Equipment for Developing Low-Dimensional Semiconductor Nanostructures for Deep Ultraviolet Optoelectronics, Solid State Lighting, and Solar Fuels

氮化化合物半导体，包括GaN， InN， AlN及其合金，由于其从深紫外（~ 6.2 eV）到近红外（~ 0.65 eV）的可调谐能带隙，已成为深紫外（UV）光电子，固态照明和光伏的首选材料。小米已经在麦吉尔大学建立了分子束外延（MBE）生长基础设施，用于iii -氮化物纳米级半导体的研究和开发。通过使用MBE系统，来自加拿大7所大学的15名申请人在这一领域做出了许多开创性的贡献。他们的一些突破性研究包括世界上最高效的无磷白光发光二极管（led）的演示，整个UVA-II波段（~ 315 nm至340 nm）的第一个电注入激光器，以及纳米线阵列上的第一个一步太阳能到氢转换。然而，为了将研究活动扩展到深紫外光谱范围，并能够更有效地生长和表征iii -氮化物纳米结构，迫切需要一些关键成分。这些组件包括用于MBE系统快速加载/卸载样品的负载锁定模块，以及用于钝化iii -氮化物纳米结构表面状态和缺陷的硫溢液电池。目前在加拿大的任何大学、公司或政府实验室都没有其他的MBE生长系统适合这些项目所需的纳米级氮化半导体的开发。因此，迫切需要购置这些部件。这将大大加快他们的研究进度，将为申请人组中30多名学生/博士后提供一个充满活力的培训环境，并将有助于使加拿大在技术上重要的氮基材料，设备和系统方面处于领先地位。

Nitride compound semiconductors, including GaN, InN, AlN, and their alloys, have emerged as the materials of choice for deep ultraviolet (UV) optoelectronics, solid state lighting, and photovoltaics, due to their tunable energy bandgap from the deep UV (~ 6.2 eV) to the near-infrared (~ 0.65 eV). Mi has established the molecular beam epitaxial (MBE) growth infrastructure at McGill Univ. for the research and development of III-nitride nanoscale semiconductors. With the use of this MBE system, the 15 applicants located in 7 universities across Canada have made many seminal contributions in this field. Some of their breakthrough research includes the demonstrations of the world's most efficient phosphor-free white light emitting didoes (LEDs), the first electrically injected lasers in the entire UVA-II band (~ 315 nm to 340 nm), and the first one-step solar-to-hydrogen conversion on nanowire arrays. However, some critical components are urgently needed in order to extend the research activities into the deep UV spectral range and to enable more efficient growth and characterization of III-nitride nanostructures. These components include a load lock module for rapid sample loading/unloading for the MBE system, and a sulfur effusion cell for passivating the surface states and defects of III-nitride nanostructures. There is currently no other MBE growth system in any Canadian Universities, companies, or government labs that are suitable for the development of nanoscale nitride semiconductors required for these projects. The acquisition of these components is therefore urgently needed. It will significantly accelerate their research progress, will lead to a dynamic training environment for the well over 30 students/postdocs in the applicants' group, and will be instrumental to put Canada on the map for the technologically important nitride-based materials, devices, and systems.