InP / AlGaInP Quantum Dot Lasers for 650-780nm Emission
InP / AlGaInP Quantum Dot Lasers for 650-780nm Emission
批准号:
EP/E05644X/1
负责人:
Peter A. Houston
金额:
$2.41万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2007
资助国家:
英国
项目状态:
已结题
起止时间:
2007 至 --
中文摘要
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英文摘要
This project is about the development of a new material with nanoscale features that has properties that go beyond those of existing materials and will enable a number of applications that require light sources with properties that are not currently available. The applications include photodynamic therapy, which is a cancer treatment in which singlet (reactive) oxygen is generated at a specific location by using high power light with a photon energy sufficient to disassociate the oxygen molecule; DVD based optical storage, that requires dual wavelength sources to ensure backwards compatibility in new systems and which is necessary to support the semiconductor wafer manufacturing base within the UK; optical sensing, one form of which requires dual wavelength sources; and fluorescence lifetime studies, that are used, for example, for monitoring biological processes. We aim to demonstrate working devices that utilise this quantum dot material for these specific applications but also to investigate and demonstrate the basic material properties and the basic material and device physics to allow an even broader range of applications in the future. We will employ new strategies to grow material with the particular properties we require, we will characterise this material with a range of advanced experimental techniques, some of which we will develop particularly for this purpose, and will report on the properties of the material and the operation of working devices with new functionality.
期刊论文(4)
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会议论文
InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm.
InP/AlGaInP 量子点半导体盘激光器,用于 716 - 755 nm 的 CW TEM00 发射。
DOI:
10.1364/oe.17.021782
发表时间:
2009
期刊:
Optics express
影响因子:
3.8
作者:
[Schlosser PJ]
通讯作者:
Schlosser PJ
Effect of temperature on threshold current density in InP/AlGaInP quantum dot laser structures
温度对 InP/AlGaInP 量子点激光器结构中阈值电流密度的影响
DOI:
10.1504/ijnbm.2009.027708
发表时间:
2009
期刊:
International Journal of Nano and Biomaterials
影响因子:
--
作者:
[Ghamdi M]
通讯作者:
Ghamdi M
Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates
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批准号:EP/N015878/1
-
项目类别:Research Grant
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资助金额:$55.19万
-
财政年份:2016
-
负责人:Peter A. Houston
-
依托单位:
Support for the EPSRC National Centre for III-V Technologies at Sheffield
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批准号:EP/D505712/1
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项目类别:Research Grant
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资助金额:$587.7万
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财政年份:2006
-
负责人:Peter A. Houston
-
依托单位:
国内基金
海外基金
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等离激元结构在提高AlGaInP发光二极管光提取效率中的应用
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批准号:91233122
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项目类别:重大研究计划
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资助金额:80.0万元
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批准年份:2012
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负责人:刘铎
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依托单位:
AlGaInP系III-V族化合物半导体量子阱混杂研究
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批准号:61106043
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项目类别:青年科学基金项目
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资助金额:26.0万元
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批准年份:2011
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负责人:林涛
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依托单位:
低强度650 nm GaInP/AlGaInP半导体激光促进中性粒细胞胞外杀菌网形成的机制研究
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批准号:60878061
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项目类别:面上项目
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资助金额:36.0万元
-
批准年份:2008
-
负责人:刘承宜
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依托单位:
AlGaInP/GaAsHBT和器件高温特性研究
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批准号:69576035
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项目类别:面上项目
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资助金额:9.5万元
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批准年份:1995
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负责人:夏冠群
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依托单位: