Computational Design of Next Generation Nanoelectronic Materials

下一代纳米电子材料的计算设计

• 批准号: 418311-2012
• 负责人: Bevan, Kirk
• 金额: $ 1.68万
• 依托单位: McGill University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2018
• 资助国家: 加拿大
• 起止时间: 2018-01-01 至 2019-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=645385
• 关键词: Computational; Design; Next; Generation; Nanoelectronic

With nanoelectronics continuing to scale from the current 22 nm technology node and enter new applications in the medical, energy, defense, and space industries, a critical need is arising for high performance and high reliability electronic devices that is not met by existing technologies. At the intense electrical current, field, and power densities required to operate at the nanoscale, both performance and reliability are fundamentally compromised by material lifetimes. The aim of this program is to enhance the performance and reliability of nanoelectronic materials through computational design, and thereby enable new nanoelectronics applications and technologies in the medical, energy, defense, and space industries. Specifically, nanoelectronic materials electrical stressing through electromigration, carrier bond breaking, and joule heating, will be explored in four key nanoelectronic materials technology thrusts: metal interconnects, insulating dielectrics, semiconductors, and phase change memory materials. Within each of these technology thrusts, respectively, the precise objectives of the research program are to: (1) design optimal copper alloying solutions to achieve extended metal interconnect lifetimes; (2) discover and neutralize the time-dependent breakdown pathways in low-k interconnect dielectrics; (3) design bias instability free semiconductor channels for complementary logic architectures; (4) tailor phase change transition stressing and drift in chalcogenide materials for solid state memory applications. These four related research directions lie at the heart of nanoelectronics technology development. This program will meet these information technology milestones by providing urgently needed computer aided design simulation tools. Moreover, the research outcomes and methods developed in this program will also widely impact upon electronic materials in many other fields, including: solar energy, solid state lighting, nanolasers, photodetectors, chemical detection, and sensors for gene sequencing.******************

随着纳米电子技术从当前的22 nm技术节点继续扩展并进入医疗、能源、国防和航天工业的新应用，对现有技术无法满足的高性能和高可靠性电子器件的迫切需求正在出现。在纳米级工作所需的强电流、场和功率密度下，性能和可靠性从根本上受到材料寿命的影响。 该计划的目的是通过计算设计提高纳米电子材料的性能和可靠性，从而使新的纳米电子应用和技术在医疗，能源，国防和航天工业。 具体来说，纳米电子材料的电应力通过电迁移，载体键断裂，焦耳加热，将探讨在四个关键的纳米电子材料技术的推力：金属互连，绝缘绝缘材料，半导体和相变存储材料。 在每一个技术方向中，研究计划的确切目标分别是：（1）设计最佳的铜合金化解决方案，以实现延长的金属互连寿命;（2）发现和消除低k互连结构中与时间相关的击穿路径;（3）设计用于互补逻辑架构的无偏置不稳定性的半导体沟道;（4）定制用于固态存储器应用的硫属化物材料中的相变转变应力和漂移。 这四个相关的研究方向是纳米电子技术发展的核心。 该计划将通过提供迫切需要的计算机辅助设计模拟工具来满足这些信息技术里程碑。 此外，该计划的研究成果和方法也将广泛影响其他许多领域的电子材料，包括：太阳能，固态照明，纳米激光器，光电探测器，化学检测和基因测序传感器。