C-band quantum-dot lasers on monolithically grown Si platform

单片生长硅平台上的 C 波段量子点激光器

• 批准号: EP/V029681/1
• 负责人: Qiang Li
• 金额: $ 94.81万
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FV029681%2F1
• 关键词: band; quantum; dot; lasers; monolithically

We are living in an increasingly digitalised world where data has become critical to all aspects of human life. Today's data centres are consuming about 3 percent of the global electricity supply and this number is likely to triple in the next decade. Remarkably, more than 50% of the power consumption in high-performance computing and data centres is associated with moving information around, rather than processing it. The current COVID-19 pandemic highlights the importance of healthcare monitoring and remote working using high speed broadband connections. Optical communications is essential to accommodate the need for high speed and bandwidth, while at the same time reducing the power required. In the meantime, 3D imaging and sensing is pushing the next revolution in consumer electronics by facilitating artificial intelligence (AI)-powered devices. LiDAR, or Light Detection and Ranging, is one of the key technologies enabling this market growth with anticipated market share reaching $6 billion by 2024, 70% of which dedicated to automotive applications. From telecommunications to sensing applications, photons have proven to be the most efficient platform. As optical communication is penetrating to shorter and shorter distances and the 3D imaging and sensing expanding across the consumer, automotive, medical and industry/commercial sectors, the photonics manufacturing industry is on the verge of technological advancements. However, high cost, low volume capacity and limited scalability of the photon-based platform has become the bottleneck hindering cutting-edge technologies entering mass production. In this regard, integrating bulky, expensive optical components (the lasers, modulators, amplifiers, detectors and lenses) onto a much affordable and scalable platform like silicon is being much sought after by major industry and academic groups. Over the last six decades, silicon has driven the production of new technologies based on electrons at ever astounding volumes. Looking ahead, the silicon platform can be leveraged as a means to overcome the scalability, manufacturing and system architecture challenges experienced by photonics industry, impacting a range of emerging markets where small form factor, low-cost manufacturing and power efficiency are figures of merit.In this project, we aim to integrate high-performance lasers and amplifiers operating at the strategically important C-band at 1550 nm onto the scalable silicon platform. These devices are one of the most critical components enabling long-haul optical fibre communications, inter-data centre optical interconnect and emerging 3D imaging and sensing technologies including eye-safe LiDAR chips. Leveraging the complementary growth techniques of molecular beam epitaxy (MBE) and metal organic chemical vapour deposition (MOCVD), we will incorporate manufacturable nanostructures as the gain medium to realise advanced devices surpassing state-of-the-art. Several routes will be explored to overcome the challenges in growing these materials and devices onto silicon towards fully integrated photonic platforms, opening up the opportunity for low cost and high volume mass production.

我们生活在一个日益数字化的世界里，数据对人类生活的方方面面都变得至关重要。今天的数据中心消耗的电力约占全球电力供应的3%，这一数字很可能在未来十年增加两倍。值得注意的是，在高性能计算和数据中心中，超过50%的功耗与移动信息有关，而不是处理信息。当前的新冠肺炎疫情突显了使用高速宽带连接进行医疗监测和远程工作的重要性。为了适应对高速和带宽的需求，同时降低所需的功率，光通信是必不可少的。与此同时，3D成像和传感通过促进人工智能(AI)驱动的设备，正在推动消费电子产品的下一次革命。激光雷达，即光探测和测距，是推动这一市场增长的关键技术之一，预计到2024年市场份额将达到60亿美元，其中70%用于汽车应用。从电信到传感应用，光子已被证明是最有效的平台。随着光通信向更短距离的渗透，以及3D成像和传感在消费、汽车、医疗和工业/商业领域的扩展，光电子制造业正处于技术进步的边缘。然而，基于光子的平台成本高、容量小、可扩展性有限，已成为阻碍尖端技术进入量产的瓶颈。在这方面，将体积庞大、价格昂贵的光学部件(激光器、调制器、放大器、探测器和透镜)集成到像硅这样价格实惠、可扩展的平台上，正受到主要行业和学术团体的追捧。在过去的60年里，硅以惊人的数量推动了基于电子的新技术的生产。展望未来，硅平台可以作为一种手段来克服光电子行业所经历的可扩展性、制造和系统架构挑战，影响到一系列外形尺寸小、制造成本低和能效高的新兴市场。在这个项目中，我们的目标是将在具有战略重要性的1550 nm C波段运行的高性能激光器和放大器集成到可扩展的硅平台上。这些设备是实现长途光纤通信、数据中心间光互连以及新兴3D成像和传感技术(包括眼睛安全的LiDAR芯片)的最关键组件之一。利用分子束外延(MBE)和金属有机化学气相沉积(MOCVD)的互补生长技术，我们将结合可制造的纳米结构作为增益介质，实现超越最先进水平的先进器件。将探索几种途径来克服将这些材料和器件生长到硅上以实现完全集成的光子平台的挑战，从而为低成本和大批量大规模生产打开机会。

项目成果

Long-wavelength InAs/InAlGaAs quantum dot microdisk lasers on InP (001) substrate

InP (001) 衬底上的长波长 InAs/InAlGaAs 量子点微盘激光器

• DOI: 10.1063/5.0142391
• 发表时间: 2023
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Jia H

C- and L-band InAs/InP quantum dot lasers

C 和 L 波段 InAs/InP 量子点激光器

• DOI: 10.1109/ipc53466.2022.9975684
• 发表时间: 2022
• 作者: Cao Z