Transforming Net Zero with Ultrawide Bandgap Semiconductor Device Technology (REWIRE)
利用超宽带隙半导体器件技术 (REWIRE) 改造净零
基本信息
- 批准号:EP/Z531091/1
- 负责人:
- 金额:$ 1497.04万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2024
- 资助国家:英国
- 起止时间:2024 至 无数据
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
Co-created and delivered with industry, REWIRE will accelerate the UK's ambition for net zero by transforming the next generation of high voltage electronic devices using wide/ultra-wide bandgap (WBG/UWBG) compound semiconductors. Our application-driven, collaborative research programme and training will advance the next generation of semiconductor power device technologies to commercialisation and enhance the security of the UK's semiconductor supply-chain.Power devices are at the centre of all power electronic systems. WBG/UWBG compound semiconductor devices pave the way for more efficient and compact power electronic systems, reducing energy loss at the power systems level. The UK National Semiconductor Strategy recognises advances in these technologies and the technical skills required for their development and manufacture as essential to supporting the growing net zero economy.REWIRE's philosophy is centred on cycles of use cases co-created with industry and stakeholders, meeting market needs for devices with increased voltage ranges, maturity and reliability. We will develop multiple technologies in parallel from a range of initial TRL to commercialisation.Initial work will focus on three use cases co-developed with industry, for transformative next generation WBG/UWBG semiconductor power electronic devices: (1) Wind energy, HVDC networks (>10 kV) - increased range high voltage devices as the basis for enabling more efficient power conversion and more compact power converters; (2) High temperature applications, device and packaging - greatly expanded application ranges for power electronics; (3) Tools for design, yield and reliability - improving the efficiency of semiconductor device manufacture.These use cases will: improve higher TRL Silicon Carbide (SiC) 1-2kV technology towards higher voltages; advance low TRL devices such as Gallium Oxide (Ga2O3) and Aluminium Gallium Nitride (AlGaN), diamond and cubic Boron Nitride (c-BN) towards demonstration and ultimately commercialisation; and develop novel heterogenous integration techniques, either within a semiconductor chip or within a package, for enhanced functionality. Use cases will have an academic and industry lead, fostering academia-industry co-development across different work packages.These initial, transformative REWIRE technologies will have wide-ranging applications. They will enhance the efficient conversion of electricity to and from High Voltage Direct Current (HVDC) for long-distance transfer, enabling a sustainable national grid with benefits including more reliable and secure communication systems. New technologies will also bring competitive advantage to the UK's strategically important electric vehicle and battery sectors, through optimised efficiency in charging, performance, energy conversion and management.New use cases will be co-developed throughout REWIRE, with our >30 industrial and policy partners who span the full semiconductor device supply chain, to meet stakeholder priorities.Through engagement with suppliers, manufacturers, and policymakers, REWIRE will pioneer advances in semiconductor supply chain management, developing supply chain tools for stakeholders to improve understanding of the dynamics of international trade, potential supply disruptions, and pricing volatilities. These tools and our Supply Chain Resilience Guide will support the commercialisation of technologies from use cases, enabling users to make informed decisions to enhance resilience, sustainability, and inclusion.Equity, Diversity, and Inclusivity (EDI) are integral to REWIRE's ambitions. Through extensive collaboration across the academic and industrial partners, we will build the diverse, skilled workforce needed to accelerate innovation in academia and industry, creating resilient UK businesses and supply chains.
REWIRE与工业界共同创建和交付,将通过使用宽/超宽带隙(WBG/UWBG)化合物半导体改造下一代高压电子设备,加速英国实现净零的雄心。我们以应用为导向的合作研究计划和培训将推动下一代半导体功率器件技术的商业化,并提高英国半导体供应链的安全性。功率器件是所有电力电子系统的核心。WBG/UWBG化合物半导体器件为更高效、更紧凑的电力电子系统铺平了道路,减少了电力系统层面的能量损耗。REWIRE的理念是围绕与行业和利益相关者共同创造的用例周期,满足市场对电压范围、成熟度和可靠性更高的器件的需求。我们将并行开发多种技术,从一系列初始TRL到商业化,初期工作将集中在与行业共同开发的三个用例上,用于变革性的下一代WBG/UWBG半导体电力电子器件:(1)风能,HVDC网络(>10 kV)-作为实现更高效功率转换和更紧凑功率转换器的基础的增加范围的高压器件;(2)高温应用、器件和封装--大大扩展了电力电子的应用范围;(3)设计、成品率和可靠性工具--提高半导体器件制造效率。这些用例将:改进TRL更高的碳化硅(SiC)1-2kV技术,以实现更高的电压;推进低TRL器件,如氧化镓(Ga 2 O3)和氮化铝镓(AlGaN)、金刚石和立方氮化硼(c-BN)的示范和最终商业化;并开发在半导体芯片内或封装内的新颖异质集成技术以增强功能性。用例将具有学术和行业领先地位,促进跨不同工作包的企业-行业共同开发。这些最初的变革性REWIRE技术将具有广泛的应用。它们将提高电力与高压直流电(HVDC)之间的有效转换,以实现长距离传输,从而实现可持续的国家电网,包括更可靠和安全的通信系统。新技术还将通过优化充电、性能、能源转换和管理效率,为英国具有重要战略意义的电动汽车和电池行业带来竞争优势。REWIRE将与我们遍布整个半导体器件供应链的30多个行业和政策合作伙伴共同开发新的用例,以满足利益相关者的优先事项。通过与供应商、制造商、REWIRE将在半导体供应链管理方面率先取得进展,为利益相关者开发供应链工具,以提高对国际贸易动态、潜在供应中断和价格波动的理解。这些工具和我们的《供应链弹性指南》将支持技术的商业化,使用户能够做出明智的决策,以增强弹性、可持续性和包容性。公平、多样性和包容性(EDI)是REWIRE的目标不可或缺的一部分。通过学术界和工业界合作伙伴的广泛合作,我们将建立加速学术界和工业界创新所需的多元化,熟练的劳动力,创造弹性英国企业和供应链。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Martin Kuball其他文献
Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates
在块状 GaN 衬底上生长的 AlGaN/GaN HEMT 的非阿累尼乌斯退化
- DOI:
- 发表时间:
2012 - 期刊:
- 影响因子:4.9
- 作者:
M. Ťapajna;N. Killat;J. Moereke;T. Paskova;K. Evans;J. Leach;X. Li;U. Ozgur;H. Morkoç;K. Chabak;A. Crespo;J. Gillespie;R. Fitch;M. Kossler;D. Walker;M. Trejo;G. Via;J. Blevins;Martin Kuball - 通讯作者:
Martin Kuball
Siと接合したダイヤモンド基板上のFETの作製
在与 Si 结合的金刚石基底上制造 FET
- DOI:
- 发表时间:
2018 - 期刊:
- 影响因子:0
- 作者:
神田 進司;山條 翔二;Martin Kuball;重川 直輝;梁 剣波 - 通讯作者:
梁 剣波
Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition
使用 SiNx 沉积控制 AlGaN/GaN HEMT 中缓冲器引起的电流崩塌
- DOI:
10.1109/ted.2017.2738669 - 发表时间:
2017 - 期刊:
- 影响因子:3.1
- 作者:
W. M. Waller;M. Gajda;S. Pandey;J. Donkers;D. Calton;J. Croon;J. Sonsky;M. Uren;Martin Kuball - 通讯作者:
Martin Kuball
Elimination of Degenerate Epitaxy in the Growth of High Quality B 12 As 2 Single Crystalline Epitaxial Films
高质量B 12 As 2 单晶外延薄膜生长过程中简并外延的消除
- DOI:
10.1557/opl.2011.316 - 发表时间:
2011 - 期刊:
- 影响因子:0
- 作者:
Yu Zhang;Hui Chen;M. Dudley;Yi Zhang;J. Edgar;Y. Gong;S. Bakalova;Martin Kuball;Lihua Zhang;D. Su;Yimei Zhu - 通讯作者:
Yimei Zhu
Growth Mechanisms and Defect Structures of B12As2 Epilayers Grown on 4H-SiC Substrates
4H-SiC 衬底上生长的 B12As2 外延层的生长机制和缺陷结构
- DOI:
10.1016/j.jcrysgro.2011.12.065 - 发表时间:
2011 - 期刊:
- 影响因子:1.8
- 作者:
Yu Zhang;Hui Chen;M. Dudley;Yi Zhang;J. Edgar;Y. Gong;S. Bakalova;Martin Kuball;Lihua Zhang;D. Su;Yimei Zhu - 通讯作者:
Yimei Zhu
Martin Kuball的其他文献
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{{ truncateString('Martin Kuball', 18)}}的其他基金
Ultrawide Bandgap AlGaN Power Electronics - Transforming Solid-State Circuit Breakers (ULTRAlGaN)
超宽带隙 AlGaN 电力电子 - 改造固态断路器 (ULTRAlGaN)
- 批准号:
EP/X035360/1 - 财政年份:2024
- 资助金额:
$ 1497.04万 - 项目类别:
Research Grant
ECCS-EPSRC - Advanced III-N Devices and Circuit Architectures for mm-Wave Future-Generation Wireless Communications
ECCS-EPSRC - 用于毫米波下一代无线通信的先进 III-N 器件和电路架构
- 批准号:
EP/X012123/1 - 财政年份:2023
- 资助金额:
$ 1497.04万 - 项目类别:
Research Grant
Boron-based semiconductors - the next generation of high thermal conductivity materials
硼基半导体——下一代高导热材料
- 批准号:
EP/W034751/1 - 财政年份:2023
- 资助金额:
$ 1497.04万 - 项目类别:
Research Grant
Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics
范德华 Ga2O3 功能材料外延:革命性的电力电子学
- 批准号:
EP/X015882/1 - 财政年份:2023
- 资助金额:
$ 1497.04万 - 项目类别:
Research Grant
FINER: Future thermal Imaging with Nanometre Enhanced Resolution
FINER:具有纳米增强分辨率的未来热成像
- 批准号:
EP/V057626/1 - 财政年份:2022
- 资助金额:
$ 1497.04万 - 项目类别:
Research Grant
Materials and Devices for Next Generation Internet (MANGI)
下一代互联网材料和设备(MANGI)
- 批准号:
EP/R029393/1 - 财政年份:2018
- 资助金额:
$ 1497.04万 - 项目类别:
Research Grant
Sub-micron 3-D Electric Field Mapping in GaN Electronic Devices
GaN 电子器件中的亚微米 3D 电场测绘
- 批准号:
EP/R022739/1 - 财政年份:2018
- 资助金额:
$ 1497.04万 - 项目类别:
Research Grant
Integrated GaN-Diamond Microwave Electronics: From Materials, Transistors to MMICs
集成 GaN-金刚石微波电子器件:从材料、晶体管到 MMIC
- 批准号:
EP/P00945X/1 - 财政年份:2017
- 资助金额:
$ 1497.04万 - 项目类别:
Research Grant
Quantitative non-destructive nanoscale characterisation of advanced materials
先进材料的定量无损纳米级表征
- 批准号:
EP/P013562/1 - 财政年份:2017
- 资助金额:
$ 1497.04万 - 项目类别:
Research Grant
High Performance Buffers for RF GaN Electronics
适用于 RF GaN 电子器件的高性能缓冲器
- 批准号:
EP/N031563/1 - 财政年份:2016
- 资助金额:
$ 1497.04万 - 项目类别:
Research Grant
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