3-Dimensionally Integrated Nanophotonic Circuits on Si for Terahertz-Speed Chip-Level optical

用于太赫兹速度芯片级光学的硅上三维集成纳米光子电路

• 批准号: 430608-2012
• 负责人: Mi, Zetian
• 金额: $ 9.91万
• 依托单位: McGill University
• 依托单位国家: 加拿大
• 项目类别: Strategic Projects - Group
• 财政年份: 2014
• 资助国家: 加拿大
• 起止时间: 2014-01-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=552579
• 关键词: Dimensionally; Integrated; Nanophotonic; Circuits; Si

At the present time, more than 50-80% of the microprocessor power is consumed by the electrical interconnect, and, as such, data centers utilize nearly 2% of the global electricity. It is therefore of immense interest to replace electrical interconnects with optical counterparts for both intra- and inter-chip connections, which could provide several immediate advantages: ultrahigh bandwidth, ultralow-power consumption, reduced crosstalk, and minimization of heat-dissipation problems. In this project, the authors propose to develop, for the first time in the world, 3-dimensionally integrated nanophotonic circuits consisting of directly modulated quantum dot tube lasers, quantum dot tube photodetectors, and Si waveguides on a Si-platform, that can lead to direct chip-to-network connection at terahertz speed. The authors have recently developed self-organized quantum dot tube nanoscale lasers and further demonstrated that such nanoscale lasers can be monolithically integrated on a Si-platform without any performance degradation. In this project, ultralow power, ultrahigh-speed 1.55 µm quantum dot tube lasers, laser arrays, and photodetectors will be fabricated on Si. Such nanoscale devices will also be designed as frequency comb generators, which can generate up to 40 wavelengths with a mode spacing of ~ 1 - 3 nm. Their applications in parallel optical data link, chip-level wavelength division multiplexing, and sensors will be evaluated. Through these vigorous studies, this project intends to address some of the grand challenges for achieving ultrahigh-speed, ultralow-power photonic functionalities on a CMOS chip, thereby providing a viable approach for the emerging chip-level optical communications.

目前，超过50-80%的微处理器功率被电气互连消耗，因此，数据中心使用了全球近2%的电力。因此，在芯片内和芯片间的连接中，用光学互连取代电气互连是一个非常有趣的问题，这可以提供几个直接的优势：超高带宽，超低功耗，减少串扰，并最大限度地减少散热问题。在这个项目中，作者提议在世界上首次开发三维集成纳米光子电路，该电路由直接调制的量子点管激光器、量子点管光电探测器和硅平台上的硅波导组成，可以以太赫兹的速度实现芯片到网络的直接连接。作者最近开发了自组织量子点管纳米级激光器，并进一步证明了这种纳米级激光器可以在硅平台上单片集成而不会出现任何性能下降。在本项目中，将在Si上制作超低功率、超高速1.55 μ m量子点管激光器、激光阵列和光电探测器。这种纳米级器件也将被设计为频率梳发生器，它可以产生多达40个波长，模式间距为~ 1 - 3nm。它们在并行光数据链路、芯片级波分复用和传感器中的应用将被评估。通过这些强有力的研究，本项目旨在解决在CMOS芯片上实现超高速、超低功耗光子功能的一些重大挑战，从而为新兴的芯片级光通信提供可行的方法。