Hexagonal boron nitride for deep ultraviolet device applications

点击翻译按钮获取中文摘要

This project plans to investigate the growth of an alternative material, hexagonal boron nitride, for use in high performance deep-ultraviolet (UV) light-emitting diodes (LEDs). Deep-UV LEDs are robust and highly portable devices that replace traditional mercury/deuterium-based UV sources, and have applications in water or air sterilisation, photo-dermal therapy, covert communication and bio-chemical agent identification. However, despite major worldwide effort in the development of aluminium gallium nitride deep-UV LEDs, their efficiency is still extremely low. Understanding the fundamental growth, doping and alloying mechanisms of hexagonal boron nitride will allow us to engineer its properties and create high-efficiency devices.