How Semi-Conductor Lasers Fail - Modelling Defect Effects

半导体激光器如何失效 - 模拟缺陷效应

• 批准号: 2588444
• 金额: --
• 依托单位: University of Warwick
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2021
• 资助国家: 英国
• 起止时间: 2021 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2588444
• 关键词: How; Semi; Conductor; Lasers; Fail

If a dislocation is present in a light emitting device, it causes failure by acting as a carrier recombination pathway and grows through the material by emitting atoms, eventually shutting of all luminescence. This is a long-standing and significant problem for industrial applications; however, despite the significant technological progress improved knowledge would generate, the atomistic mechanisms underlying recombination-enhanced dislocation climb and its interaction with vacancies and interstitials are poorly understood, with no first principles work reported to date. This PhD project will address this deficiency for the first time using simulation methods that combine quantum mechanical (QM) calculations with machine learning.

如果发光器件中存在位错，则其通过充当载流子复合路径而导致失效，并且通过发射原子而穿过材料生长，最终关闭所有发光。这是一个长期存在的和重要的问题，工业应用;然而，尽管重大的技术进步，改进的知识会产生，原子机制的复合增强位错攀移及其相互作用的空位和杂质知之甚少，没有第一原理的工作报告日期。这个博士项目将首次使用将联合收割机量子力学（QM）计算与机器学习相结合的模拟方法来解决这一缺陷。