Fabrication of wide band gap semi-conductor materials based on amorphous carbon and development of new electronic devices

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The objective of this study is to establish a method for fabricating novel wide gap semiconductor films based on amorphous carbon. Nitrogen and boron atoms could be incorporated in amorphous carbon films by plasma-CVD method using liquid carbon sources. These nitrogen-incorporated and boron-incorporated films showed n-type and p-type semi-conductivity, respectively. The carrier densities could be varied from 3. 24×10^<14> cm^<-3> to 1. 29×10^<19> cm^<-3>. Optical gaps of these films were quite low(0. 655-0. 507 eV). Then, Si atoms were added to N-doped amorphous carbon up to 25 atom%. Resulting films exhibited higher optical gap(ca. 1. 7 eV). The carrier density and mobility were 4. 789×1014 cm^<-3> and 0. 2981 cm^<2> V^<-1> s^<-1>, respectively. In photoelectrochemical measurement, the photocurrent of 153μA cm^<-2> was observed under Xenon? lamp illumination(11. 8 W m^<-2>). The value was close to that of TiO_2 thin films. The quantum yield was 4. 87%. It was concluded that high performance semi-conductive thin films of which incident photon-to-current conversion efficiency is equivalent to TiO_2 could be successfully synthesized.