Hexagonal boron nitride for deep ultraviolet device applications

用于深紫外器件应用的六方氮化硼

• 批准号: DP160104621
• 负责人: Prof Hark Hoe Tan
• 金额: $ 30.48万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2016
• 资助国家: 澳大利亚
• 起止时间: 2016-01-01 至 2019-03-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP160104621
• 关键词: Hexagonal; boron; nitride; deep; ultraviolet

This project plans to investigate the growth of an alternative material, hexagonal boron nitride, for use in high performance deep-ultraviolet (UV) light-emitting diodes (LEDs). Deep-UV LEDs are robust and highly portable devices that replace traditional mercury/deuterium-based UV sources, and have applications in water or air sterilisation, photo-dermal therapy, covert communication and bio-chemical agent identification. However, despite major worldwide effort in the development of aluminium gallium nitride deep-UV LEDs, their efficiency is still extremely low. Understanding the fundamental growth, doping and alloying mechanisms of hexagonal boron nitride will allow us to engineer its properties and create high-efficiency devices.

该项目计划研究用于高性能深紫外（UV）发光二极管（LED）的替代材料六方氮化硼的生长。深紫外LED是一种坚固耐用且高度便携的设备，可取代传统的基于汞/氘的紫外光源，并可应用于水或空气消毒、光皮肤治疗、隐蔽通信和生化制剂识别。然而，尽管全世界都在努力开发氮化铝镓深紫外LED，但其效率仍然极低。了解六方氮化硼的基本生长、掺杂和合金化机制将使我们能够设计其特性并制造出高效器件。