Focused Ion Beam de-Layering and Device Modification of Electronic and Photonic Circuits**

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In this project, we seek to employ new patterning instrumentation in the form of plasma (xenon) ion Focused**Ion Beam (FIB) milling to control the size, shape and degree of packaging of semiconductor and photonic**devices. Novel plasma ion beams are new instruments that have an advantage in that they sputter and sculpt**materials locally with nano-meter resolution. The Xe source has a high milling rate, and doesn't leave an implanted residue (as compared to current Ga FIB milling). This property avoids negative consequences of Ga milling such as accidental chemical doping, consequentially impacting the optical and electronic properties of the device under study. Furthermore, the Xe plasma source allows for a high material removal rate, thus enabling rapid processing. ** We will work with our partner (TechInsights Inc.) to develop the optimal instrumentation and material parameters necessary for i) accurate and well-placed de-layering of electronic packaging in order to expose the active layers of metalization for further analysis, and ii) the automated processing of silicon photonics chips to improve fibre-chip, and chip-chip coupling through 3-D engineering of waveguide facets. Both of these applications rely on a fundamental understanding of ion-sample interactions and the use of python-based scripting and image analysis. We will test the feasibility and scaleability of this approach for high value-added and site-specific semiconductor processing.** Successful conclusion of the grant will lead to significant benefits to TechInsights (and thus to Canada) in the form of competitive advantage, personnel training, and new product and service offerings. The current work is viewed as a springboard to a significant future collaboration.**