Morphologically engineered silicon nanowire devices

形态设计的硅纳米线器件

• 批准号: 341521-2007
• 负责人: Servati, Peyman
• 金额: $ 2.08万
• 依托单位: University of British Columbia
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2011
• 资助国家: 加拿大
• 起止时间: 2011-01-01 至 2012-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=482139
• 关键词: Morphologically; engineered; silicon; nanowire; devices

The objective of this proposal is to launch a research program on growth and characterization of one-dimensional (1-D) silicon (Si) nanowires (NWs) with the aim for assembly of novel NW devices for applications ranging from integrated circuits to photonics and flexible displays. Vertical transistor architectures based on wrap-around gate electrodes and 1-D NW cores with ballistic transport are the preferred choice for future transistors. The prospect of morphological engineering of electronic transport and photon interaction (e.g. diameter-dependent NW band gap) due to quantum effects has put the spotlight on NWs for photodiode, and laser applications. In addition, NWs released from a growth substrate can be inkjet-printed, sprayed or stamped onto arbitrary substrates (including plastic, paper, or latex) to form semiconductor films and electrodes for future flexible displays.

该提案的目的是启动一个关于一维（1-D）硅（Si）纳米线（NWs）的生长和表征的研究计划，旨在组装用于集成电路、光子学和柔性显示器等应用的新型NW器件。基于环绕栅电极和具有弹道输运的一维NW核的垂直晶体管架构是未来晶体管的首选。由于量子效应，电子输运和光子相互作用的形态工程（如直径相关的NW带隙）的前景使光电二极管和激光应用的NW成为人们关注的焦点。此外，从生长基板释放的新纳米粒子可以喷墨印刷、喷涂或冲压到任意基板上（包括塑料、纸或乳胶），形成半导体薄膜和电极，用于未来的柔性显示器。