Integration of Sb-based III-V materials grown directly onto Silicon by MBE

通过 MBE 直接生长在硅上的 Sb 基 III-V 材料的集成

• 批准号: 2586325
• 金额: --
• 依托单位: Lancaster University
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2586325
• 关键词: Integration; Sb; based; III; materials

Modern high-performance optoelectronic devices have widely incorporated III-V semiconductor materials into their structure, especially when operating near the technologically important near-IR and mid-IR spectral ranges. These materials have attracted great interest in many sectors due to their wide range of possible bandgaps, band offsets along with high electron and hole mobilities. Properties which are useful for detectors, photovoltaics and the telecoms laser industry. With respect to lasers, the current technology has hit the limit for efficiency and bandwidth and requires a new approach for growing industrial demands.However direct integration of III-V's onto other III-V substrates such as InAs or GaSb, is not the most effective approach due to the small wafer sizes available and their high cost, bad thermal conductivity and non-optimised surface oxide layers. Integration onto Silicon on the other hand is technologically challenging, but is an important development for large-scale production and implementation of any devices. The large lattice mismatch (~13%) between for example GaSb and Silicon makes this direct epitaxial growth onto Silicon wafers difficult without techniques to manage the internal stresses inside the material in a way that protects the device to be grown on the chip. This work builds upon the pioneering work on the implementation of compound semiconductor optoelectronic devices on Silicon recently developed at Lancaster, and has resulted in one of the lowest reported threading defect densities of GaSb on Si using MBE.

现代高性能光电子器件广泛地将III-V半导体材料融入到其结构中，特别是当工作在具有重要技术意义的近红外和中红外光谱范围时。这些材料由于其可能的带隙、能带偏移以及高的电子和空穴迁移率而在许多领域引起了极大的兴趣。这些特性可用于探测器、光伏和电信激光行业。在激光器方面，目前的技术已经达到了效率和带宽的极限，需要一种新的方法来满足日益增长的工业需求。然而，直接将III-V集成到其他III-V衬底上，如InAs或GaSb，并不是最有效的方法，因为现有的晶片尺寸小，成本高，导热性差，表面氧化层不优化。另一方面，集成到硅上在技术上具有挑战性，但对于任何设备的大规模生产和实施来说都是一个重要的发展。例如，GaSb和硅之间的巨大晶格失配(~13%)使得在没有技术来控制材料内部的内应力以保护器件在芯片上生长的情况下，在硅晶片上进行直接外延生长变得困难。这项工作建立在兰开斯特大学最近开发的在硅上实现化合物半导体光电子器件的开创性工作之上，并利用分子束外延技术在硅上实现了已报道的最低的GaSb穿线缺陷密度之一。