Ultrahigh efficiency green and red color InGaN nanowires for applications in high power projectors

适用于高功率投影仪应用的超高效率绿色和红色 InGaN 纳米线

• 批准号: 472228-2014
• 负责人: Mi, Zetian
• 金额: $ 19.82万
• 依托单位: McGill University
• 依托单位国家: 加拿大
• 项目类别: Collaborative Research and Development Grants
• 财政年份: 2015
• 资助国家: 加拿大
• 起止时间: 2015-01-01 至 2016-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=577916
• 关键词: Ultrahigh; efficiency; green; red; color

This project is related to the development of high power, high efficiency, and highly reliable Ga(In)N green (530 to 540 nm) and red (620 nm) light emitters that are suitable for high brightness projectors for Christie Digital Systems Canada Inc., a leading manufacturer of high power projectors. At the present time, Xenon lamps have been widely used for projector applications, which, however, suffer from high cost, very low energy conversion efficiency and very short lifetime. Albeit near-unity efficiency has been demonstrated in GaN-based blue light emitting diodes (LEDs) and lasers, such high efficiency has not been possible in green/red emitters, due to the large lattice mismatch (~ 11%) between InN and GaN. In this project, in collaboration with research engineers in Christie Digital Systems Canada Inc., we propose to develop InGaN/GaN dot-in-a-wire core-shell nanowire heterostructures that can exhibit high internal quantum efficiency (>80%) and high light extraction efficiency (>90%) in the green and red spectral range. More importantly, we aim to demonstrate such high efficiency at high power excitation conditions (~ 10 kW/cm2, or higher). The heat dissipation and thermal management will also be optimized for high power operation. The epitaxial growth and device fabrication will be conducted at McGill University, with the optical characterization, integration, and testing being performed in Christie Digital Systems Canada Inc. (Kitchener, ON). This project will bring tremendous benefits to Christie Digital Systems Canada Inc. by exploring alternative light emitting materials for its high power projector applications. Success of this project will enable Christie Digital Systems Canada Inc.'s manufacturing center in Kitchener, ON to develop new products that can reduce the energy consumption by a factor of two to five and can eliminate the use of sophisticated thermal management. This project will fund 2 postdoctoral research fellows and 4 PhD students. They will be trained on all aspects of the InGaN nanowire materials and nanophotonics, including design, growth, structural and optical characterization, in both university and industrial settings.

该项目与高力量，高效率和高度可靠的GA（in）N GREN的发展有关 （530至540 nm）和红色（620 nm）轻型发射器，适用于Christie的高亮度投影仪 Digital Systems Canada Inc.，高功率投影仪的领先制造商。目前，氙 灯已被广泛用于投影仪应用 能量转换效率和非常短的寿命。尽管已证明 基于GAN的蓝光发射二极管（LED）和激光器，这种高效率在 绿色/红色发射器，由于Inn和Gan之间的晶格不匹配较大（〜11％）。在这个项目中， 与Christie Digital Systems Canada Inc.的研究工程师合作，我们建议开发 Ingan/gan dot in-a-wire核心壳纳米线异质结构，可以表现出很高的内部量子 在绿色和红色光谱范围内的效率（> 80％）和高光提取效率（> 90％）。更多的 重要的是，我们旨在在高功率激发条件下证明如此高效率（〜10 kW/cm2或 更高）。散热和热管理也将优化用于高功率运行。这 外延生长和装置制造将在麦吉尔大学进行，并具有光学 在Christie Digital Systems Canada Inc.进行的表征，集成和测试（Kitchener， 在）。该项目将通过探索Christie Digital Systems Inc。带来巨大好处 其高功率投影仪应用的替代发光材料。这个项目的成功将启用 Christie Digital Systems Canada Inc.位于基奇纳的制造中心，开发了可以 将能耗减少2至5倍，并可以消除复杂的热量的使用 管理。该项目将资助2名博士后研究研究员和4名博士生。他们将受到训练 在Ingan纳米线材料和纳米素的各个方面，包括设计，生长，结构和 在大学和工业环境中，光学表征。