Quantum devices based on silicon carbide transistors

基于碳化硅晶体管的量子器件

• 批准号: 2620026
• 金额: --
• 依托单位: University of Strathclyde
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2021
• 资助国家: 英国
• 起止时间: 2021 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2620026
• 关键词: Quantum; devices; based; silicon; carbide

Unbreakable cryptography, teleportation of information and ultra-fast computing will soon cease to be figments of science fiction literature. These are now considered imminent realities enabled by the upbringing of quantum technologies [1]. Devices that exploit the laws of quantum physics are developing quickly and many materials are presently under scrutiny to build the future quantum hardware [2-3]. This project will investigate quantum effects in silicon carbide (SiC), a wide-bandgap compound semiconductor made of silicon and carbon. The aim of the studentship will be the development of device and testing technologies to electrically probe quantum defects in the semiconductor crystal [4-5]. A central aspect will be the prototyping of novel single-charge and single-spin electronics useful for quantum computing and quantum sensing. This project also aims at enabling large integration and scalability of SiC quantum devices, unlocking their commercial viability.The research activities will balance device design and modelling, hands-on cleanroom fabrication, as well as electrical measurements at cryogenic temperatures. The student will be involved in making and characterising devices that span from metal-oxide-semiconductor nano-capacitors to LEDs and field-effect transistors. [1] The European Quantum Flagship https://qt.eu[2] T.D. Ladd et al. Nature 464, 45 (2010)[3] D.D. Awschalom et al. Science 339, 1174 (2013) [4] A. Lohrmann et al. Rep. Prog. Phys. 80, 034502 (2017)[5] M. Atature et al. Nature Reviews Materials 3, 38 (2018)

牢不可破的密码学、信息的瞬间传送和超高速计算将很快不再是科幻文学的虚构。由于量子技术的发展，这些现在被认为是迫在眉睫的现实。利用量子物理定律的设备正在迅速发展，许多材料目前正在审查中，以构建未来的量子硬件[2-3]。该项目将研究碳化硅（SiC）中的量子效应，碳化硅是一种由硅和碳制成的宽带隙化合物半导体。该学生的目标将是开发器件和测试技术，以电探测半导体晶体中的量子缺陷[4-5]。一个核心方面将是对量子计算和量子传感有用的新型单电荷和单自旋电子学的原型。该项目还旨在实现SiC量子器件的大规模集成和可扩展性，解锁其商业可行性。研究活动将平衡设备的设计和建模，动手洁净室制造，以及低温下的电气测量。该学生将参与制作和表征从金属氧化物半导体纳米电容器到led和场效应晶体管的器件。[1]欧洲量子旗舰https://qt.eu[2] T.D. Ladd等。自然学报，45(2010)[10]。科学通报，2013,32(4):481 - 481。众议员掠夺。[j] .自然科学学报，2016,33(5):551 - 551。自然评论材料3,38 （2018）