Support for the EPSRC National Centre for III-V Technologies at Sheffield

支持谢菲尔德 EPSRC 国家 III-V 技术中心

• 批准号: EP/D505712/1
• 负责人: Peter A. Houston
• 金额: $ 587.7万
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2006
• 资助国家: 英国
• 起止时间: 2006 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FD505712%2F1
• 关键词: Support; EPSRC; National; Centre; III

The National Centre provides a wide range of advanced semiconductor materials to UK universities in order to carry out research into devices and physics with applications in telecommunications (including the internet), light emitting diodes, lasers, mobile phones, high frequency radar and ultra high speed optoelectronics and electronics. The structures are produced in the form of a series of thin nanoscale layers, the thickness of which can be controlled to within just a few atoms. Such structures offer new physical effects related to their small dimensions which enable the invention of a wide range of devices such as lasers for optical fibre telecommunications, precise drug delivery and pollution control. Other devices made from these structures can detect a wide range of optical wavelengths for imaging systems and form efficient solar cells.

国家中心为英国大学提供各种先进的半导体材料，以开展在电信（包括互联网），发光二极管，激光，移动的电话，高频雷达和超高速光电子和电子应用的设备和物理研究。这些结构以一系列薄的纳米级层的形式产生，其厚度可以控制在几个原子之内。这种结构提供了与其小尺寸有关的新的物理效应，这使得能够发明各种各样的装置，例如用于光纤电信、精确药物输送和污染控制的激光器。由这些结构制成的其他器件可以检测成像系统的宽范围光波长，并形成高效的太阳能电池。

项目成果

Light Emitting and Laser Diodes in the Ultraviolet

• DOI: 10.1109/jstqe.2011.2126563
• 发表时间: 2011-09-01
• 期刊: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
• 影响因子: 4.9
• 作者: Parbrook, Peter James;Wang, Tao
• 通讯作者: Wang, Tao

InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm.

InP/AlGaInP 量子点半导体盘激光器，用于 716 - 755 nm 的 CW TEM00 发射。

• DOI: 10.1364/oe.17.021782
• 发表时间: 2009
• 期刊: Optics express
• 影响因子: 3.8
• 作者: Schlosser PJ