实现良好的接口质量和无缺陷。我们的挑战是克服粘结材料的晶格常数和热膨胀常数的差异。我们将为新的粘接技术积累全面的知识。2.Si/Ge雪崩光电二极管和Si/Ge激光器：应变工程界面将使我们能够将Si/Ge雪崩光电二极管(APD)的暗电流降低到有助于在室温下探测单光子的水平。SI/GE APD也可用于激光成像检测和测距(LiDAR)。改进的界面质量也使得在硅衬底上实现Ge的激光朝着单片集成的方向发展。Si/LiNbO_3混合光学调制器和二次谐波产生器：我们还将LiNbO_3键合在硅衬底上，这使我们能够利用LiNbO_3的电光和非线性效应，同时保持硅纳米级图案化的优势。通过去掉50欧姆终端，具有缝隙波导的混合光调制器将工作在阿焦耳功率消耗下。混合二次谐波发生器将转换不同的波长以产生绿光和紫外光，用于在DVD上更密集地写入数据。我们认为我们的方法将建立一种新的方法来制作质量更高的异质接口。图案化衬底的晶片尺度键合是众所周知的，但在原子尺度上形成完美的键合的纳米级图案化还没有实现。我们将为纳米电子学和光子学的研究人员积累关于所开发的界面的各种物理参数方面的全面知识，如应变、空洞、粘合和缺陷。

项目成果

10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

• DOI: 10.3389/fphy.2021.659585
• 发表时间: 2021-05
• 期刊: Palaeogeography, Palaeoclimatology, Palaeoecology
• 作者: J. Byers;K. Debnath;H. Arimoto;M. Husain;M. Sotto;J. Hillier;K. Kiang;D. Thomson;G. Reed;M. Charlton;S. Saito

Novel Si Photonic Waveguides and Applications to Optical Modulators

新型硅光子波导及其在光调制器中的应用

• DOI: 10.23919/moc46630.2019.8982871
• 发表时间: 2019
• 作者: Saito S