Hydrogen in the Ultrawide Bandgap Semiconductor beta-Ga203

非技术描述：带隙大于氮化镓和碳化硅的半导体是一类新型的超宽带隙电子材料，适用于高功率、深紫外光和极端环境应用。尽管超宽带隙半导体在器件应用方面具有巨大的潜力，与由更传统的半导体制成的器件相比，改进了几个数量级，但人们对其电学性质的基本机制知之甚少。该项目特别关注氧化镓，这是一种禁带宽度为4.9 eV的半导体氧化物，是一种具有吸引力的高功率器件候选材料。尽管氧化镓的应用前景广阔，但仍未得到充分开发，影响其电学性能的缺陷和杂质仍存在争议，这为影响技术的基础研究打开了令人兴奋的机会。氢杂质及其化学反应强烈影响氧化镓的电子性质，因此对该项目特别感兴趣。对氧化镓中缺陷和杂质的实验研究为学生提供了解决材料物理重要问题的绝佳机会，激发了他们在科学和工程领域取得成功的兴奋之情。在本项目中，扩大了对物理学中代表性不足的群体的招生。技术描述：本项目重点是对氧化镓中氢杂质的实验研究，氧化镓是一种超宽禁带宽度为4.9 eV的半导体氧化物。在氧化物半导体中，氢是一种重要的杂质，在氧化物半导体中，氢可以产生n型电导，也可以补偿深度受主。虽然对氧化镓中氢的性质有一些理论预测，但这方面的研究还处于初级阶段。氧化镓有望表现出新的行为，并揭示新的缺陷物理。这项研究涉及一套补充的实验方法，旨在确定氢杂质如何影响氧化镓的电子性质，并验证理论预测。例如，振动光谱和自由载流子吸收的结合为研究氢中心提供了一个强有力的策略，它将特定的缺陷与它们引起的导电性联系起来。此外，我们还研究了氢与其他缺陷如镓空位的相互作用，以探讨氢对这些深受主的钝化作用。拉曼散射和光热电离光谱的加入提供了更多类型的氢物种的途径，这些氢物种没有红外吸收线(如分子氢)，但在影响氧化镓的导电性和热稳定性的缺陷反应中发挥着重要作用。这项研究的预期结果是基本了解哪些氢中心是氧化镓中的n型掺杂，并调查氢如何与其他也影响电子性质的缺陷相互作用。需要了解这些缺陷及其反应的基础科学，以便能够可靠地控制和设计氧化镓的导电性。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

Nontechnical description: Semiconductors with bandgaps larger than those of gallium nitride and silicon carbide are emerging as a new class of ultra-wide-bandgap electronic materials for high-power, deep-ultraviolet, and extreme-environment applications. Despite the tremendous potential of the ultra-wide-bandgap semiconductors for device applications, with orders of magnitude improvement over devices made from more conventional semiconductors, the fundamental underlying mechanisms of their electrical properties are poorly understood. This project is focused particularly on gallium oxide, a semiconducting oxide with a bandgap of 4.9 eV, that is an attractive candidate for high-power devices. In spite of its promising applications, gallium oxide remains underexplored, and the defects and impurities that affect its electrical properties remain controversial, opening exciting opportunities for fundamental research that impacts technology. Hydrogen impurities and their chemical reactions strongly affect the electronic properties of gallium oxide and are of particular interest in this project. Experimental studies of defects and impurities in gallium oxide provide an excellent opportunity for students to solve important problems in materials physics, igniting excitement that leads to a successful career in science and engineering. The recruiting of students from groups that are under-represented in physics is expanded in the present project.Technical description: This project is focused on experimental investigation of the hydrogen impurity in gallium oxide, a semiconducting oxide with an ultra-wide bandgap of 4.9 eV. Hydrogen is an important impurity in oxide semiconductors where it can give rise to n-type conductivity and can also compensate deep acceptors. While there are a few theoretical predictions for the properties of hydrogen in gallium oxide, the research in this area is in its infancy. Gallium oxide promises to show new behaviors and to reveal new defect physics. The research involves a complementary set of experimental methods, aiming to determine how hydrogen impurities affect the electronic properties of gallium oxide and to test the theoretical predictions. For example, the combination of vibrational spectroscopy with free-carrier absorption provides a powerful strategy for studying hydrogen centers that relates specific defects with the conductivity they cause. Furthermore, the interactions of hydrogen with other defects such as gallium vacancy are investigated to probe the passivation of these deep acceptors by hydrogen. The addition of Raman scattering and photo-thermal ionization spectroscopies provide access to additional types of hydrogen species that do not have infrared absorption lines (such as molecular hydrogen) but that, nonetheless, play an important role in defect reactions that affect the conductivity of gallium oxide and its thermal stability. The expected outcome of this research is fundamental understanding of which hydrogen centers are n-type dopants in gallium oxide and investigates how hydrogen interacts with other defects that also affect electronic properties. The fundamental science of these defects and their reactions needs to be understood so that the conductivity of gallium oxide can be reliably controlled and engineered.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.