Study of non-invasive real-time on-chip di/dt events

非侵入式实时片上di/dt事件研究

• 批准号: 455421-2013
• 负责人: Yuan, Fei
• 金额: $ 1.82万
• 依托单位: Ryerson University
• 依托单位国家: 加拿大
• 项目类别: Engage Grants Program
• 财政年份: 2013
• 资助国家: 加拿大
• 起止时间: 2013-01-01 至 2014-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=541903
• 关键词: Study; non; invasive; real; time

The performance of modern microchips is critically affected by the supply voltages of the microchips. The rapid reduction of the supply voltage of modern CMOS technologies is largely fueled by the stringent requirements on the power consumption of electronic devices especially portable electronic devices. As the feature size of modern CMOS technologies continuously shrinks aggressively, the safe margin of the supply voltage of state-of-the-art electronic systems becomes increasingly tightened. The existence of inductances in electronic systems arising from long interconnects, vias, bond wires, and long inter-chip interconnects in multichip systems and transient current changes caused by the rapid switching of logic states give rise to large supply voltage fluctuations known as voltage transients or power noise. Supply voltage transients can result in a large deviation of the supply voltage from its nominal value, causing speed degradation as much as 9% in a 60 nm technology, the malfunction of circuits, reliability issues such as reduced oxide lifetime, aggravated hot carrier injection, and accelerated negative bias temperature instability, or even the permanent damage of devices. Supply voltage transients occur when one part of the circuit experiences a sudden switch-on or switch-off, which becomes increasingly wide-spread with the continuous increase in the complexity of microprocessors and the wide deployment of power management techniques that switch on/off a large portion of complex electronic systems purposely known as power-gating in order to save power. On-chip real-time measurement of supply voltage transients is critical to the operation of microprocessors and microelectronic systems. This project will explore new architectures, circuit techniques, and CMOS silicon implementation of on-chip real-time measurement of supply voltage transients with the constraint that probing sensors will not inject additional noise, nor will they affect the propagation of switching noise and the integrity of signals.

现代微芯片的性能受到微芯片的电源电压的严重影响。现代CMOS技术的电源电压的快速降低在很大程度上是由对电子设备尤其是便携式电子设备的功耗的严格要求所推动的。随着现代CMOS技术的特征尺寸不断急剧缩小，最先进的电子系统的电源电压的安全裕度变得越来越紧。电子系统中由多芯片系统中的长互连、通孔、键合线和长芯片间互连引起的电感的存在以及由逻辑状态的快速切换引起的瞬态电流变化引起大的电源电压波动，称为电压瞬态或功率噪声。电源电压瞬变可能导致电源电压与其标称值的较大偏差，导致60 nm技术中高达9%的速度下降、电路故障、可靠性问题（如氧化物寿命缩短、热载流子注入加剧、负偏置温度不稳定性加速），甚至导致器件永久损坏。电源电压瞬变发生在电路的一部分经历突然接通或关断时，随着微处理器复杂性的持续增加和电源管理技术的广泛部署，电源电压瞬变变得越来越广泛，电源管理技术接通/关断复杂电子系统的大部分，故意称为电源门控以节省功率。电源电压瞬态的片上实时测量对于微处理器和微电子系统的运行至关重要。该项目将探索新的架构，电路技术和CMOS硅实现的芯片上实时测量电源电压瞬态的约束，探测传感器不会注入额外的噪声，也不会影响开关噪声的传播和信号的完整性。