Equipment for Developing Low-Dimensional Semiconductor Nanostructures for Deep Ultraviolet Optoelectronics, Solid State Lighting, and Solar Fuels

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Nitride compound semiconductors, including GaN, InN, AlN, and their alloys, have emerged as the materials of choice for deep ultraviolet (UV) optoelectronics, solid state lighting, and photovoltaics, due to their tunable energy bandgap from the deep UV (~ 6.2 eV) to the near-infrared (~ 0.65 eV). Mi has established the molecular beam epitaxial (MBE) growth infrastructure at McGill Univ. for the research and development of III-nitride nanoscale semiconductors. With the use of this MBE system, the 15 applicants located in 7 universities across Canada have made many seminal contributions in this field. Some of their breakthrough research includes the demonstrations of the world's most efficient phosphor-free white light emitting didoes (LEDs), the first electrically injected lasers in the entire UVA-II band (~ 315 nm to 340 nm), and the first one-step solar-to-hydrogen conversion on nanowire arrays. However, some critical components are urgently needed in order to extend the research activities into the deep UV spectral range and to enable more efficient growth and characterization of III-nitride nanostructures. These components include a load lock module for rapid sample loading/unloading for the MBE system, and a sulfur effusion cell for passivating the surface states and defects of III-nitride nanostructures. There is currently no other MBE growth system in any Canadian Universities, companies, or government labs that are suitable for the development of nanoscale nitride semiconductors required for these projects. The acquisition of these components is therefore urgently needed. It will significantly accelerate their research progress, will lead to a dynamic training environment for the well over 30 students/postdocs in the applicants' group, and will be instrumental to put Canada on the map for the technologically important nitride-based materials, devices, and systems.