Integration of Silicon Germanium to a Silicon Photonics Platform
Integration of Silicon Germanium to a Silicon Photonics Platform
批准号:
1921136
负责人:
金额:
$0.0万
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2016
资助国家:
英国
项目状态:
已结题
起止时间:
2016 至 --
中文摘要
点击翻译按钮获取中文摘要
英文摘要
The variety of SiGe compositions commonly target specific applications and most of the methods used to grow compound material only allow to achieve a single composition on a specific layer within an epitaxy process step. A novel epitaxy method based on liquid phase epitaxy (LPE) or rapid melt growth (RMG) gives the unique possibility of more than one SiGe composition across the wafer and makes possible to have more than one type of SiGe based device using just one deposition and one anneal step. The aim of this PhD project is to use the RMG epitaxy method to fabricate waveguide integrated devices such as detector or modulator. It is expected that the RMG process will reduce the defect density and give enough good quality material for the integration. The process development and integration of the RMG method of SiGe on SOI and the fabrication of SiGe waveguides is therefore the target of the currently conducted work.Silicon photonics is currently an expanding platform for the integration of optics and electronic circuits. In a time of increasing demand for faster and more efficient interconnects, the substantial amount of research data available for silicon in electronics facilitates the migration of interconnect technology towards CMOS compatible photonic devices and systemsSilicon germanium is a promising material for such high performance telecommunication devices. Thanks to its physical properties and fabrication methods previously demonstrated using rapid melt growth (RMG) enabling crystal composition engineering, it is possible to design cutting-edge devices with this material.The fabrication process for the integration of the SiGe RMG to SOI to form Si to Ge and SiGe waveguides transition is in progress. Masks have been designed in order to provide enable the waveguide integration process following earlier process development tests. The new integration process being developed is an efficient and fast way to achieve this aim. This report is a review of the project progress throughout the last 8 months of my work as a PhD student at the University of Southampton within Silicon Photonics group.
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Laser-assisted material composition engineering of SiGe planar waveguides
SiGe平面波导的激光辅助材料合成工程
DOI:
--
发表时间:
2017
期刊:
影响因子:
--
作者:
[F. J. Runge]
通讯作者:
F. J. Runge
DOI:
10.1109/group4.2017.8082169
发表时间:
2017-08
期刊:
2017 IEEE 14th International Conference on Group IV Photonics (GFP)
影响因子:
--
作者:
[Tiantian Li;M. Nedeljkovic;N. Hattasan;A. Khokhar;S. Reynolds;S. Stankovic;M. Banakar;W. Cao;Z. Qu;C. Littlejohns;J. S. Penadés;K. Grabska;L. Mastronardi;D. Thomson;F. Gardes;G. Reed;Hequan Wu;Zhiping Zhou;G. Mashanovich]
通讯作者:
Tiantian Li;M. Nedeljkovic;N. Hattasan;A. Khokhar;S. Reynolds;S. Stankovic;M. Banakar;W. Cao;Z. Qu;C. Littlejohns;J. S. Penadés;K. Grabska;L. Mastronardi;D. Thomson;F. Gardes;G. Reed;Hequan Wu;Zhiping Zhou;G. Mashanovich
Silicon-Germanium for photonics applications
用于光子学应用的硅-锗
DOI:
--
发表时间:
2016
期刊:
影响因子:
--
作者:
[K. Grabska]
通讯作者:
K. Grabska
Group IV compounds and silicon nitride for multiplatform integrated photonics
用于多平台集成光子学的 IV 族化合物和氮化硅
DOI:
--
发表时间:
2017
期刊:
影响因子:
--
作者:
[F. Y. Gardes]
通讯作者:
F. Y. Gardes
SiGe compound for compact high speed electroabsorption modulators
用于紧凑型高速电吸收调制器的 SiGe 化合物
DOI:
--
发表时间:
2017
期刊:
影响因子:
--
作者:
[K. Grabska]
通讯作者:
K. Grabska
共 9 条
国内基金
海外基金
Silicon-Tethered 分子内 Corey-Chaykovsky 反应和 Tandem Heterocyclopropylolefin 环化反应研究
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批准号:20802044
-
项目类别:青年科学基金项目
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资助金额:18.0万元
-
批准年份:2008
-
负责人:宋振雷
-
依托单位: