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Spectroscopy and Applications of Nitride Quantum Dots

氮化物量子点的光谱学及应用

基本信息

批准号：
EP/D015782/1
负责人：
David Mowbray
金额：
$ 17.39万
依托单位：
University of Sheffield
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2006
资助国家：
英国
起止时间：
2006 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FD015782%2F1
关键词：
Spectroscopy Applications Nitride Quantum Dots

项目摘要

InGaN is the used in the manufacture of bright blue and white light emitting diodes and lasers, in the future these devices will replace normal incandescent bulbs in many applications, saving electricity and, in the case of DVD players, increasing storage capacity. They are made by chemically depositing very thin films of InGaN on to GaN. When a current flows in the InGaN layers electrons are confined within the layer and emit light. The authors of this proposal intend to confine the electrons not only in the InGaN layer but into very small regions of that layer by means of nanometer scale clumps of material known as quantum dots. By studying the way in which these dots form, the way in which electrons are confined and the way in which they emit light they intend to improve the efficiency of emission from existing devices and thus realise the potential improvements to society listed above.

InGaN用于制造明亮的蓝色和白色发光二极管和激光器，未来这些器件将在许多应用中取代普通白炽灯泡，节省电力，并在DVD播放器的情况下增加存储容量。它们是通过在GaN上化学沉积非常薄的InGaN薄膜制成的。当电流在InGaN层中流动时，电子被限制在层内并发光。该提案的作者打算不仅将电子限制在InGaN层中，而且通过称为量子点的纳米级材料团块将电子限制在该层的非常小的区域中。通过研究这些点形成的方式，电子被限制的方式以及它们发光的方式，他们打算提高现有设备的发射效率，从而实现上述对社会的潜在改善。

项目成果

期刊论文数量（3）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures

DOI：
10.1063/1.3456392
发表时间：
2010-06
期刊：
Applied Physics Letters
影响因子：
4
作者：
S. C. Davies;D. Mowbray;F. Ranalli;Tao Wang
通讯作者：
S. C. Davies;D. Mowbray;F. Ranalli;Tao Wang

Optical and microstructural studies of InGaN/GaN quantum dot ensembles

DOI：
10.1063/1.3226645
发表时间：
2009-09
期刊：
Applied Physics Letters
影响因子：
4
作者：
S. C. Davies;D. Mowbray;F. Ranalli;P. Parbrook;Q. Wang;Tao Wang;B. Yea;B. Sherliker;M. Halsall;R. Kashtiban;U. Bangert
通讯作者：
S. C. Davies;D. Mowbray;F. Ranalli;P. Parbrook;Q. Wang;Tao Wang;B. Yea;B. Sherliker;M. Halsall;R. Kashtiban;U. Bangert

Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots