Strategies for the scalable fabrication, characterization and processing of graphene and other technologically important 2-D films

这项提议将麦克马斯特大学新兴设备技术中心(CEDT)、加拿大电子显微镜中心(CCEM)和加拿大公司KennedyLabs联合起来，努力推动石墨烯非凡特性的商业化尝试。该团队将致力于三个相互关联的主题：(1)与CMOS兼容的制造技术；(2)2-D结构的表征；(3)用于集成设备开发的石墨烯工艺。 (1)我们将研究以离子束合成石墨烯本身或在其上进行CVD生长的衬底为中心的生长过程，以及通过大面积低温过程，特别是等离子体增强CVD过程。其目的是建立一种独特的制造工艺，可以结合到标准的半导体工艺步骤中。(2)我们将使用无聚合物转移和使用像差校正的扫描电子显微镜(STEM)成像。(3)石墨烯的应用被认为始于其在晶体管器件中的高迁移率的开发。然而，单层石墨烯在狄拉克拐点的零带隙阻碍了低“关断”电流电子器件的制造。我们将以主题(1)和(2)为基础，并演示集成设备。我们将解决场效应晶体管(GFET)和光电探测器的有源器件开发对带隙工程的要求。我们还将以集成硅光子器件开发作为技术示范的平台。 工业合作伙伴KennedyLabs将利用这项工作中开发的工艺、设备和表征协议。对加拿大的直接好处将以肯尼迪实验室增加收入(从而创造就业机会)的形式出现，而专有技术和知识产权(IP)仍将由加拿大人全资拥有。这项工作将进一步确立加拿大在先进材料开发方面的资质，特别是在石墨烯等二维结构方面。

This proposal brings together the McMaster University Centre for Emerging Device Technologies (CEDT), the Canadian Centre for Electron Microscopy (CCEM) and the Canadian company, KennedyLabs, in an effort to move forward significantly attempts to commercialize the extraordinary properties of graphene. The team will work on three connected themes: (1) CMOS compatible fabrication technologies; (2) Characterization of 2-D structures; (3) Graphene processing for integrated device development. (1) We will investigate growth processes centered on ion beam synthesis of the graphene itself, or the substrate upon which CVD growth will take place, and through large area low-temperature processes, specifically Plasma-Enhanced CVD. The aim is to establish a unique fabrication process that can be incorporated into standard semiconductor processing steps. (2) We will use polymer-free transfer and imaging using aberration-corrected scanning transmission electron microscopy (STEM). (3)The application of graphene has been assumed to begin with the exploitation of its high mobility in transistor devices. However, the zero bandgap at the Dirac inflexion point of monolayer graphene prevents fabrication of electronic devices with low "off" current. We will build on themes (1) and (2) and demonstrate integrated devices. We will address the requirement for bandgap engineering for active device development of Field Effect Transistors (gFETs) and photodetectors. We will also use integrated silicon photonic device development as a platform for technology demonstration. The processes, devices and characterization protocols developed in this work will be exploited by the industrial partner KennedyLabs. Immediate benefits to Canada will arise in the form of increased revenue (and thus job creation) for KennedyLabs, while know-how and Intellectual Property (IP) will remain wholly Canadian owned. The work will further establish Canada's credentials in the exploitation of advanced materials, and specifically in 2-D structures such as graphene.