Bandgap engineering for optimal antimony chalcogenide solar cells

最佳锑硫族太阳能电池的带隙工程

• 批准号: EP/W03445X/1
• 负责人: Jonathan Major
• 金额: $ 66.94万
• 依托单位: University of Liverpool
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2022
• 资助国家: 英国
• 起止时间: 2022 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FW03445X%2F1
• 关键词: Bandgap; engineering; optimal; antimony; chalcogenide

Antimony sulphur-selenide Sb2(S,Se)3 is an emerging material for solar photovoltaics of significant promise. Currently the performance limit is ~10% PCE but theoretical predictions suggest it has the potential to outperform current thin-film market leader CdTe. Sb2(S,Se)3 has two properties we can harness to improve performance: i) the bandgap easily can be tuned from 1.18-1.70eV by variation of the S/Se ratio, ii) it is can readily be doped both n and p-type via extrinsic dopants. These properties allow us to tailor and manipulate the absorber bandgap and/or doping level throughout the absorber material for improved carrier extraction. Importantly this bandgap manipulation can be achieved using a specially designed deposition capability which is a single step, industrially scalable deposition process. The project will develop this approach and link from materials synthesis with controlled doping, to device performance analysis and in-depth materials/interface characterisation. By tracking performance improvements in parallel to materials analysis we can identify and eliminate limitations at every step of the production process. This approach will not only allow us to make better use of the solar spectrum but also overcome the low voltages (< 40% of theoretical limit) which currently restrict Sb2(S,Se)3 device performance. We will achieve this by using designed bandgap grading with profiles to improve carrier lifetimes, reduce interfacial recombination and thereby improve generated voltage. We will also advance the state of the art by using intentional doping of the material via extrinsic dopants whilst in parralel tracking the impact on deep level behaviour and recombination - a radical departure from the current worldwide practice of relying on conductivity from native defects.This project will accelerate the development process to capitalise on a material of huge potential. Our graded bandgap and controllably doped Sb2(S,Se)3 solar cells will open up new market opportunities in low-cost large scale power generation, but the ability to control the bandgap will also deliver opportunities for an expanded product range, such as wider gap devices for applications such as indoor PV (the 'internet of things'), top cells for Si-tandems or flexible devices.

胰硫硫化苯二甲酸酯SB2（S，SE）3是一种具有巨大前景的太阳能光伏的新兴材料。目前的性能限制为〜10％PCE，但理论上的预测表明，它有可能优于当前薄膜市场领导者CDTE。 SB2（S，SE）3具有我们可以利用的两种属性来提高性能：i）可以通过S/SE比率变化从1.18-1.70EV调整带gap，ii）ii）可以很容易地通过外部掺杂剂对n和p-type掺杂。这些特性使我们能够在整个吸收材料中量身定制和操纵吸收器带隙和/或掺杂水平，以改善载体提取。重要的是，可以使用专门设计的沉积能力来实现此带隙操作，该功能是单一步骤，具有工业可扩展的沉积过程。该项目将开发这种方法，并链接从与受控掺杂的材料合成，设备性能分析和深入的材料/接口表征。通过跟踪与材料分析并行的性能改进，我们可以在生产过程的每个步骤中识别并消除局限性。这种方法不仅可以使我们更好地利用太阳光谱，还可以克服低压（<理论限制的40％），这些电压目前限制了SB2（S，SE）3设备性能。我们将通过使用配置文件使用设计的带隙分级来改善载体寿命，减少界面重组并从而改善产生的电压来实现这一目标。我们还将通过使用外在掺杂剂对材料的故意掺杂来推进艺术的状态，同时跟踪对深层行为和重组的影响 - 与当前全球依赖来自本地缺陷的电导率的实践彻底出发。这将加速发展的开发过程，以资本利用巨大潜力的材料。我们的分级频段盖和可控的掺杂SB2（S，SE）3太阳能电池将在低成本大规模发电中为新的市场机会打开新的市场机会，但是控制频段gap的能力也将为扩展的产品范围提供机会，例如用于扩大的差距设备，用于诸如Intoor PV（互联网的互联网），“互联网”，“ Top the the tos for Si Tandandems”或“ Topsible for Si-Tandandems或Flexible flexibil defeces”。

项目成果

Impedance spectroscopy of Sb 2 Se 3 photovoltaics consisting of (Sb 4 Se 6 ) n nanoribbons under light illumination

由 (Sb 4 Se 6 ) n 纳米带组成的 Sb 2 Se 3 光伏电池在光照下的阻抗谱

• DOI: 10.1039/d3nr04082h
• 发表时间: 2023
• 期刊: Nanoscale
• 影响因子: 6.7
• 作者: Park J

Analysis of charge trapping and long lived hole generation in SrTiO 3 photoanodes

SrTiO 3 光阳极中的电荷捕获和长寿命空穴生成分析

• DOI: 10.1039/d3se00886j
• 发表时间: 2023
• 期刊: Sustainable Energy & Fuels
• 影响因子: 5.6
• 作者: Wilson A