Support for the EPSRC National Centre for III-V Technologies at Sheffield
Support for the EPSRC National Centre for III-V Technologies at Sheffield
批准号:
EP/D505712/1
负责人:
Peter A. Houston
金额:
$587.7万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2006
资助国家:
英国
项目状态:
已结题
起止时间:
2006 至 --
中文摘要
点击翻译按钮获取中文摘要
英文摘要
The National Centre provides a wide range of advanced semiconductor materials to UK universities in order to carry out research into devices and physics with applications in telecommunications (including the internet), light emitting diodes, lasers, mobile phones, high frequency radar and ultra high speed optoelectronics and electronics. The structures are produced in the form of a series of thin nanoscale layers, the thickness of which can be controlled to within just a few atoms. Such structures offer new physical effects related to their small dimensions which enable the invention of a wide range of devices such as lasers for optical fibre telecommunications, precise drug delivery and pollution control. Other devices made from these structures can detect a wide range of optical wavelengths for imaging systems and form efficient solar cells.
期刊论文(6)
专著(0)
科研奖励(0)
会议论文
DOI:
10.1109/jstqe.2011.2126563
发表时间:
2011-09-01
期刊:
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
影响因子:
4.9
作者:
[Parbrook, Peter James, Wang, Tao]
通讯作者:
Wang, Tao
InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm.
InP/AlGaInP 量子点半导体盘激光器,用于 716 - 755 nm 的 CW TEM00 发射。
DOI:
10.1364/oe.17.021782
发表时间:
2009
期刊:
Optics express
影响因子:
3.8
作者:
[Schlosser PJ]
通讯作者:
Schlosser PJ
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
-
批准号:EP/N015878/1
-
项目类别:Research Grant
-
资助金额:$55.19万
-
财政年份:2016
-
负责人:Peter A. Houston
-
依托单位:
InP / AlGaInP Quantum Dot Lasers for 650-780nm Emission
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批准号:EP/E05644X/1
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项目类别:Research Grant
-
资助金额:$2.41万
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财政年份:2007
-
负责人:Peter A. Houston
-
依托单位:
海外基金