Equipment for Developing Boron Nitride for Deep Ultraviolet Photonics, Solar Fuels, and Solid State Lighting

所要求的设备包括一个渗硼池和一个高温(高达1800℃)衬底加热器，它们将安装在麦吉尔大学现有的分子束外延(MBE)生长系统中。这些组件将构成MBE系统的重要组成部分，提供在晶片规模上生长和合成氮化硼(BN)的独特能力。这一独特的MBE增长设施是加拿大第一个此类设施，已促成了一系列研究项目，包括12个NSERC Strategic和2个NSERC I2I项目。这些研究活动涉及加拿大8个机构的近20名教授，他们研究新兴的固态照明、紫外光电子学和太阳能燃料。然而，为了将研究活动扩展到深紫外光谱范围，以及实现更高效的太阳能燃料和固态照明设备和系统，迫切需要几个用于BN增长的组件。

The requested equipment includes a boron effusion cell and a high temperature (up to 1800 C) substrate heater, which will be installed in an existing molecular beam epitaxial (MBE) growth system at McGill Univ. These components will form an essential and integral part of the MBE system, providing the unique capacity to grow and synthesize boron nitride (BN) on a wafer scale. This unique MBE growth facility, the first of its kind in Canada, has enabled a wide range of research projects, including 12 NSERC Strategic and 2 NSERC I2I Projects. These research activities involve nearly twenty professors in eight Canadian institutions on the emerging solid state lighting, UV optoelectronics, and solar fuels. However, several components for the growth of BN are urgently needed in order to extend the research activities into the deep UV spectral range and also to enable more efficient solar fuels and solid state lighting devices and systems.