EPSRC-SFI Aluminium-Rich Nitride Electronics (ARNE)

宽带隙（WBG）半导体为电子设备和系统提供了超越硅所能实现的先进功率处理性能的潜力。这源于它们固有的在更高电压下工作的能力，因为它们具有更大的半导体带隙。尽管在WBG技术GaN和SiC的发展方面取得了卓越的进展，但具有更大带隙的新型和新兴材料（所谓的超宽带隙半导体）提供了更大的潜在性能提升。最大限度地提高此类电子元件的高功率处理能力，对于解决我们目前面临的许多能源和环境相关挑战至关重要。例如，需要先进的高功率固态系统来实现智能电网，以实现未来的电力分配和电动汽车的高效电压转换。在高频率下工作的大功率系统也将需要满足未来通信（例如超过6G移动通信）和雷达系统的性能要求。AlGaN是一种新兴的超宽带隙（UWBG）材料，与现有的WBG半导体技术相比，具有在低频率和毫米波频率下提供卓越高功率处理的潜力，同时重要的是提供了与基本成熟的GaN材料平台的集成潜力。与GaN相比，引入铝来生产AlGaN大大增加了带隙，允许大大增加击穿场和更高的电压器件工作，以获得更高的Al成分。然而，将本禀材料从绝缘体转化为半导体所需的AlGaN掺杂比GaN更具挑战性，特别是对于高Al成分。然而，利用类似于GaN器件技术中使用的极化诱导掺杂技术，可能会为实现该材料系统在下一代高功率电子应用中的巨大潜力提供一条途径。在这项工作中，我们将进行材料调查和评估研究，通过材料模拟，设计，生长和表征程序，评估和绘制具有50%至100% Al含量的AlGaN外延层的关键物理和电子材料特性（由此可以实现超越GaN的高功率器件操作潜力方面的最大利益）。这项初步的材料研究将与使用这些最有前途的材料层的场效应晶体管器件的开发相结合并加以补充，以展示初步的器件性能潜力。这项研究的结果将用于i)评估富铝AlGaN的潜力，重点是高功率射频器件应用；ii)确定需要解决的技术挑战，以实现高功率和射频功率应用的潜力；iii)为英国和爱尔兰学术界和工业界建立一个基于富铝AlGaN技术的持续研究和开发战略。

Wide bandgap (WBG) semiconductors offer the potential to deliver electronic devices and systems with advanced power handling performance beyond that achievable in silicon. This stems from their intrinsic ability to operate at higher voltages, as attributed to their larger semiconductor bandgap. Although excellent progress has been made in the development of WBG technologies GaN and SiC, new and emerging materials with even larger bandgap (so called ultra-wide bandgap semiconductors) offer even greater potential performance gains. Maximising the high-power handling capability of such electronic components is essential to address many of the energy and environmental-related challenges that we currently face. For instance, advanced high-power solid-state systems will be required to enable smart power grids for future distribution of electricity and for efficient voltage conversion in electric vehicles. High power systems operating at high frequencies will also be required to meet the performance demands of future communication (e.g. beyond 6G mobile comms) and radar systems. AlGaN is an emerging ultra-wide bandgap (UWBG) material with the potential to deliver superior high-power handling at both low and millimetre wave frequencies than existing WBG semiconductor technologies, while crucially providing integration potential with the largely mature GaN material platform. In contrast to GaN, the introduction of aluminium to produce AlGaN increases the bandgap substantially, allowing for greatly increased breakdown field and even higher-voltage device operation for a higher Al composition. Doping of AlGaN, as required to convert the intrinsic material from an insulator into a semiconductor, is significantly more challenging than GaN however, particularly for higher Al compositions. Exploitation of polarisation-induced doping techniques similar to that used in GaN device technologies may however yield a route to realise the large potential of this material system for next generation high power electronic applications. In this work we will undertake a material investigation and evaluation study to assess and map crucial physical and electronic material properties for AlGaN epitaxial layers with 50% to 100% Al content (whereby the most benefit in terms of high-power device operation potential beyond GaN may be achieved), through a programme of material simulation, design, growth and characterisation. This initial material study will be coupled with and complemented by the development of Field Effect Transistor devices using the most promising of these material layers to demonstrate preliminary device performance potential. The outcomes of this study will be used to i) evaluate the potential of Al-rich AlGaN with a focus on high power RF device applications, ii) identify the technical challenges that need to be addressed to realise this potential for both high power and RF power applications iii) establish an ongoing research and exploitation strategy for UK and Irish academia and industry for Al-rich AlGaN-based technology.