Ultra short gate length diamond FETs for high power/high frequency applications

适用于高功率/高频应用的超短栅极长度金刚石 FET

• 批准号: EP/E054668/1
• 负责人: David Moran
• 金额: $ 64.54万
• 依托单位: University of Glasgow
• 依托单位国家: 英国
• 项目类别: Fellowship
• 财政年份: 2007
• 资助国家: 英国
• 起止时间: 2007 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FE054668%2F1
• 关键词: Ultra; short; gate; length; diamond

Recent advances in the growth and processing of electronic diamond have provided a glimpse into the potential device performance and applications that this exciting material system can provide. Unique and highly desirable material properties such as large bandgap, high intrinsic mobility and very high thermal conductivity deem diamond the ultimate material for high power/high frequency device realisation. This combined with ultra small feature processing potential, points towards an ultra short gate length FET technology as the obvious choice for the application of such a unique material system. For this work it is proposed that 10nm T-gate diamond FETs be investigated leading to a device technology that can satisfy the expanding demand for high power / high frequency operation. In particular this technology finds application in increasing the source power of Terahertz imaging systems, which currently are of great interest for security and medical imaging applications. This prime goal of the proposed research is accomplishable using high quality diamond material supplied by U.K. based company Element 6 and use of the extensive fabrication and characterisation facilities at the University of Glasgow. In particular, access to the ultra-high resolution capabilities of the recently commissioned Vistek VB6 electron beam lithography tool, provides a direct route to the realisation of such ultra-small dimension devices.

电子金刚石的生长和加工的最新进展为这种令人兴奋的材料系统所能提供的潜在设备性能和应用提供了一瞥。独特和非常理想的材料特性，如大带隙，高固有迁移率和非常高的导热性，使金刚石成为高功率/高频器件实现的最终材料。这与超小型特征处理潜力相结合，指向超短栅极长度场效应管技术作为这种独特材料系统应用的明显选择。在这项工作中，我们提出了10nm t栅极金刚石场效应管的研究，从而导致一种器件技术，可以满足不断扩大的高功率/高频工作需求。特别是该技术在增加太赫兹成像系统的源功率方面的应用，目前对安全和医学成像应用非常感兴趣。这项研究的主要目标是利用英国Element 6公司提供的高质量钻石材料，并利用格拉斯哥大学广泛的制造和表征设施来实现。特别是，最近投入使用的Vistek VB6电子束光刻工具的超高分辨率功能，为实现这种超小尺寸设备提供了直接途径。

项目成果

Thermally Stable, High Performance Transfer Doping of Diamond using Transition Metal Oxides.

• DOI: 10.1038/s41598-018-21579-4
• 发表时间: 2018-02-20
• 期刊: Scientific reports
• 影响因子: 4.6
• 作者: Crawford KG;Qi D;McGlynn J;Ivanov TG;Shah PB;Weil J;Tallaire A;Ganin AY;Moran DAJ
• 通讯作者: Moran DAJ

RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study

• DOI: 10.1109/ted.2015.2392798
• 发表时间: 2015-03-01
• 期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
• 影响因子: 3.1
• 作者: Russell, Stephen;Sharabi, Salah;Moran, David A. J.
• 通讯作者: Moran, David A. J.

Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz

• DOI: 10.1109/led.2012.2210020
• 发表时间: 2012-10-01
• 期刊: IEEE ELECTRON DEVICE LETTERS
• 影响因子: 4.9
• 作者: Russell, Stephen A. O.;Sharabi, Salah;Moran, David A. J.
• 通讯作者: Moran, David A. J.

Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling

通过直流/小信号表征和径向线小信号建模研究氢端金刚石平面肖特基接触中界面层的特性

• DOI: 10.1063/1.4915297
• 发表时间: 2015
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Cappelluti F