Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials

用于研究先进纳米结构器件和材料的超低温扫描门设施

• 批准号: LE140100170
• 负责人: Prof Alexander Hamilton
• 金额: $ 37.34万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Linkage Infrastructure, Equipment and Facilities
• 财政年份: 2014
• 资助国家: 澳大利亚
• 起止时间: 2014-01-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/LE140100170
• 关键词: Ultra; low; temperature; scanning; gate

Ultra low temperature scanning gate facility for study of advanced nanostructure devices and materials: Electronic devices and materials underpin a range of significant industries worldwide. However while there are numerous techniques for imaging the structure of a material, including X-rays, electron microscopy, atom probe tomography, and nuclear scattering, none allow us to see how the electrons and holes move inside a material or device. This project will create a new scanning gate microscope facility for imaging electrical current flow in advanced quantum devices and the new generation of topological insulators and atomically thin crystals such as graphene. The project will stimulate new studies of the next generation of electronic materials and devices, providing the underpinning knowledge for the future development of post silicon electronics.

用于研究先进纳米结构器件和材料的超低温扫描门设施：电子器件和材料支撑着全球一系列重要行业。然而，虽然有许多技术可以对材料的结构进行成像，包括X射线，电子显微镜，原子探针断层扫描和核散射，但没有一种技术可以让我们看到电子和空穴如何在材料或设备内移动。该项目将创建一个新的扫描门显微镜设施，用于成像先进量子器件和新一代拓扑绝缘体和石墨烯等原子薄晶体中的电流。该项目将刺激下一代电子材料和器件的新研究，为后硅电子学的未来发展提供基础知识。