Atomic layer deposited dopant oxide films for doping of germanium and silicon-germanium substrates: Deposition – Flash Lamp Annealing – SIMS metrology

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Within the frame of the proposed research project atomic layer deposition processes of boron oxide, indium oxide, phosphorus oxide, and antimony oxide will be developed and analysed. For these processes germanium and silicon germanium substrates will be used. The grown layers serve as diffusion sources for homogeneous doping of these semiconductor materials. The proposed process is especially useful for doping of three-dimensional surfaces. The SiGe and Ge semiconducting films that will be used for the doping experiments will be epitaxially grown. These structures will be prepared and analysed particularly with regard to the later characterisation of the dopant profiles and the diffusion processes. Drive-in and activation of the dopants will be carried out by flash lamp annealing, which will be extensively investigated and optimised for the purpose of dopant diffusion into SiGe and Ge from atomic layer deposited solid surface layers. Furthermore, metrology investigation in the field of secondary ion mass spectrometry (SIMS) will be carried out in-depth because of its vital importance for the precise analysis of the dopant concentration profiles in the semiconductor materials. The analysis of the aimed steep profiles with high surface concentration of dopants will be scientifically and technically challenging.