III-V Semiconductor Nanowire Solar Cells

III-V族半导体纳米线太阳能电池

• 批准号: DP110102003
• 负责人: Prof Hark Hoe Tan
• 金额: $ 39.06万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2011
• 资助国家: 澳大利亚
• 起止时间: 2011-01-01 至 2014-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP110102003
• 关键词: III; Semiconductor; Nanowire; Solar; Cells

III-V semiconductors, proven as excellent photovoltaic materials, combined with unique properties of nanowires will be investigated as new materials for third generation high efficiency solar cells. It will lead to fundamental understanding of photovoltaic mechanisms in nanowires and demonstration of nanowire solar cells for future applications.

III-V族半导体被证明是优秀的光伏材料，结合纳米线的独特性能，将被研究作为第三代高效太阳能电池的新材料。它将导致纳米线光伏机制的基本理解和纳米线太阳能电池的未来应用示范。