Integration of Sb-based III-V materials grown directly onto Silicon by MBE

通过 MBE 直接生长在硅上的 Sb 基 III-V 材料的集成

• 批准号: 2586325
• 金额: --
• 依托单位: Lancaster University
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2586325
• 关键词: Integration; Sb; based; III; materials

Modern high-performance optoelectronic devices have widely incorporated III-V semiconductor materials into their structure, especially when operating near the technologically important near-IR and mid-IR spectral ranges. These materials have attracted great interest in many sectors due to their wide range of possible bandgaps, band offsets along with high electron and hole mobilities. Properties which are useful for detectors, photovoltaics and the telecoms laser industry. With respect to lasers, the current technology has hit the limit for efficiency and bandwidth and requires a new approach for growing industrial demands.However direct integration of III-V's onto other III-V substrates such as InAs or GaSb, is not the most effective approach due to the small wafer sizes available and their high cost, bad thermal conductivity and non-optimised surface oxide layers. Integration onto Silicon on the other hand is technologically challenging, but is an important development for large-scale production and implementation of any devices. The large lattice mismatch (~13%) between for example GaSb and Silicon makes this direct epitaxial growth onto Silicon wafers difficult without techniques to manage the internal stresses inside the material in a way that protects the device to be grown on the chip. This work builds upon the pioneering work on the implementation of compound semiconductor optoelectronic devices on Silicon recently developed at Lancaster, and has resulted in one of the lowest reported threading defect densities of GaSb on Si using MBE.

现代高性能光电器件已广泛将 III-V 族半导体材料纳入其结构中，特别是在技术重要的近红外和中红外光谱范围附近工作时。这些材料由于其可能的带隙、带偏移范围以及高电子和空穴迁移率而引起了许多领域的极大兴趣。这些特性对于探测器、光伏和电信激光行业非常有用。就激光器而言，当前的技术已经达到了效率和带宽的极限，需要一种新的方法来满足不断增长的工业需求。然而，由于可用的晶圆尺寸小、成本高、导热性差和未优化的表面氧化层，将 III-V 族直接集成到其他 III-V 衬底（如 InAs 或 GaSb）上并不是最有效的方法。另一方面，集成到硅上在技术上具有挑战性，但对于任何设备的大规模生产和实施来说都是一个重要的发展。例如，GaSb 和硅之间存在较大的晶格失配（~13%），如果没有以保护芯片上生长的器件的方式管理材料内部应力的技术，则很难在硅晶圆上直接外延生长。这项工作建立在兰卡斯特最近开发的在硅上实现化合物半导体光电器件的开创性工作的基础上，并导致使用 M​​BE 实现了硅上 GaSb 螺纹缺陷密度最低的报道之一。