Development of ultrawide bandgap deep UV photodetectors
Development of ultrawide bandgap deep UV photodetectors
批准号:
2902113
负责人:
金额:
$0.0万
依托单位:
依托单位国家:
英国
项目类别:
Studentship
财政年份:
2024
资助国家:
英国
项目状态:
未结题
起止时间:
2024 至 --
中文摘要
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英文摘要
Optoelectronics is the study and application of light-emitting or light-detecting devices. The project aims to understand the physical properties of compound semiconductor material gallium oxide and contribute toward the progress of state-of-the-art gallium oxide optoelectronics. This project aims to develop cost-effective, high-performance deep ultraviolet (UV) detection technologies based on gallium oxide materials. To achieve this, the PhD student will work in partnership with thin-film growers, process engineers, semiconductor device physicists, and engineers at Cardiff University. The PhD student will perform basic materials characterisation and develop novel fabrication and testing methods for producing a new class of deep UV detectors. The research group at Cardiff has a dedicated materials characterisation such as optical spectroscopy, electron microscopy and fabrication facility. The project will provide the student with a wide range of training and knowledge in the fabrication, characterisation and testing of gallium oxide-based optoelectronic materials and devices.
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