GaNTT - Gallium Nitride Trench-FET Development for Automotive Power Applications

GaNTT - 用于汽车电源应用的氮化镓沟槽式 FET 开发

• 批准号: 105399
• 金额: $ 113.17万
• 依托单位: COMPOUND SEMICONDUCTOR CENTRE LIMITED
• 依托单位国家: 英国
• 项目类别: Collaborative R&D
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=105399
• 关键词: GaNTT; Gallium; Nitride; Trench; FET

This project brings together the complementary capability of academic and industrial partners within the Compound Semiconductor (CS) supply chain to drive the development of a new Gallium Nitride (GaN) based process platform for Automotive Power Electronics in-line with the roadmap recently published by the Advanced Propulsion Centre on behalf of the Automotive Council UK "Towards 2040: A Guide to Automotive Propulsion Technologies".The semiconductor supply chain directly employs over 1200 people in the local region. This new platform technology would help accelerate the transition of the industry from mainly silicon device manufacture to higher margin, more innovative CS devices and provide the UK with a novel sovereign GaN capability. It also supports the development of new thick GaN epitaxial materials needed to manufacture the vertical GaN transistors designed by Swansea University's Electronic Systems Design Centre. The Centre is a world-leader in semiconductor device modelling and received the TechWorks University Research Group of the Year award in 2016.The CS Applications Catapult and Turbo Power Systems (TPS) will evaluate the new GaN power devices developed in an on-vehicle application. Our vision is that the developed platform technology will deliver performance improvements in line with the Power Electronics Roadmap which sets challenging cost and performance targets for future power devices that can't be met with existing silicon based technology. The 2035 power density targets of 50kW/kg for inverters and DC-DC converters are ambitious and will only be possible through the use of wide band gap (WBG) materials, such as GaN. This proposal outlines a clear route to delivering the required capability through a UK supply chain.The main areas of focus include the development of a UK source of thick GaN epi substrates required for the vertical device, which also requires damage free GaN etching to form a vertical channel and successful materials integration of the gate dielectrics and gate electrode.The project is highly innovative from a design perspective and Swansea University have filed a patent application for the device design. The epitaxy growth is also innovative in the use of multiple substrate platforms, the unique step grading layers and the in-situ doping of the p-body region.The new device will be proven in an on-vehicle application, and provide cost and performance data. An initial 200V application will be evaluated, but by parallel materials and process development, the platform will be demonstrated to be scaleable to 600V within the project timeframe.

该项目汇集了化合物半导体 (CS) 供应链内学术和工业合作伙伴的互补能力，以推动基于氮化镓 (GaN) 的新型汽车电力电子工艺平台的开发，符合先进推进中心最近代表英国汽车委员会发布的路线图“迈向 2040 年：汽车推进技术指南”。 半导体供应链在当地直接雇用员工超过1200人。这一新平台技术将有助于加速该行业从主要硅器件制造向利润率更高、更具创新性的 CS 器件的转变，并为英国提供新颖的主权 GaN 能力。它还支持开发新型厚氮化镓外延材料，以制造由斯旺西大学电子系统设计中心设计的垂直氮化镓晶体管。该中心是半导体器件建模领域的世界领先者，并于 2016 年荣获 TechWorks 大学年度研究小组奖。CS 应用弹射器和涡轮动力系统 (TPS) 将评估在车载应用中开发的新型 GaN 功率器件。我们的愿景是，开发的平台技术将根据电力电子路线图提供性能改进，该路线图为未来的功率器件设定了具有挑战性的成本和性能目标，而现有的硅基技术无法满足这些目标。逆变器和 DC-DC 转换器的 2035 年功率密度目标为 50kW/kg，这是一个雄心勃勃的目标，只有通过使用宽带隙 (WBG) 材料（例如 GaN）才能实现。该提案概述了通过英国供应链提供所需能力的明确路线。主要关注领域包括开发垂直器件所需的英国厚 GaN 外延衬底来源，这还需要无损伤的 GaN 蚀刻以形成垂直沟道以及栅极电介质和栅电极的成功材料集成。该项目从设计角度来看具有高度创新性，斯旺西大学已为该器件设计提交了专利申请。外延生长在使用多个衬底平台、独特的阶梯分级层以及p体区域的原位掺杂方面也具有创新性。新器件将在车载应用中得到验证，并提供成本和性能数据。将评估初始 200V 应用，但通过并行材料和工艺开发，该平台将被证明可在项目时间内扩展到 600V。