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Quantifying charging effects in III-V semiconductor film growth via piezoelectric force microscopy

通过压电力显微镜量化 III-V 族半导体薄膜生长中的充电效应

基本信息

批准号：
413046-2011
负责人：
Rosei, Federico
金额：
$ 1.82万
依托单位：
Institut national de la recherche scientifique
依托单位国家：
加拿大
项目类别：
Engage Grants Program
财政年份：
2011
资助国家：
加拿大
起止时间：
2011-01-01 至 2012-12-31
项目状态：
已结题

来源：
https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=491419
关键词：
Quantifying charging effects III semiconductor

项目摘要

Innovative new technologies, including improved solar electrics and alternative fuel storage systems for automobiles, require innovative new approaches for manufacturing semiconductors. Osemi Canada custom fabricates GaN semiconductor films for novel applications in optoelectronics and high power electronics. However, the physical structure that makes GaN desirable as semiconductors also results in the accumulation of charge on their film surfaces and interfaces, due to piezoelectric effects. Osemi Canada needs to better understand how to modify its film growth processes to control this charge buildup. The goal of this project is to use piezoelectric force microscopy (PFM) to characterize the films' piezoelectric response with high spatial resolution. The piezoelectric response is in fact a quantity which is inherently linked to the surface charging. The PFM measurements will produce spatially-resolved maps of the piezoelectric response of the films with a lateral resolution of about 50 nm, allowing for the correlation of local geometry and film-growth parameters with the charging effects. By systematically assessing the impact of different film-growth methodologies on the piezoelectric response, we will be able to suggest immediate modifications that Osemi can implement in its film growth processes so as to control piezoelectric effects and subsequent surface and interface charging.

创新的新技术，包括改进的太阳能电力和汽车替代燃料存储系统，需要创新的半导体制造新方法。 Osemi Canada 定制制造 GaN 半导体薄膜，用于光电子和高功率电子领域的新颖应用。然而，由于压电效应，使 GaN 成为理想半导体的物理结构也会导致电荷在其薄膜表面和界面上积累。 Osemi Canada 需要更好地了解如何修改其薄膜生长工艺来控制电荷积累。该项目的目标是使用压电力显微镜（PFM）以高空间分辨率表征薄膜的压电响应。压电响应实际上是与表面充电固有相关的量。 PFM 测量将产生横向分辨率约为 50 nm 的薄膜压电响应的空间分辨图，从而将局部几何形状和薄膜生长参数与充电效应相关联。通过系统地评估不同薄膜生长方法对压电响应的影响，我们将能够建议 Osemi 在其薄膜生长过程中立即进行修改，以控制压电效应以及随后的表面和界面充电。