Infrared Thermophotovoltaic (TPV) cell for power generation and energy harvesting

(a)科学卓越：有限的能源资源和全球变暖的压力要求工业减少其净能源或“碳足迹”。考虑到制造过程中60%的能量被浪费为热量，这引发了人们对温度<1000K的热能清除和全球热光伏（TPV）设备开发的兴趣。早在2008年，技术战略委员会（TSB）和EPSRC就投资了300万英镑创建了冠热管研发联盟（兰开斯特），并于2015年报告了英国首次展示的InAs冠热管（合著者，Kesaria）。然而，InAs和后续基于insb的器件存在严重的温度不稳定性，并且需要后续的冷却，从而使这些器件消耗净能量。最近，一种新的化合物半导体，InN，已经从理论上预测（2017，MIT），具有热稳定的晶体结构和光谱响应，具有强大的非冷却性能。到目前为止，还没有二极管的演示报告为博士研究创造了丰富的学术探索/发展场景。为了支持这项研究，Kesaria博士和共同导师Min Gao教授很好地利用III-N分子束外延（MBE）， ICS制造和卡迪夫设备和材料表征设施来探索这一机会。项目目标、方法、成果：研究黑体响应~1000K的温度稳定TPVs。该学生将开发利用MBE生长InN材料的新方法，然后在Ser-Cymru实验室通过XRD， PL和FTIR表征其结构，光学性质。在器件模拟（Sentaurus, Gao）和掺杂研究之后，p-i-n结构被生长，制造成台面二极管并表征。在高教授的实验室里，特殊的闪光测试i -v将检查短路和开路电压增强。科学挑战：突破机会包括掺杂研究（InN本质上是n型），二极管钝化（蚀刻侧壁表面积累）和InN热稳定TPV演示（迄今为止）。(b) 3.5年内完成的可行性：项目分为四个阶段（yr0 -0.5）文献检索、MBE、洁净室、Sentaurus培训（yr0.5-1.5） Si外延、掺杂研究、TPV建模（yr1.5-2.5）器件开发；（yr2.5-3.5）设备演示，报告，viva。

(a) Scientific excellence: Limited energy resources and pressures of global warming require industry to reduce its net-energy or "carbon footprint". Given that >60% of energy in manufacturing is wasted as heat has triggered interest in thermal-energy scavenging for temperatures <1000K and worldwide development of thermophotovoltaic (TPV) devices. As early as 2008, Technology Strategy Board (TSB) and EPSRC invested ~£3M creating TPV R&D consortium (Lancaster) with UK first demonstration of InAs TPVs reported in 2015 (co-author, Kesaria). However, the InAs and subsequent InSb-based devices suffer from severe temperature instabilities and require subsequent cooling rendering these devices net-energy-consuming. Recently, a new compound semiconductor, InN, has been theoretically predicted (2017, MIT) with both thermally-stable crystal structure and spectral response promising robust, un-cooled performance. To date, no diode demonstration has been reported creating a scenario for rich academic exploration/development for PhD study. In support of this studentship, Dr. Kesaria and co-supervisor Prof. Min Gao, are well-placed to explore this opportunity utilising III-N molecular beam epitaxy (MBE), ICS fabrication and Cardiff device and materials characterization facilities. Project aims, methods, outcomes: The studentship aims to demonstrate temperature-stable TPVs with blackbody response ~1000K. The student will develop new methods to grow InN material using MBE then characterise its structure, optical properties by XRD, PL and FTIR in Ser-Cymru laboratory. Following device simulation (Sentaurus, Gao) and doping studies, a p-i-n structure is grown, fabricated into mesa diodes and characterised. Special flash-test I-Vs will check short-circuit and open-voltage enhancement in Prof Gao's lab. Scientific challenges: Breakthrough opportunities include doping studies (InN is intrinsically n-type), diode passivation (surface accumulation at etched-sidewalls) and InN thermally-stable TPV demonstration (first to date).(b)Feasibility of completion within 3.5years: The project has four stages (yr0.0-0.5)literature search, MBE, cleanroom, Sentaurus training (yr0.5-1.5)InN on Si epitaxy, doping studies, TPV modelling (yr1.5-2.5)device development; (yr2.5-3.5)device demonstrations, reporting, viva.