IV-VI Semiconductor Nanosheets for Advanced Optoelectronic Applications

二维材料给材料科学带来了革命性的变化，而石墨烯的学术影响是独一无二的。然而，为了生产先进的光电子器件，未来的2D材料产业也将需要与导电石墨烯兼容的2D半导体。最近在曼彻斯特，我们开始有兴趣解锁用于直接打印油墨的石墨烯以外有用的2D半导体的解决方案加工途径。这个项目将探索其中的一些材料及其设备应用，我们正在寻找一名雄心勃勃的博士生从事这一领域的尖端研究。我们在将层状晶体剥离成2D材料方面拥有丰富的专业知识(例如，Lewis和同事Chem)。Commun、2016、52、7878-7881和化学。交警。50,13338-13341)和我们最近已经证明，锡(II)硫化物(SnS)纳米片可以通过层状Herzenbergite的液相剥离(Lewis&Derby同事，J.Am)在溶液中制备。化学。SoC。2015年、137万、12689)。我们现在寻求在整个1-2 eV能量范围内不断调整带隙的能量。成功的候选人将开发仔细的超声波处理、离心和分级方案，以分离不同厚度的SnS纳米片，从而能够获得特定厚度的定制纳米片，从而获得带隙能量。由于一系列IV-VI半导体(SnSe、GeS、GeSE)也是层状结构，这种方法将被普遍应用于使用自上而下的溶液处理来制备具有可调带隙的量子受限纳米片家族。这将产生一系列有用的半导体纳米片，这些纳米片在光谱范围内具有带隙，可以大量生产，用作可直接打印的墨水。您的实际工作将得到我们德国合作者的理论计算的支持

Two-dimensional materials have revolutionised materials science, and the academic impact of graphene is unique. However to produce advanced optoelectronic devices, a future 2D materials industry will also require 2D semiconductors compatible with conducting graphene. Recently at Manchester we have become interested in unlocking solution processing pathways towards useful 2D semiconductors beyond graphene for direct print inks. This project will explore some of these materials and their device applications and we are seeking an ambitious Ph.D. student to undertake cutting edge research in this area. We have significant expertise in the area of exfoliation of layered crystals into 2D materials (e.g. Lewis and co-workers Chem. Commun., 2016, 52, 7878-7881 and Chem. Commun. 50, 13338-13341) and we have recently demonstrated that tin(II) sulfide (SnS) nanosheets can be produced in solution by the liquid phase exfoliation of layered herzenbergite (Lewis & Derby co-workers, J.Am. Chem. Soc. 2015, 137, 12689) . We now seek to tune the energy of the band gap continually across this entire 1 - 2 eV energy range. The successful candidate will develop careful ultrasonication, centrifugation and fractionation protocols for the isolation of SnS nanosheets of various thicknesses, thus enabling access to 'made to order' nanosheets of a certain thickness and thus band gap energy. As a range of IV-VI semiconductors (SnSe, GeS, GeSe), are also layer structures, this approach will be applied in general to produce the family of quantum confined nanosheets with tuneable bandgaps, using top-down solution processing. This will produce a range of useful semiconductor nanosheets with band gaps across the spectral range that can be produced in copious amounts for use as direct-printable inks. Your practical work will be supported by theoretical calculations from our collaborators in Germany