Morphologically engineered silicon nanowire devices

该提案的目的是启动一项关于一维（1-D）硅（Si）纳米线（NW）生长和表征的研究计划，目的是组装新型NW器件，用于从集成电路到光子学和柔性显示器的应用。 基于环绕栅极电极和具有弹道传输的1-D NW核心的垂直晶体管架构是未来晶体管的首选。 由于量子效应，电子输运和光子相互作用（例如直径相关的NW带隙）的形态工程的前景已经将焦点放在用于光电二极管和激光器应用的NW上。 此外，从生长基底释放的NW可以喷墨印刷、喷涂或冲压到任意基底（包括塑料、纸或乳胶）上，以形成用于未来柔性显示器的半导体膜和电极。

The objective of this proposal is to launch a research program on growth and characterization of one-dimensional (1-D) silicon (Si) nanowires (NWs) with the aim for assembly of novel NW devices for applications ranging from integrated circuits to photonics and flexible displays. Vertical transistor architectures based on wrap-around gate electrodes and 1-D NW cores with ballistic transport are the preferred choice for future transistors. The prospect of morphological engineering of electronic transport and photon interaction (e.g. diameter-dependent NW band gap) due to quantum effects has put the spotlight on NWs for photodiode, and laser applications. In addition, NWs released from a growth substrate can be inkjet-printed, sprayed or stamped onto arbitrary substrates (including plastic, paper, or latex) to form semiconductor films and electrodes for future flexible displays.