Evaluation of beta-Ga2O3 for high power RF device applications

高功率射频器件应用的 beta-Ga2O3 评估

• 批准号: EP/S03725X/1
• 负责人: David Moran
• 金额: $ 32.46万
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FS03725X%2F1
• 关键词: Evaluation; beta; Ga2O3; power; RF

Wide bandgap (WBG) semiconductors offer the potential to deliver electronic devices and systems with advanced power handling performance beyond that achievable in silicon. This stems from their intrinsic ability to operate at higher voltages as directly attributed to their larger semiconductor bandgap. Although excellent progress has been made in the development of WBG technologies GaN and SiC, new and emerging materials with even larger bandgap (so called ultra-wide bandgap semiconductors) offer even greater potential performance gains. Maximising such high-power handling capability in electronic components is essential to address many of the energy and environmental-related challenges that we currently face. For instance, advanced high-power solid-state systems will be required to enable smart power grids for future distribution of electricity and for efficient voltage conversion in electric vehicles. High power systems operating at high frequencies will also be required to meet the performance demands of future communication (e.g. 5G and 6G mobile comms) and radar systems. Beta-Ga2O3 is an ultra-wide bandgap (UWBG) material with a bandgap even larger than existing WBG technologies, GaN and SiC and hence offers the potential to deliver superior high power performance. Large area beta-Ga2O3 wafers may also be produced using similar processes to silicon, thus offering greater potential for large scale, cost effective manufacture compared to other WBG and UWBG materials. Beta-Ga2O3 is therefore currently in a unique position to meet many of the ever-increasing demands and performance requirements imposed by the continued development of high-power electronic systems. The intrinsic material properties of beta-Ga2O3 also suggest it may be able to operate at high switching speeds, thus allowing for simultaneous high power and high frequency (GHz) operation. Little work has as yet been undertaken however to explore the potential and limitations of beta-Ga2O3 for such radio frequency (RF), high power applications.This work will investigate the potential of beta-Ga2O3 for the production of electronic devices for both high power and high frequency operation. We will undertake a feasibility study utilising commercially sourced beta-Ga2O3 substrates to better understand their physical, chemical and electronic structure and the associated charge transport and electronic device production potential. Utilising previously established expertise in the development of WBG and UWBG device technologies, processing protocols for the creation of beta-Ga2O3 devices such as field effect transistors will be established. Devices with varying geometries (which strongly impact both high power and high frequency operation) will be investigated to maximise understanding of device operation and performance potential. Moving forward, the outputs of this work will be used to identify an ongoing research strategy for beta-Ga2O3 based electronics within the UK in partnership with national academic groups and industry active in complementary areas of WBG and UWBG research.

宽带隙（WBG）半导体提供了提供电子设备和系统的潜力，其先进的功率处理性能超过了硅的性能。这源于它们在更高电压下工作的固有能力，这直接归因于它们更大的半导体带隙。虽然WBG技术GaN和SiC的发展取得了很大进展，但具有更大带隙的新兴材料（所谓的超宽带隙半导体）提供了更大的潜在性能增益。最大限度地提高电子元件的高功率处理能力对于解决我们目前面临的许多能源和环境相关挑战至关重要。例如，需要先进的高功率固态系统来实现智能电网，用于未来的电力分配和电动汽车的有效电压转换。还需要在高频下工作的高功率系统来满足未来通信（例如5G和6 G移动的通信）和雷达系统的性能需求。 Beta-Ga 2 O3是一种超宽带隙（UWBG）材料，其带隙甚至大于现有的WBG技术、GaN和SiC，因此具有提供上级高功率性能的潜力。大面积β-Ga 2 O3晶片也可以使用与硅类似的工艺来生产，因此与其他WBG和UWBG材料相比，提供了更大的大规模、成本有效的制造潜力。因此，Beta-Ga 2 O3目前处于独特的地位，可以满足高功率电子系统持续发展所带来的许多不断增长的需求和性能要求。β-Ga 2 O3的固有材料特性也表明它可能能够以高开关速度工作，从而允许同时进行高功率和高频（GHz）工作。然而，很少有工作已经进行，以探索这种射频（RF），高功率application.This工作的潜力和限制β-Ga 2 O 3的生产的电子器件的高功率和高频操作。我们将利用商业来源的β-Ga 2 O3衬底进行可行性研究，以更好地了解其物理，化学和电子结构以及相关的电荷传输和电子器件生产潜力。利用先前在WBG和UWBG器件技术开发方面建立的专业知识，将建立用于创建β-Ga 2 O3器件（如场效应晶体管）的处理协议。将研究具有不同几何形状（强烈影响高功率和高频操作）的器件，以最大限度地了解器件操作和性能潜力。展望未来，这项工作的成果将被用来确定一个正在进行的研究战略β-Ga 2 O3为基础的电子在英国与国家学术团体和行业积极在WBG和UWBG研究的互补领域的合作伙伴关系。