Bandgap engineering for optimal antimony chalcogenide solar cells

最佳锑硫族太阳能电池的带隙工程

• 批准号: EP/W03445X/1
• 负责人: Jonathan Major
• 金额: $ 66.94万
• 依托单位: University of Liverpool
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FW03445X%2F1
• 关键词: Bandgap; engineering; optimal; antimony; chalcogenide

Antimony sulphur-selenide Sb2(S,Se)3 is an emerging material for solar photovoltaics of significant promise. Currently the performance limit is ~10% PCE but theoretical predictions suggest it has the potential to outperform current thin-film market leader CdTe. Sb2(S,Se)3 has two properties we can harness to improve performance: i) the bandgap easily can be tuned from 1.18-1.70eV by variation of the S/Se ratio, ii) it is can readily be doped both n and p-type via extrinsic dopants. These properties allow us to tailor and manipulate the absorber bandgap and/or doping level throughout the absorber material for improved carrier extraction. Importantly this bandgap manipulation can be achieved using a specially designed deposition capability which is a single step, industrially scalable deposition process. The project will develop this approach and link from materials synthesis with controlled doping, to device performance analysis and in-depth materials/interface characterisation. By tracking performance improvements in parallel to materials analysis we can identify and eliminate limitations at every step of the production process. This approach will not only allow us to make better use of the solar spectrum but also overcome the low voltages (< 40% of theoretical limit) which currently restrict Sb2(S,Se)3 device performance. We will achieve this by using designed bandgap grading with profiles to improve carrier lifetimes, reduce interfacial recombination and thereby improve generated voltage. We will also advance the state of the art by using intentional doping of the material via extrinsic dopants whilst in parralel tracking the impact on deep level behaviour and recombination - a radical departure from the current worldwide practice of relying on conductivity from native defects.This project will accelerate the development process to capitalise on a material of huge potential. Our graded bandgap and controllably doped Sb2(S,Se)3 solar cells will open up new market opportunities in low-cost large scale power generation, but the ability to control the bandgap will also deliver opportunities for an expanded product range, such as wider gap devices for applications such as indoor PV (the 'internet of things'), top cells for Si-tandems or flexible devices.

硫硒化锑Sb_2（S，Se）_3是一种具有重要应用前景的新型太阳能光伏材料。目前的性能极限是~ 10%PCE，但理论预测表明，它有可能超过目前薄膜市场的领导者CdTe。Sb 2（S，Se）3具有两种性质，我们可以利用它们来改善性能：i）通过改变S/Se比，可以容易地将带隙从1.18-1.70eV调节，ii）它可以容易地通过非本征掺杂剂掺杂n型和p型。这些性质允许我们定制和操纵整个吸收体材料的吸收体带隙和/或掺杂水平，以改善载流子提取。重要的是，这种带隙操纵可以使用专门设计的沉积能力来实现，该沉积能力是单步的、工业上可扩展的沉积工艺。该项目将开发这种方法，并将材料合成与受控掺杂联系起来，以进行器件性能分析和深入的材料/界面表征。通过跟踪性能改进和材料分析，我们可以在生产过程的每一步识别并消除限制。这种方法不仅使我们能够更好地利用太阳光谱，而且还克服了目前限制Sb 2（S，Se）3器件性能的低电压（<理论极限的40%）。我们将通过使用设计的带隙渐变来实现这一点，以提高载流子寿命，减少界面复合，从而提高产生的电压。我们还将通过使用非本征掺杂剂对材料进行有意掺杂，同时在parralel跟踪对深能级行为和复合的影响，从而推进最新技术水平-这与目前依赖于本征缺陷的导电性的全球实践完全不同。该项目将加速开发过程，以利用具有巨大潜力的材料。我们的渐变带隙和可控掺杂Sb 2（S，Se）3太阳能电池将为低成本大规模发电开辟新的市场机会，但控制带隙的能力也将为扩大产品范围提供机会，例如用于室内PV（“物联网”）等应用的更宽间隙设备，Si串联或柔性设备的顶部电池。

项目成果

Impedance spectroscopy of Sb 2 Se 3 photovoltaics consisting of (Sb 4 Se 6 ) n nanoribbons under light illumination

由 (Sb 4 Se 6 ) n 纳米带组成的 Sb 2 Se 3 光伏电池在光照下的阻抗谱

• DOI: 10.1039/d3nr04082h
• 发表时间: 2023
• 期刊: Nanoscale
• 影响因子: 6.7
• 作者: Park J

Analysis of charge trapping and long lived hole generation in SrTiO 3 photoanodes

SrTiO 3 光阳极中的电荷捕获和长寿命空穴生成分析

• DOI: 10.1039/d3se00886j
• 发表时间: 2023
• 期刊: Sustainable Energy & Fuels
• 影响因子: 5.6
• 作者: Wilson A