Silicon Based Qubits Using Quantum Dot Transistors

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The proposal of a quantum computer has generated a great deal of research in the development of qubit devices. In the proposed research, we investigate the characteristics of utra-small, < 10nm 'point contact' quantum dot transistors that operate at room temperature for the definition of qubits in silicon. While qubits can be implemented in a variety of different systems, silicon based qubits possess specific advantages. Silicon based qubits havebeen shown to produce relatively long decoherence times and have the ability to integrate with CMOS and nano-technoogies. In addition, silicon based qubits can interface with the outside world due to conventional CMOS circuitry. This quality makes qubits in silicon a promising candidate for quantum computation and quantum technologies in general as it allows, not only the development of a purely quantum device, but also allows for the possibility of developinghybrid quantum-classical devices. Moreover, as part of the investigation, we will simulate a variety quantum dot circuits to better understand their behaviour and influence in the formation of qubits. We will also fabricate and measure the characteristics of quantum dot devices that operate at room temperature. Following the fabrication and device measurements, any promising devices will be taken to the University of Cambridge for further testing and measurent of qubit properties, such as, qubit dechorence times. In parallel to this, we will develop a theoretical model that fully describes the energetics of silicon based qubits in quantum dot transistors.