Integrated quantum devices based on ion-implanted semiconductors.

基于离子注入半导体的集成量子器件。

• 批准号: 2597681
• 金额: --
• 依托单位: University of Strathclyde
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2021
• 资助国家: 英国
• 起止时间: 2021 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2597681
• 关键词: Integrated; quantum; devices; based; ion

The ability to introduce alien atomic species into microscopic regions of a semiconductor material, a technique widely known as doping, has been the cornerstone for the build-up of modern integrated electronics. In fact, this is how the electrical conductivity of semiconductors is locally controlled through ion implantation. However, during the implantation process, high energy collisions between these dopants and the semiconductor target can generate significant crystal damage. Although this may be a problem for the reliability of electronic chips, it has been shown that some atomic defects have very interesting physical properties and lend themselves to the realisation of quantum devices. In other cases, the ions themselves have quantum properties that can be used for developing quantum technologies. Formidable examples are 1) the atomic defects created by the implantation of C atoms in silicon carbide (SiC), which are spinactive and luminescent. 2) transition metal ions in SiC that are spin active and emit in the telecom band suitable for optical fibre transmission 3) Phosphorus and Boron ions in silicon that host quantum bits of the highest quality among solid state systems. In this project, the student will be involved in designing, manufacturing and characterising quantum devices based on implanted ions. In order to improve the reliability and yield of these electronic systems, they will be studied both electrically and optically with a compare and contrast approach. There will be the opportunity to explore different types of ions and host semiconductors to cater for applications in quantum computing as well as sensing and metrology. The research activities will balance device design and modelling, hands-on cleanroom fabrication, as well as electrical and optical experimental measurements with cryogenic set-ups. The student will be involved in making and characterising devices that span from metaloxide-semiconductor nano-capacitors to superconductive microwave resonators and LEDs, in order to couple spins to electromagnetic radiation.

将外来原子物种引入半导体材料微观区域的能力（一种广泛称为掺杂的技术）一直是现代集成电子技术发展的基石。事实上，这就是如何通过离子注入局部控制半导体的导电性。然而，在注入工艺期间，这些掺杂剂与半导体靶之间的高能碰撞可产生显著的晶体损伤。虽然这可能是电子芯片可靠性的一个问题，但已经表明，一些原子缺陷具有非常有趣的物理性质，并有助于实现量子器件。在其他情况下，离子本身具有量子特性，可用于开发量子技术。有力的例子是1）通过在碳化硅（SiC）中注入C原子而产生的原子缺陷，其是自旋活性的和发光的。2)SiC中的过渡金属离子，其是自旋活性的并且在适合于光纤传输的电信频带中发射3）硅中的磷和硼离子，其在固态系统中承载最高质量的量子比特。在这个项目中，学生将参与设计，制造和表征基于注入离子的量子器件。为了提高这些电子系统的可靠性和成品率，将采用比较和对比的方法对它们进行电学和光学方面的研究。将有机会探索不同类型的离子和主体半导体，以满足量子计算以及传感和计量学的应用。研究活动将平衡设备设计和建模，动手洁净室制造，以及电气和光学实验测量与低温设置。学生将参与制造和表征从金属氧化物半导体纳米电容器到微波谐振器和LED的设备，以便将自旋耦合到电磁辐射。