Equipment for Developing Boron Nitride for Deep Ultraviolet Photonics, Solar Fuels, and Solid State Lighting

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The requested equipment includes a boron effusion cell and a high temperature (up to 1800 C) substrate heater, which will be installed in an existing molecular beam epitaxial (MBE) growth system at McGill Univ. These components will form an essential and integral part of the MBE system, providing the unique capacity to grow and synthesize boron nitride (BN) on a wafer scale. This unique MBE growth facility, the first of its kind in Canada, has enabled a wide range of research projects, including 12 NSERC Strategic and 2 NSERC I2I Projects. These research activities involve nearly twenty professors in eight Canadian institutions on the emerging solid state lighting, UV optoelectronics, and solar fuels. However, several components for the growth of BN are urgently needed in order to extend the research activities into the deep UV spectral range and also to enable more efficient solar fuels and solid state lighting devices and systems.