Infrared Thermophotovoltaic (TPV) cell for power generation and energy harvesting

用于发电和能量收集的红外热光伏 (TPV) 电池

• 批准号: 2268865
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2268865
• 关键词: Infrared; Thermophotovoltaic; TPV; cell; power

(a) Scientific excellence: Limited energy resources and pressures of global warming require industry to reduce its net-energy or "carbon footprint". Given that >60% of energy in manufacturing is wasted as heat has triggered interest in thermal-energy scavenging for temperatures <1000K and worldwide development of thermophotovoltaic (TPV) devices. As early as 2008, Technology Strategy Board (TSB) and EPSRC invested ~£3M creating TPV R&D consortium (Lancaster) with UK first demonstration of InAs TPVs reported in 2015 (co-author, Kesaria). However, the InAs and subsequent InSb-based devices suffer from severe temperature instabilities and require subsequent cooling rendering these devices net-energy-consuming. Recently, a new compound semiconductor, InN, has been theoretically predicted (2017, MIT) with both thermally-stable crystal structure and spectral response promising robust, un-cooled performance. To date, no diode demonstration has been reported creating a scenario for rich academic exploration/development for PhD study. In support of this studentship, Dr. Kesaria and co-supervisor Prof. Min Gao, are well-placed to explore this opportunity utilising III-N molecular beam epitaxy (MBE), ICS fabrication and Cardiff device and materials characterization facilities. Project aims, methods, outcomes: The studentship aims to demonstrate temperature-stable TPVs with blackbody response ~1000K. The student will develop new methods to grow InN material using MBE then characterise its structure, optical properties by XRD, PL and FTIR in Ser-Cymru laboratory. Following device simulation (Sentaurus, Gao) and doping studies, a p-i-n structure is grown, fabricated into mesa diodes and characterised. Special flash-test I-Vs will check short-circuit and open-voltage enhancement in Prof Gao's lab. Scientific challenges: Breakthrough opportunities include doping studies (InN is intrinsically n-type), diode passivation (surface accumulation at etched-sidewalls) and InN thermally-stable TPV demonstration (first to date).(b)Feasibility of completion within 3.5years: The project has four stages (yr0.0-0.5)literature search, MBE, cleanroom, Sentaurus training (yr0.5-1.5)InN on Si epitaxy, doping studies, TPV modelling (yr1.5-2.5)device development; (yr2.5-3.5)device demonstrations, reporting, viva.

(a)科学卓越：有限的能源资源和全球变暖的压力要求工业减少其净能源或“碳足迹”。鉴于制造业中超过60%的能源被浪费在热量上，因此引发了对温度<1000 K的热能收集和全球热光伏（TPV）设备开发的兴趣。早在2008年，技术战略委员会（TSB）和EPSRC投资约300万英镑创建TPV研发联盟（兰开斯特），并于2015年在英国首次展示InAs TPV（合著者Kesaria）。然而，InAs和随后的基于InSb的器件遭受严重的温度不稳定性，并且需要随后的冷却，使得这些器件消耗净能量。最近，理论上预测了一种新的化合物半导体InN（2017年，MIT），具有热稳定的晶体结构和光谱响应，有望实现稳健的非冷却性能。到目前为止，还没有二极管演示报告为博士研究创造了丰富的学术探索/发展的场景。为了支持这项研究，Kesaria博士和共同导师Min Gao教授能够利用III-N分子束外延（MBE），ICS制造和卡迪夫器件和材料表征设施来探索这一机会。项目目标，方法，成果：学生奖学金的目的是展示温度稳定的TPV与黑体响应~ 1000 K。学生将在Ser-Cymru实验室开发使用MBE生长InN材料的新方法，然后通过XRD，PL和FTIR对其结构，光学性质进行表征。在器件模拟（Sentaurus，Gao）和掺杂研究之后，生长p-i-n结构，将其制造成梅萨二极管并表征。在高教授的实验室里，特殊的闪速测试I-V将检查短路和开路电压的增强。科学挑战：突破性的机会包括掺杂研究（InN本质上是n型），二极管钝化（蚀刻侧壁的表面积累）和InN热稳定TPV演示（迄今为止第一次）。（B）在3.5年内完成的可行性：该项目有四个阶段（0.0 -0.5年）文献检索、分子束外延、洁净室、Sentaurus培训（0.5 -1.5年）硅上氮化铟外延、掺杂研究、TPV建模（1.5 -2.5年）器件开发;（2.5 -3.5年）器件演示、报告、viva。