Silicon Carbide Power Conversion for Telecommunications Satellite Applications - 1=Microelectronic device technology 2 = ICT Manufacturing the future

Viren将从事EPSRC新资助的项目“通信卫星应用的碳化硅功率转换”，项目号为EP/V000543/1。该项目旨在开发由宽带隙半导体碳化硅制成的功率电子晶体管和二极管，这些晶体管和二极管能够在太空中运行，因为辐射可能会破坏它们的运行。所谓的抗辐射功率器件尚未在SiC中得到很好的研究，尽管硅和氮化镓中存在这样的例子。Viren的具体作用将是对设备进行辐射测试。一旦这些设备在洁净室中设计和制造完成，他将与比利时的项目合作伙伴UCLouvain合作，在回旋加速器中对其进行测试，回旋加速器可以重现它们将经历的辐射条件。Viren将花一部分时间（最多一年在比利时工作，其余时间在沃里克工程学院工作）。

Viren will work on the newly funded EPSRC project "Silicon Carbide Power Conversion for Telecommunications Satellite Applications", project number EP/V000543/1. The project aims to develop power electronic transistors and diodes made of wide bandgap semiconductor silicon carbide, that are capable of operating in space, where radiation can disrupt their operation. So-called radiation-hard power devices have not yet been well studied in SiC, though examples exist in silicon and gallium nitride. Viren's specific role will be in the radiation testing of the devices. Once the devices have been designed and fabricated in the cleanroom, he will work with project partners UCLouvain in Belgium to test them in their cyclotron, which can reproduce the radiation conditions they will undergo. Viren will spend part of his time (up to one year working in Belgium, the rest based in the School of Engineering at Warwick.