EPSRC-SFI Aluminium-Rich Nitride Electronics (ARNE)

EPSRC-SFI 富铝氮化物电子器件 (ARNE)

• 批准号: EP/X036901/1
• 负责人: David Moran
• 金额: $ 76.18万
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2024
• 资助国家: 英国
• 起止时间: 2024 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FX036901%2F1
• 关键词: EPSRC; SFI; Aluminium; Rich; Nitride

Wide bandgap (WBG) semiconductors offer the potential to deliver electronic devices and systems with advanced power handling performance beyond that achievable in silicon. This stems from their intrinsic ability to operate at higher voltages, as attributed to their larger semiconductor bandgap. Although excellent progress has been made in the development of WBG technologies GaN and SiC, new and emerging materials with even larger bandgap (so called ultra-wide bandgap semiconductors) offer even greater potential performance gains. Maximising the high-power handling capability of such electronic components is essential to address many of the energy and environmental-related challenges that we currently face. For instance, advanced high-power solid-state systems will be required to enable smart power grids for future distribution of electricity and for efficient voltage conversion in electric vehicles. High power systems operating at high frequencies will also be required to meet the performance demands of future communication (e.g. beyond 6G mobile comms) and radar systems. AlGaN is an emerging ultra-wide bandgap (UWBG) material with the potential to deliver superior high-power handling at both low and millimetre wave frequencies than existing WBG semiconductor technologies, while crucially providing integration potential with the largely mature GaN material platform. In contrast to GaN, the introduction of aluminium to produce AlGaN increases the bandgap substantially, allowing for greatly increased breakdown field and even higher-voltage device operation for a higher Al composition. Doping of AlGaN, as required to convert the intrinsic material from an insulator into a semiconductor, is significantly more challenging than GaN however, particularly for higher Al compositions. Exploitation of polarisation-induced doping techniques similar to that used in GaN device technologies may however yield a route to realise the large potential of this material system for next generation high power electronic applications. In this work we will undertake a material investigation and evaluation study to assess and map crucial physical and electronic material properties for AlGaN epitaxial layers with 50% to 100% Al content (whereby the most benefit in terms of high-power device operation potential beyond GaN may be achieved), through a programme of material simulation, design, growth and characterisation. This initial material study will be coupled with and complemented by the development of Field Effect Transistor devices using the most promising of these material layers to demonstrate preliminary device performance potential. The outcomes of this study will be used to i) evaluate the potential of Al-rich AlGaN with a focus on high power RF device applications, ii) identify the technical challenges that need to be addressed to realise this potential for both high power and RF power applications iii) establish an ongoing research and exploitation strategy for UK and Irish academia and industry for Al-rich AlGaN-based technology.

宽带隙（WBG）半导体提供了提供电子设备和系统的潜力，其先进的功率处理性能超过了硅的性能。这源于它们在更高电压下工作的固有能力，这归因于它们更大的半导体带隙。虽然WBG技术GaN和SiC的发展取得了很大进展，但具有更大带隙的新兴材料（所谓的超宽带隙半导体）提供了更大的潜在性能增益。最大限度地提高这些电子元件的高功率处理能力对于解决我们目前面临的许多能源和环境相关挑战至关重要。例如，需要先进的高功率固态系统来实现智能电网，用于未来的电力分配和电动汽车的有效电压转换。还将需要在高频下操作的高功率系统来满足未来通信（例如，超过6G移动的通信）和雷达系统的性能需求。AlGaN是一种新兴的超宽带隙（UWBG）材料，与现有的WBG半导体技术相比，它具有在低频和毫米波频率下提供上级高功率处理的潜力，同时还具有与基本成熟的GaN材料平台集成的潜力。与GaN相比，引入铝以产生AlGaN实质上增加了带隙，从而允许大大增加击穿场，并且对于更高的Al组成甚至更高电压的器件操作。然而，AlGaN的掺杂，如将本征材料从绝缘体转化为半导体所需的，比GaN明显更具挑战性，特别是对于较高的Al成分。然而，开发类似于GaN器件技术中使用的极化诱导掺杂技术可能会产生一种途径，以实现这种材料系统在下一代高功率电子应用中的巨大潜力。在这项工作中，我们将进行材料调查和评估研究，以评估和映射具有50%至100% Al含量的AlGaN外延层的关键物理和电子材料特性（从而可以实现超越GaN的高功率器件操作潜力方面的最大利益），通过材料模拟，设计，生长和表征的程序。这一初步的材料研究将与场效应晶体管器件的开发相结合，并通过使用这些材料层中最有前途的材料层来证明初步的器件性能潜力。这项研究的结果将用于i）评估富铝AlGaN的潜力，重点是高功率RF器件应用，ii）确定需要解决的技术挑战，以实现高功率和RF功率应用的潜力iii）为英国和爱尔兰学术界和工业界建立一个正在进行的研究和开发战略，以丰富AlGaN为基础的技术。