Integrated quantum devices based on ion-implanted semiconductors.
Integrated quantum devices based on ion-implanted semiconductors.
批准号:
2597681
负责人:
金额:
$0.0万
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2021
资助国家:
英国
项目状态:
未结题
起止时间:
2021 至 --
中文摘要
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英文摘要
The ability to introduce alien atomic species into microscopic regions of a semiconductor material, a technique widely known as doping, has been the cornerstone for the build-up of modern integrated electronics. In fact, this is how the electrical conductivity of semiconductors is locally controlled through ion implantation. However, during the implantation process, high energy collisions between these dopants and the semiconductor target can generate significant crystal damage. Although this may be a problem for the reliability of electronic chips, it has been shown that some atomic defects have very interesting physical properties and lend themselves to the realisation of quantum devices. In other cases, the ions themselves have quantum properties that can be used for developing quantum technologies. Formidable examples are 1) the atomic defects created by the implantation of C atoms in silicon carbide (SiC), which are spinactive and luminescent. 2) transition metal ions in SiC that are spin active and emit in the telecom band suitable for optical fibre transmission 3) Phosphorus and Boron ions in silicon that host quantum bits of the highest quality among solid state systems. In this project, the student will be involved in designing, manufacturing and characterising quantum devices based on implanted ions. In order to improve the reliability and yield of these electronic systems, they will be studied both electrically and optically with a compare and contrast approach. There will be the opportunity to explore different types of ions and host semiconductors to cater for applications in quantum computing as well as sensing and metrology. The research activities will balance device design and modelling, hands-on cleanroom fabrication, as well as electrical and optical experimental measurements with cryogenic set-ups. The student will be involved in making and characterising devices that span from metaloxide-semiconductor nano-capacitors to superconductive microwave resonators and LEDs, in order to couple spins to electromagnetic radiation.
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