Ultrahigh efficiency green and red color InGaN nanowires for applications in high power projectors

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This project is related to the development of high power, high efficiency, and highly reliable Ga(In)N green (530 to 540 nm) and red (620 nm) light emitters that are suitable for high brightness projectors for Christie Digital Systems Canada Inc., a leading manufacturer of high power projectors. At the present time, Xenon lamps have been widely used for projector applications, which, however, suffer from high cost, very low energy conversion efficiency and very short lifetime. Albeit near-unity efficiency has been demonstrated in GaN-based blue light emitting diodes (LEDs) and lasers, such high efficiency has not been possible in green/red emitters, due to the large lattice mismatch (~ 11%) between InN and GaN. In this project, in collaboration with research engineers in Christie Digital Systems Canada Inc., we propose to develop InGaN/GaN dot-in-a-wire core-shell nanowire heterostructures that can exhibit high internal quantum efficiency (>80%) and high light extraction efficiency (>90%) in the green and red spectral range. More importantly, we aim to demonstrate such high efficiency at high power excitation conditions (~ 10 kW/cm2, or higher). The heat dissipation and thermal management will also be optimized for high power operation. The epitaxial growth and device fabrication will be conducted at McGill University, with the optical characterization, integration, and testing being performed in Christie Digital Systems Canada Inc. (Kitchener, ON). This project will bring tremendous benefits to Christie Digital Systems Canada Inc. by exploring alternative light emitting materials for its high power projector applications. Success of this project will enable Christie Digital Systems Canada Inc.'s manufacturing center in Kitchener, ON to develop new products that can reduce the energy consumption by a factor of two to five and can eliminate the use of sophisticated thermal management. This project will fund 2 postdoctoral research fellows and 4 PhD students. They will be trained on all aspects of the InGaN nanowire materials and nanophotonics, including design, growth, structural and optical characterization, in both university and industrial settings.