Transforming Net Zero with Ultrawide Bandgap Semiconductor Device Technology (REWIRE)
Transforming Net Zero with Ultrawide Bandgap Semiconductor Device Technology (REWIRE)
批准号:
EP/Z531091/1
负责人:
Martin Kuball
金额:
$1497.04万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2024
资助国家:
英国
项目状态:
未结题
起止时间:
2024 至 --
中文摘要
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英文摘要
Co-created and delivered with industry, REWIRE will accelerate the UK's ambition for net zero by transforming the next generation of high voltage electronic devices using wide/ultra-wide bandgap (WBG/UWBG) compound semiconductors. Our application-driven, collaborative research programme and training will advance the next generation of semiconductor power device technologies to commercialisation and enhance the security of the UK's semiconductor supply-chain.Power devices are at the centre of all power electronic systems. WBG/UWBG compound semiconductor devices pave the way for more efficient and compact power electronic systems, reducing energy loss at the power systems level. The UK National Semiconductor Strategy recognises advances in these technologies and the technical skills required for their development and manufacture as essential to supporting the growing net zero economy.REWIRE's philosophy is centred on cycles of use cases co-created with industry and stakeholders, meeting market needs for devices with increased voltage ranges, maturity and reliability. We will develop multiple technologies in parallel from a range of initial TRL to commercialisation.Initial work will focus on three use cases co-developed with industry, for transformative next generation WBG/UWBG semiconductor power electronic devices: (1) Wind energy, HVDC networks (>10 kV) - increased range high voltage devices as the basis for enabling more efficient power conversion and more compact power converters; (2) High temperature applications, device and packaging - greatly expanded application ranges for power electronics; (3) Tools for design, yield and reliability - improving the efficiency of semiconductor device manufacture.These use cases will: improve higher TRL Silicon Carbide (SiC) 1-2kV technology towards higher voltages; advance low TRL devices such as Gallium Oxide (Ga2O3) and Aluminium Gallium Nitride (AlGaN), diamond and cubic Boron Nitride (c-BN) towards demonstration and ultimately commercialisation; and develop novel heterogenous integration techniques, either within a semiconductor chip or within a package, for enhanced functionality. Use cases will have an academic and industry lead, fostering academia-industry co-development across different work packages.These initial, transformative REWIRE technologies will have wide-ranging applications. They will enhance the efficient conversion of electricity to and from High Voltage Direct Current (HVDC) for long-distance transfer, enabling a sustainable national grid with benefits including more reliable and secure communication systems. New technologies will also bring competitive advantage to the UK's strategically important electric vehicle and battery sectors, through optimised efficiency in charging, performance, energy conversion and management.New use cases will be co-developed throughout REWIRE, with our >30 industrial and policy partners who span the full semiconductor device supply chain, to meet stakeholder priorities.Through engagement with suppliers, manufacturers, and policymakers, REWIRE will pioneer advances in semiconductor supply chain management, developing supply chain tools for stakeholders to improve understanding of the dynamics of international trade, potential supply disruptions, and pricing volatilities. These tools and our Supply Chain Resilience Guide will support the commercialisation of technologies from use cases, enabling users to make informed decisions to enhance resilience, sustainability, and inclusion.Equity, Diversity, and Inclusivity (EDI) are integral to REWIRE's ambitions. Through extensive collaboration across the academic and industrial partners, we will build the diverse, skilled workforce needed to accelerate innovation in academia and industry, creating resilient UK businesses and supply chains.
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Ultrawide Bandgap AlGaN Power Electronics - Transforming Solid-State Circuit Breakers (ULTRAlGaN)
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批准号:EP/X035360/1
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项目类别:Research Grant
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资助金额:$678.7万
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财政年份:2024
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负责人:Martin Kuball
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ECCS-EPSRC - Advanced III-N Devices and Circuit Architectures for mm-Wave Future-Generation Wireless Communications
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Boron-based semiconductors - the next generation of high thermal conductivity materials
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批准号:EP/W034751/1
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项目类别:Research Grant
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资助金额:$31.28万
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财政年份:2023
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负责人:Martin Kuball
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依托单位:
Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics
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批准号:EP/X015882/1
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资助金额:$25.67万
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财政年份:2023
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负责人:Martin Kuball
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依托单位:
FINER: Future thermal Imaging with Nanometre Enhanced Resolution
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批准号:EP/V057626/1
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项目类别:Research Grant
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资助金额:$88.06万
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财政年份:2022
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负责人:Martin Kuball
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依托单位:
Materials and Devices for Next Generation Internet (MANGI)
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批准号:EP/R029393/1
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项目类别:Research Grant
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资助金额:$185.85万
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财政年份:2018
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负责人:Martin Kuball
-
依托单位:
Sub-micron 3-D Electric Field Mapping in GaN Electronic Devices
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批准号:EP/R022739/1
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项目类别:Research Grant
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资助金额:$92.77万
-
财政年份:2018
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负责人:Martin Kuball
-
依托单位:
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
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批准号:EP/P00945X/1
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项目类别:Research Grant
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资助金额:$551.14万
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财政年份:2017
-
负责人:Martin Kuball
-
依托单位:
Quantitative non-destructive nanoscale characterisation of advanced materials
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批准号:EP/P013562/1
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项目类别:Research Grant
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资助金额:$18.03万
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财政年份:2017
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负责人:Martin Kuball
-
依托单位:
High Performance Buffers for RF GaN Electronics
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批准号:EP/N031563/1
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项目类别:Research Grant
-
资助金额:$96.85万
-
财政年份:2016
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负责人:Martin Kuball
-
依托单位:
GaN Electronics: RF Reliability and Degradation Mechanisms
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批准号:EP/K026232/1
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项目类别:Research Grant
-
资助金额:$68.85万
-
财政年份:2014
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负责人:Martin Kuball
-
依托单位:
Novel High Thermal Conductivity Substrates for GaN Electronics: Thermal Innovation
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批准号:EP/K024345/1
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项目类别:Research Grant
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资助金额:$50.1万
-
财政年份:2013
-
负责人:Martin Kuball
-
依托单位:
Novel Sub-Threshold Methodologies for GaN Electronic Devices: A Study of Device Reliability and Degradation Mechanisms
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批准号:EP/I033165/1
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项目类别:Research Grant
-
资助金额:$52.84万
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财政年份:2011
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负责人:Martin Kuball
-
依托单位:
Development of an integrated optical E-Probe for GaN power transistor reliability analysis
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批准号:EP/H037853/1
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项目类别:Research Grant
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资助金额:$38.86万
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财政年份:2010
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负责人:Martin Kuball
-
依托单位:
Novel Thermal Management of Power Electronic Devices: High Power High Frequency Planar Gunn Diodes
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批准号:EP/H011366/1
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项目类别:Research Grant
-
资助金额:$35.72万
-
财政年份:2010
-
负责人:Martin Kuball
-
依托单位:
Fabrication of first 337 nm laser diodes for biological applications
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批准号:EP/F033826/1
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项目类别:Research Grant
-
资助金额:$2.11万
-
财政年份:2008
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负责人:Martin Kuball
-
依托单位:
NSF: An investigation into the properties of B12As2, B4C and their heterostructures
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批准号:EP/D075033/1
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项目类别:Research Grant
-
资助金额:$53.34万
-
财政年份:2007
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负责人:Martin Kuball
-
依托单位:
Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
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批准号:EP/D045304/1
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项目类别:Research Grant
-
资助金额:$53.25万
-
财政年份:2006
-
负责人:Martin Kuball
-
依托单位:
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