Development of ultrawide bandgap deep UV photodetectors

超宽带隙深紫外光电探测器的研制

• 批准号: 2902113
• 金额: --
• 依托单位: CARDIFF UNIVERSITY
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2024
• 资助国家: 英国
• 起止时间: 2024 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2902113
• 关键词: Development; ultrawide; bandgap; deep; UV

Optoelectronics is the study and application of light-emitting or light-detecting devices. The project aims to understand the physical properties of compound semiconductor material gallium oxide and contribute toward the progress of state-of-the-art gallium oxide optoelectronics. This project aims to develop cost-effective, high-performance deep ultraviolet (UV) detection technologies based on gallium oxide materials. To achieve this, the PhD student will work in partnership with thin-film growers, process engineers, semiconductor device physicists, and engineers at Cardiff University. The PhD student will perform basic materials characterisation and develop novel fabrication and testing methods for producing a new class of deep UV detectors. The research group at Cardiff has a dedicated materials characterisation such as optical spectroscopy, electron microscopy and fabrication facility. The project will provide the student with a wide range of training and knowledge in the fabrication, characterisation and testing of gallium oxide-based optoelectronic materials and devices.

光电子学是研究和应用发光或探测光的器件。该项目旨在了解化合物半导体材料氧化镓的物理性质，并为最先进的氧化镓光电子学的进步做出贡献。该项目旨在开发基于氧化镓材料的高性价比、高性能深紫外（UV）检测技术。为了实现这一目标，这位博士生将与卡迪夫大学的薄膜种植者、工艺工程师、半导体器件物理学家和工程师合作。该博士生将进行基本材料表征，并开发新的制造和测试方法，以生产新型深紫外探测器。卡迪夫的研究小组拥有专门的材料表征，如光谱学，电子显微镜和制造设施。该项目将为学生提供有关氧化镓基光电材料和器件的制造、表征和测试方面的广泛培训和知识。