Effects of nanostructure and defect states in solar photovoltaic materials

太阳能光伏材料中纳米结构和缺陷态的影响

• 批准号: 371462-2009
• 负责人: Pearce, Joshua
• 金额: $ 1.53万
• 依托单位: Queen's University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2010
• 资助国家: 加拿大
• 起止时间: 2010-01-01 至 2011-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=461212
• 关键词: Effects; nanostructure; defect; states; solar

The world requires inexpensive, reliable, and sustainable energy sources. Solar photovoltaic technology, which converts sunlight directly into electricity, provides a promising source. This research program aims to enhance characterization and analysis techniques to improve the performance of solar photovoltaic cells. In this research program solar cell efficiencies will be increased using a novel and systematic approach. First, this program will quantify the effects of deposition conditions on the quality, defect state density, type and distribution in thin semiconductor films of indium gallium nitride (InGaN) films and mixed phase amorphous and nanocrystalline silicon (a-Si:H and nc-Si:H). In the short-term the objectives are to i) create deposition phase diagrams for the InGaN, ii) couple the microstructure of the materials to defect state densities and types, and iii) complete characterization of all layers of a protocrystalline Si solar cell fabricated with mixed phase materials. Then this new information about the material properties will be used in the long-term to develop optimized photovoltaic devices that overcome established obstacles in the technical development of each of these material families.

世界需要廉价、可靠和可持续的能源。太阳能光伏技术将太阳光直接转化为电能，提供了一种有前途的能源。该研究计划旨在提高表征和分析技术，以提高太阳能光伏电池的性能。在这项研究计划中，太阳能电池的效率将使用一种新颖而系统的方法来提高。首先，该计划将量化沉积条件对氮化铟镓（InGaN）薄膜和混合相非晶和纳米晶硅（a-Si：H和nc-Si：H）的半导体薄膜的质量、缺陷态密度、类型和分布的影响。 在短期内，目标是i）创建InGaN的沉积相图，ii）将材料的微结构与缺陷态密度和类型相结合，以及iii）用混合相材料制造的原晶Si太阳能电池的所有层的完整表征。然后，这些关于材料特性的新信息将长期用于开发优化的光伏器件，以克服这些材料家族中每一种的技术开发中的既定障碍。