Characterising GaN transistors using contactless probes

在无线通信系统、运输电气化和可穿戴技术的商业发展的推动下，半导体晶体管已经达到了前所未有的复杂程度。每个晶体管都形成了相互作用的微型结构的复杂网络。众所周知，晶体管中的每个部分都将受到独特的电气条件的影响。然而，晶体管的测量集中在所有这些结构的共同和平均电流和电压上。因此，晶体管的最佳运行并不考虑晶体管本身的变化条件。本项目的目的是克服对不同晶体管元件如何通过实际数据表现的信息和理解的根本缺乏。为了实现其目标，该项目将研究使用磁探针来感测磁探针和电探针，这些磁探针和电探针可以在半导体晶体管上扫描，以获得现有配电电流和电压波形的定量高分辨率图像。该项目的主要目标是建立新的技术来感测和量化化合物半导体器件在大范围频率（高达100GHz）上的电磁近场，然后从实际数据中对分布式晶体管结构如何影响其频率响应进行基本了解。

Driven by commercial evolutions of wireless communication systems, electrification of transport, and wearable technology, semiconductor transistors have reached unprecedented complexity levels. Each transistor forms a complex mesh of miniature structures that are interacting with each other. It is well known that each part within the transistor will be subject to a unique electrical condition. Yet the measurement of transistors focuses on the common and averaged currents and voltages of all these structures together. Consequently, the optimum operation of transistors does not consider the varying conditions within the transistor itself.The purpose of this project is to overcome the fundamental lack of information and understanding on how the different transistor elements behave through actual data. To achieve its goals the project will investigate the use of miniaturised probes to sense the magnetic and electric probes that can be scanned across semiconductor transistors to obtain a quantitative high-resolution image of the existing distribution currents and voltage waveforms. The key objective within this project is to establish new techniques to sense and quantify the electric and magnetic near fields across a compound semiconductor device over a large range of frequencies (up to 100GHz) and then develop from actual data a fundamental understanding on how distributed transistor structures impact their frequency response.